mmic-amplifier
Abstract: VPS05178 337 BGA
Text: BGA 312 Silicon Bipolar MMIC-Amplifier 3 Cascadable 50 -gain block 11 dB typical gain at 1.0 GHz 4 9 dBm typical P -1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312
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VPS05178
EHA07312
OT-143
Oct-26-1999
mmic-amplifier
VPS05178
337 BGA
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BCR133W
Abstract: VSO05561
Text: BCR133W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR133W WCs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR133W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR133W
VSO05561
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BCR162
Abstract: No abstract text available
Text: BCR162 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR162
VPS05161
EHA07183
Nov-29-2001
BCR162
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BCR142W
Abstract: VSO05561
Text: BCR142W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR142W WZs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR142W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR142W
VSO05561
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BCR108W
Abstract: VSO05561
Text: BCR108W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=2.2k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR108W WHs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR108W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR108W
VSO05561
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BCR112W
Abstract: VSO05561
Text: BCR112W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR112W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR112W
VSO05561
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marking WPs
Abstract: BCR192T SC75
Text: BCR192T PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=22k, R 2=47k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type BCR192T Marking WPs 1=B Pin Configuration 2=E 3=C Package SC75
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BCR192T
VPS05996
EHA07183
Dec-13-2001
marking WPs
BCR192T
SC75
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BCR141T
Abstract: SC75
Text: BCR141T NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=22k, R2=22k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR141T WDs Pin Configuration 1=B 2=E Package 3=C SC75
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BCR141T
VPS05996
EHA07184
Jul-13-2001
BCR141T
SC75
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BCR583
Abstract: No abstract text available
Text: BCR583 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR583 XMs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR583
VPS05161
EHA07183
Dec-13-2001
BCR583
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BCR569
Abstract: No abstract text available
Text: BCR569 PNP Silizium Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR569
VPS05161
EHA07180
Dec-13-2001
BCR569
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BCR198W
Abstract: VSO05561 MARKING WRS
Text: BCR198W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR198W WRs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR198W
VSO05561
EHA07183
OT323
Dec-13-2001
BCR198W
VSO05561
MARKING WRS
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BCR183
Abstract: No abstract text available
Text: BCR183 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=10k, R2 =10k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR183 WMs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR183
VPS05161
EHA07183
Dec-13-2001
BCR183
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BCR146W
Abstract: VSO05561
Text: BCR146W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=47k, R 2=22k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR146W WLs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR146W
VSO05561
EHA07184
OT323
Jul-13-2001
BCR146W
VSO05561
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BCR553
Abstract: No abstract text available
Text: BCR553 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=2.2k, R2=2.2k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR553 XBs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR553
VPS05161
EHA07183
Jul-23-2001
BCR553
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Pin diode G4S
Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Text: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181
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BAR63.
BAR63-04W
BAR63-05W
BAR63-06W
VSO05561
EHA07181
EHA07179
EHA07187
Pin diode G4S
BAR63-04W
BAR63-05W
BAR63
BAR63-06W
VSO05561
diode C2
marking c2 diode
diode MARKING A1
marking G5s
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SOT143 DUAL DIODE
Abstract: S11 SCHOTTKY diode BAT15-099 VPS05178
Text: BAT15-099 Silicon Dual Schottky Diode DBS mixer applications up to 12 GHz 3 Low noise figure Low barrier type 4 2 1 4 VPS05178 1 3 2 EHA07011 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099 S5s Pin Configuration
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BAT15-099
VPS05178
EHA07011
OT143
EHD07083
Jul-31-2001
SOT143 DUAL DIODE
S11 SCHOTTKY diode
BAT15-099
VPS05178
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BAS40-04W
Abstract: BAS40-05W BAS40-06W VSO05561
Text: BAS40-04W.BAS40-06W 3 Silicon Schottky Diode General-purpose diode for high-speed switching Circuit protection 2 Voltage clamping High-level detecting and mixing BAS40-04W 1 BAS40-05W BAS40-06W 3 3 3 1 2 1 EHA07005 VSO05561 2 1 2 EHA07006 EHA07004
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BAS40-04W.
BAS40-06W
BAS40-04W
BAS40-05W
EHA07006
EHA07004
EHA07005
VSO05561
BAS40-04W
BAS40-05W
BAS40-06W
VSO05561
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BF1005SR
Abstract: BF1005 BF1005S BF1005SW
Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1005S.
EHA07215
BF1005S
OT143
BF1005SR
OT143R
BF1005SW
OT343
Feb-18-2004
BF1005SR
BF1005
BF1005S
BF1005SW
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BCR521
Abstract: No abstract text available
Text: BCR521 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=1k, R2=1k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR521 XVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR521
VPS05161
EHA07184
Jun-29-2001
BCR521
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wns marking
Abstract: BCR185W VSO05561
Text: BCR185W PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R 1=10k, R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07183 Type Marking BCR185W WNs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR185W
VSO05561
EHA07183
OT323
Jul-20-2001
wns marking
BCR185W
VSO05561
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bat18 a2
Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Text: BAT18.BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s
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BAT18.
BAT18-05
BAT18
BAT18-04
EHA07005
EHA07002
VPS05161
EHA07004
bat18 a2
top marking c2 sot23
BAT18
BAT18-05
A2 SOT23
AUS SOT23
c2 sot23
BAT18-04
top marking 3c sot23
BAT18-04 sot23
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Pin diode G4S
Abstract: marking g4s Q62702-A1261
Text: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>
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OCR Scan
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PDF
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3-04W
3-05W
3-06W
eHA0718>
3-04W
3-05W
Q62702-A1261
Q62702-A1267
Q62702-A1268
Pin diode G4S
marking g4s
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Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 42BA-7 Silicon PIN Diode • Fast switching ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B XY 42BA-7 27 Q62702-X160 Pin Configuration * ° H<3-EHA07007 Package1 Cerec-X Maximum Ratings
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OCR Scan
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PDF
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42BA-7
Q62702-X160
3--------EHA07007
0Qbb740
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Untitled
Abstract: No abstract text available
Text: SIEMENS BXY 42BA-6 Silicon PIN Diode • Fast switching • Coax package * E SD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering C ode Pin Configuration Package* B X Y 42BA-6 - Q62702-X146 Í D ki o EHA07001
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OCR Scan
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PDF
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42BA-6
Q62702-X146
EHA07001
S23SbGS
AB35LQ5
GDbb73fl
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