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    EE000 Search Results

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    RTK0EE0003D01002BJ Renesas Electronics Corporation CPX3 Evaluation Kit for AC and DC over 48V (J70D1 with RX631) Visit Renesas Electronics Corporation
    RTK0EE0007D01001BJ Renesas Electronics Corporation CPX3 Evaluation Kit for DC under 48V (J80D1 with RX651+Audio circuit) Visit Renesas Electronics Corporation
    RTK0EE0009D01001BJ Renesas Electronics Corporation CPX4 DC-PLC Evaluation Kit M01D1 Visit Renesas Electronics Corporation
    RTK0EE0007D02001BJ Renesas Electronics Corporation CPX3 Evaluation Kit for DC under 48V (J80D2 with RL78/G13) Visit Renesas Electronics Corporation
    RTK0EE0009D02001BJ Renesas Electronics Corporation CPX4 AC-PLC Evaluation Kit M02D2 Visit Renesas Electronics Corporation
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    EE000 Price and Stock

    Amphenol LTW Technology MSAS-05PFFT-EE0001

    CONN FMALE INSERT 5P GOLD SOLDER
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    DigiKey MSAS-05PFFT-EE0001 Digi-Reel 1,718 1
    • 1 $5.43
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    MSAS-05PFFT-EE0001 Cut Tape 1,718 1
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    MSAS-05PFFT-EE0001 Reel 1,600 100
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    TME MSAS-05PFFT-EE0001 50 1
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    MSAS-05PFFT-EE0001 5 1
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    Powell Electronics MSAS-05PFFT-EE0001 9 1
    • 1 $16.45
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    Master Electronics MSAS-05PFFT-EE0001 100
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    Amphenol LTW Technology M8AS-06PFFT-EE0001

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    DigiKey M8AS-06PFFT-EE0001 Digi-Reel 732 1
    • 1 $6.58
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    M8AS-06PFFT-EE0001 Cut Tape 732 1
    • 1 $6.58
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    M8AS-06PFFT-EE0001 Reel 600 100
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    Master Electronics M8AS-06PFFT-EE0001 100
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    Amphenol LTW Technology MSBS-05PMMT-EE0001

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    DigiKey MSBS-05PMMT-EE0001 Digi-Reel 181 1
    • 1 $5.6
    • 10 $5.086
    • 100 $4.7046
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    MSBS-05PMMT-EE0001 Cut Tape 181 1
    • 1 $5.6
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    MSBS-05PMMT-EE0001 Reel 100 100
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    Newark MSBS-05PMMT-EE0001 Bulk 23 1
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    RS MSBS-05PMMT-EE0001 Bulk 100 1
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    TME MSBS-05PMMT-EE0001 85 1
    • 1 $6.26
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    Amphenol LTW Technology MSAS-04PFFT-EE0001

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    DigiKey MSAS-04PFFT-EE0001 Digi-Reel 89 1
    • 1 $5.13
    • 10 $4.654
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    MSAS-04PFFT-EE0001 Cut Tape 89 1
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    RS MSAS-04PFFT-EE0001 Bulk 100 1
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    TME MSAS-04PFFT-EE0001 64 1
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    Interstate Connecting Components MSAS-04PFFT-EE0001
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    Amphenol LTW Technology M8S-03PMMT-EE0001

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    DigiKey M8S-03PMMT-EE0001 Cut Tape 74 1
    • 1 $6.82
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    M8S-03PMMT-EE0001 Digi-Reel 74 1
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    RS M8S-03PMMT-EE0001 Bulk 100 1
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    TME M8S-03PMMT-EE0001 95 1
    • 1 $5.5
    • 10 $4
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    EE000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Socket S1g1

    Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
    Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,


    Original     		PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    M50FLW080

    Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
    Text: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)


    Original     		PDF M50FLW080A M50FLW080B 64KByte 33MHz M50FLW080A) M50FLW080B) M50FLW080 M50FLW080A M50FLW080B PLCC32 TSOP32

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original     		PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    nec f0123h

    Abstract: F004C f0103h nec f0114h nec 44 pin LQFP f0114h CSI00 F0144H FFF99H NEC. F0114H PD78F1178
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT 78K0R/KH3 16-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The 78K0R/KH3 is a 16-bit single-chip microcontroller that incorporates a 78K0R core. This is an All Flash microcontroller, which has a single power supply flash memory with a self programming


    Original     		PDF 78K0R/KH3 16-BIT 78K0R/KH3 78K0R PD78F1178Note PD78F1177Note PD78F1176 PD78F1174 PD78F1175Note nec f0123h F004C f0103h nec f0114h nec 44 pin LQFP f0114h CSI00 F0144H FFF99H NEC. F0114H PD78F1178

    EN25Q128

    Abstract: cFeon* SPI Flash EN25 C20F Dual Output fast
    Text: EN25Q128 EN25Q128 128 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation


    Original     		PDF EN25Q128 M-bit/16 K-byte/65 104MHz 80MHz 24-ball EN25Q128 cFeon* SPI Flash EN25 C20F Dual Output fast

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


    Original     		PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV2562M 120R C8800

    SO44-2

    Abstract: No abstract text available
    Text: PRELIMINARY Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,


    Original     		PDF Am29DL800B 8-Bit/512 16-Bit) SO44-2

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV256M l256mh113 L256ML123R

    STK 795 820

    Abstract: stk 795 821 stk 795 813 stk 795 518 7ROM LT 9249 RX78K0R stk 496 430 278K0R 0FFE20
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 78K0R U19382JJ1V0UM00 U19382JJ1V0UM U19382JJ1V0UM00 U1938t STK 795 820 stk 795 821 stk 795 813 stk 795 518 7ROM LT 9249 RX78K0R stk 496 430 278K0R 0FFE20

    29DL800b

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS X M 10 / 12/ BM29DL8 1Q/-12 FEATURES Single 3.0 V read, program, and erase Minimizes system level power requirements Simultaneous operations Read-while-Erase or Read-while-Program Compatible with JED EC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF BM29DL8 1Q/-12 48-pin 44-pin F9802 29DL800b