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    BF1005 Price and Stock

    Rochester Electronics LLC BF1005E6327HTSA1

    RF MOSFET 5V SOT143
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    DigiKey BF1005E6327HTSA1 Bulk 405,500 2,968
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    Rochester Electronics LLC BF1005SE6327HTSA1

    RF MOSFET 5V SOT143
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    DigiKey BF1005SE6327HTSA1 Bulk 166,400 4,157
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    Infineon Technologies AG BF-1005SR-E6327

    RF MOSFET 5V SOT143R
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    DigiKey BF-1005SR-E6327 Reel 15,000
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    Infineon Technologies AG BF1005E6327HTSA1

    RF MOSFET 5V SOT143
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    DigiKey BF1005E6327HTSA1 Reel
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    Avnet Americas BF1005E6327HTSA1 Bulk 4 Weeks 3,572
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    Rochester Electronics BF1005E6327HTSA1 405,500 1
    • 1 $0.1021
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    • 100 $0.096
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    Infineon Technologies AG BF1005SE6327HTSA1

    RF MOSFET 5V SOT143
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BF1005SE6327HTSA1 Reel
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    Avnet Americas BF1005SE6327HTSA1 Reel 4 Weeks 5,000
    • 1 $0.0729
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    Rochester Electronics BF1005SE6327HTSA1 166,400 1
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    • 1000 $0.062
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    Find more BF1005 price and stock on Findchips.com

    BF1005 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BF-1005 Essentra Components Catalog Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, BUMPERS/FEET BLACK 1.10"CUSH DIA Original PDF
    BF1005 Infineon Technologies Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 19.0 dB; F (typ): 1.6 dB; Original PDF
    BF1005 Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
    BF1005 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BF1005 Siemens Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Original PDF
    BF1005 Temex Standard coaxial devices 1 to 18 GHz Original PDF
    BF1005 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF1005 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BF100-50-A-C-0-0625-N-D GCT Semiconductor 50W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-52-A-C-0-0625-N-D GCT Semiconductor 52W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-54-A-C-0-0625-N-D GCT Semiconductor 54W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-56-A-C-0-0625-N-D GCT Semiconductor 56W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF100-58-A-C-0-0625-N-D GCT Semiconductor 58W, 2MM PITCH SOCKET, DIL, SMT, Original PDF
    BF1005E6327 Infineon Technologies RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143 Original PDF
    BF1005E6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 8V 25MA SOT-143 Original PDF
    BF1005R Infineon Technologies Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 19.0 dB; F (typ): 1.6 dB; Original PDF
    BF1005R Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
    BF1005R Infineon Technologies Dual-MOS FET Monolithic Integrated Circuit Original PDF
    BF1005S Infineon Technologies TRANS MOSFET N-CH 8V 0.025A 4SOT143 Original PDF
    BF1005S Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF

    BF1005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF1005SR

    Abstract: BF1005 BF1005S BF1005SW
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S OT143 BF1005SR OT143R BF1005SW OT343 Feb-18-2004 BF1005SR BF1005 BF1005S BF1005SW

    BF1005

    Abstract: VPS05178
    Text: BF1005 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005 VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005 VPS05178

    BF1005S

    Abstract: VPS05178
    Text: BF1005S Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S VPS05178 EHA07215 OT143 Jun-28-2001 200MHz BF1005S VPS05178

    BF1005SR

    Abstract: marking NZs
    Text: BF1005SR Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005SR EHA07215 OT143R Oct-19-2001 200MHz BF1005SR marking NZs

    BF1005SR

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    BF1005

    Abstract: BF1005R BF1005W BFP181 BFP181R
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R

    BF1005

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    Untitled

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. BF1005 BF1005R OT143 OT143R

    sot143 marking code G2

    Abstract: G2 MARKING CODE 5 PIN
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S, sot143 marking code G2 G2 MARKING CODE 5 PIN

    BF1005

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,

    Untitled

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,

    BFP181

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. BF1005S BF1005SR OT143 OT143R BFP181

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1005S. BF1005S OT143 BF1005SR OT143R

    Untitled

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. BF1005 OT143 BF1005R OT143R BF1005W* OT343

    BF1005

    Abstract: No abstract text available
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input


    Original     		PDF BF1005. BF1005 OT143 BF1005R OT143R BF1005

    BF1005

    Abstract: BF1005R BF1005W
    Text: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005. EHA07215 BF1005 OT143 BF1005R OT143R BF1005W* OT343 Feb-18-2004 BF1005 BF1005R BF1005W

    Untitled

    Abstract: No abstract text available
    Text: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005S. EHA07215 BF1005S BF1005SR BF1005SW OT143 OT143R OT343 BF1005S,

    BF1005R

    Abstract: No abstract text available
    Text: BF1005R Dual - MOS FET Monolithic Integrated Circuit  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V  Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF1005R EHA07215 OT143R Nov-07-2001 200MHz BF1005R

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    smd diode B3

    Abstract: b3 smd diode b3 smd transistor SMD transistor b3 BF1005
    Text: ASB0130 SMD Schottky Barrier Diode Preliminary Features General Description IO = 100mA VR = 30V 0603(1608) 0.071(1.80) 0.063(1.60) - Designed for mounting on small surface. 0.039(1.00) 0.031(0.80) - Extremely thin package. - Low drop-down voltage. 0.033(0.85)


    Original     		PDF ASB0130 100mA MIL-STD-750, 30mperature 100mADC smd diode B3 b3 smd diode b3 smd transistor SMD transistor b3 BF1005

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


    Original     		PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR