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    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET E32684A NOT RECOM MENDED FOR NEW DESIGN NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V , I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11.5 dB Typical at 12 GHz


    OCR Scan     		PDF NE32684A NE32684A b427S25 NE32684AS NE32684A-T1 NE32684A-SL. b427SES 00LS4L2

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET E32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im


    OCR Scan     		PDF NE32684A E32684A IS12I IS12S21I NE32684A NE32484AS NE32484A-T1 NE32684A-SL.