EGN26A180IV
Abstract: Eudyna Devices EGN26A180
Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A180IV
EGN26A180IV
Eudyna Devices
EGN26A180
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EGN26C070I2D
Abstract: No abstract text available
Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
25deg
/-10MHz
EGN26C070I2D
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EGN26C210I2D
Abstract: 60Ghz 60GHz transistor EGN26
Text: EGN26C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ Psat ・High Efficiency: 62%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C210I2D
750mA
60GHz
EGN26C210I2D
60Ghz
60GHz transistor
EGN26
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MTTF
Abstract: 60Ghz GaN amplifier 160W JESD22-A114 EGN26C160I2D
Text: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C160I2D
Gate-Sourc05
MTTF
60Ghz
GaN amplifier 160W
JESD22-A114
EGN26C160I2D
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105w
Abstract: EGN26C105I2D 60Ghz 60GHz transistor
Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.3dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 17dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C105I2D
400mA
60GHz
105w
EGN26C105I2D
60Ghz
60GHz transistor
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EGN26C030MK
Abstract: 60Ghz JESD22-A114
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C030MK
60GHz
EGN26C030MK
60Ghz
JESD22-A114
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ Psat ・High Efficiency: 62%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C210I2D
750mA
60GHz
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PDF
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EGN26C030MK
Abstract: No abstract text available
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 45.0dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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60GHz
EGN26C030MK
-j100
EGN26C030MK
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EGN26A090IV
Abstract: EUDYNA EGN26A090
Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A090IV
EGN26A090IV
EUDYNA
EGN26A090
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GaN amplifier
Abstract: EUDYNA
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A030MK
GaN amplifier
EUDYNA
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6-10 Ghz RF Power 100w amplifier
Abstract: 2S110 GSC356-HYB2300 GRM55ER72A475K EGN26C070I2D GRM188B11H102KA01D 60Ghz GaN amplifier 100W GRM188B31H104KA92D JESD22-A114
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070I2D
/-10MHz
6-10 Ghz RF Power 100w amplifier
2S110
GSC356-HYB2300
GRM55ER72A475K
EGN26C070I2D
GRM188B11H102KA01D
60Ghz
GaN amplifier 100W
GRM188B31H104KA92D
JESD22-A114
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Untitled
Abstract: No abstract text available
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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60GHz
EGN26C020MK
-j100
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PDF
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2S110
Abstract: GRM188B11H102KA01D
Text: EGN26C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Power Gain : 18dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN26C070I2D
/-10MHz
/-10MHz
2S110
GRM188B11H102KA01D
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C070MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 16.5dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C070MK
25deg
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 43.5dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C020MK
60GHz
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C160I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain : 16dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C160I2D
25deg
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 52.5dBm typ. @ Psat ・High Efficiency: 65%(typ.) @ Psat ・Power Gain : 16dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C160I2D
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN26C210I2D
25deg
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C030MK GaN-HEMT 30W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 45.0dBm typ. @ Psat Power Gain : 18dB(typ.) @ f=2.60GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C030MK
60GHz
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PDF
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60Ghz
Abstract: JESD22-A114 egn26c020mk
Text: EGN26C020MK GaN-HEMT 20W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 43.5dBm typ. @ Psat ・Power Gain : 18dB(typ.) @ f=2.60GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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EGN26C020MK
60GHz
60Ghz
JESD22-A114
egn26c020mk
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PDF
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Untitled
Abstract: No abstract text available
Text: EGN26C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.3dBm typ. @ Psat ・High Efficiency: 68%(typ.) @ Psat ・Power Gain : 17dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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EGN26C105I2D
400mA
60GHz
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CR20EY
Abstract: CM16VE CM16VG CM16VJ CN16VC CN16VE CN16VG CN16VJ EGN24-06 EGN24-08
Text: - 66 - s 35 £ tt « vrsh V CM 16 VE CM16VG CM16VJ CN16VC C N 16VE CN16VG CN16VJ EGN24-06 EGN24-08 EGN26-08 EGP26-13A EGP26-13B CRlOCY-iO CR IO C Y — 12 CR10CY-2 CR10CY-4 C RIOCY— 6 C RIOCY— 8 C R20EY— 10 C R20EY— 12 CR20EY-14 C R20EY— 16 CR20EY-2
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OCR Scan
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CM16VE
CM16VG
CM16VJ
CN16VC
CN16VE
H-101
CR20EY
CN16VG
CN16VJ
EGN24-06
EGN24-08
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CM16VE
Abstract: CM16VG CM16VJ CN16VC CN16VE CN16VG CN16VJ EGN24-06 EGN24-08 CR20EY16
Text: - « n Vt h Vs d VST V (mA) Tc c o 1.80 1. 80 1. 80 1. 90 1. 90 25# 25# 25# 25# 25# 470 470 470 220 220 3. 0 3.0 3.0 3. 0 3.0 150.00 150.00 150.00 150.00 150.00 25 25 25 25 25 0. 0. 0. 0. 0. 1. 90 1. 90 1. 80 1. 80 1. 95 25# 25# 25 25 25 220 220 750 750
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OCR Scan
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CM16VE
CM16VG
CM16VJ
CN16VC
H-101
CM16VE
CM16VG
CM16VJ
CN16VC
CN16VE
CN16VG
CN16VJ
EGN24-06
EGN24-08
CR20EY16
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induction furnace
Abstract: high speed thyristor 2X10 EGN26 X103
Text: E G N 2 6 <4 0 0 a / * £ I O u tlin e d ra w in g s Units mm HIGH SPEED THYRISTOR Features • Short turn-off time "7 9 4 • B fi# * 7 ^J!±.h£.$ dv/dt)a,r* # i ' Large dv/dt : Applications • CVCF>f>'/<—^ • CVCF inverters High frequency induction furnace
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OCR Scan
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EGN26
g30-Q-31
EGN26-
50HzIHKÃ
tftl80*
50HzjE5Â
induction furnace
high speed thyristor
2X10
X103
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