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    DRAM ELPIDA Search Results

    DRAM ELPIDA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    DRAM ELPIDA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    xdr rambus

    Abstract: xdr elpida
    Text: XDR DRAM 8x16Mx4 Advance Information Overview XDR DRAM CSP x4 Pinout The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 128M words by 4 bits. The use of Differential Rambus Signaling Level DRSL technology permits 4000/ 3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are


    Original     		PDF 8x16Mx4 512Mb DL-0211 xdr rambus xdr elpida

    DDR2 x32

    Abstract: ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2
    Text: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices


    Original     		PDF x32-bit 256Mb x16-bit 229mA 258mA 172mA 256Mb 512Mb E0652E90 DDR2 x32 ELPIDA DDR3 DDR3 DRAM layout ddr3 sdram chip datasheets 128mb 512MB xdr elpida DRAM elpida ELPIDA DDR2

    sdram pin voltage

    Abstract: DRAM elpida elpida SDRAM
    Text: Digital Consumer DRAM DRAM Solutions for All Digital Consumer Device Needs In the transition from analog to digital, advanced digital consumer devices have become part of our daily lives, and we are now exchanging information in many ways. To help this transition, Elpida Memory offers a diverse lineup of DRAM architectures for digital consumer devices


    Original     		PDF 210mA 140mA 256Mb 512Mb E0652E40 sdram pin voltage DRAM elpida elpida SDRAM

    ELPIDA

    Abstract: EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E0226E80 Ver.8.0 Date Published June 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2001-2002 DRAM Selection Guide CONTENTS 1. SDRAM . 4


    Original     		PDF E0226E80 M01E0107 ELPIDA EDS5104ABTA EDS5108ABTA PC800 ELPIDA DRAM selection guide 1gb 144pin pc133 so dimm 200pin SO DIMM sdram elpida EDS5116ABTA

    EDE2116ACBG

    Abstract: EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1454E90 Ver.9.0 Date Published September 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2009 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1454E90 240-pin M01E0706 EDE2116ACBG EDE2116ACBG-1J-F EDE1116AGBG-1J-F DDR3-800D ELPIDA lpddr DDR3-800E EDE1116AGBG EDJ1108DBSE DDR3 layout EDE1032AGBG

    EDE2116ACBG

    Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F

    pc2-5300

    Abstract: elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E0853E70 Ver.7.0 Date Published July 2006 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2006 DRAM Selection Guide CONTENTS 1. DDR2


    Original     		PDF E0853E70 240-pin 200-pin M01E0107 pc2-5300 elpida 1gb pc2 ECL120ACECN ELPIDA DDR2 PC2-3200 ELPIDA 68-FBGA Elpida DDR2 SDRAM component EDE1104ABSE EDE1108AASE

    XDR Rambus

    Abstract: 8x4Mx16
    Text: XDR DRAM 8x4Mx16/8/4/2 Overview XDR DRAM CSP x16 Pinout The Rambus XDR™ DRAM device is a general-purpose highperformance memory device suitable for use in a broad range of applications, including computer memory, graphics, video, and any other application where high bandwidth and low


    Original     		PDF 8x4Mx16/8/4/2 512Mb DL-0476 XDR Rambus 8x4Mx16

    7474 D flip-flop circuit diagram

    Abstract: Multiplexer 74157 application circuit diagram of ddr ram 74157 74157 pin diagram RAM circuit diagram ELPIDA DDR manual E0124N FPM DRAM sdram controller
    Text: User’s Manual SYNCHRONOUS DRAM Document No. E0124N10 Ver.1.0 (Previous No. M12394EJ2V2AN00) Date Published May 2001 CP(K) Elpida Memory, Inc. 2001 Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. SUMMARY OF CONTENTS


    Original     		PDF E0124N10 M12394EJ2V2AN00) 7474 D flip-flop circuit diagram Multiplexer 74157 application circuit diagram of ddr ram 74157 74157 pin diagram RAM circuit diagram ELPIDA DDR manual E0124N FPM DRAM sdram controller

    104BA

    Abstract: No abstract text available
    Text: Preliminary K4Y5002 /04/08/16 4UC XDRTM DRAM 512Mbit XDR DRAM(C-die) 4M x 16(/8/4/2) bit x 8s Banks Version 0.3 Aug 2005 XDR is a trademark of Rambus Inc. Version 0.3 Aug 2005 Page -1 Preliminary K4Y5002(/04/08/16)4UC XDRTM DRAM Change History Version 0.1 (May 2005) - Preliminary


    Original     		PDF K4Y5002 512Mbit dev37 104BA

    XDR DRAM

    Abstract: ODF10 K4Y54044UF
    Text: K4Y5416 /08/04 4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 Page -1 K4Y5416(/08/04)4UF XDR DRAM Change History Version 0.1( July 2004) - Preliminary - First Copy - Based on the Rambus XDR DRAMTM Datasheet Version 0.81


    Original     		PDF K4Y5416 256Mbit XDR DRAM ODF10 K4Y54044UF

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KVR1333D3LS8R9SL/2GEC 2GB 1Rx8 256M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DRAM Supported: Elpida C-Die DESCRIPTION SPECIFICATIONS This document describes ValueRAM's 256M x 72-bit 2GB CL(IDD) 9 cycles DDR3L-1333 CL9 SDRAM (Synchronous DRAM), low voltage,


    Original     		PDF KVR1333D3LS8R9SL/2GEC 72-Bit PC3-10600 240-Pin 72-bit DDR3L-1333 160ns DDR3-1333

    ddr3l elpida

    Abstract: ELPIDA DDR3L
    Text: Memory Module Specifications KVR1333D3LS4R9S/4GEC 4GB 1Rx4 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DRAM Supported: Elpida C-Die DESCRIPTION SPECIFICATIONS This document describes ValueRAM's 512M x 72-bit 4GB CL(IDD) 9 cycles DDR3L-1333 CL9 SDRAM (Synchronous DRAM), low voltage,


    Original     		PDF KVR1333D3LS4R9S/4GEC 72-Bit PC3-10600 240-Pin 72-bit DDR3L-1333 DDR3-1333 VALUERAM0994-001 ddr3l elpida ELPIDA DDR3L

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR667D2D8P5/2GEF 2GB 256M x 72-Bit DDR2-667 CL5 Registered w/Parity 240-Pin DIMM DRAM Supported: Elpida F-Die DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR2-667 CL5 SDRAM (Synchronous DRAM) "dual rank" Registered w/Parity memory module. The


    Original     		PDF KVR667D2D8P5/2GEF 72-Bit DDR2-667 240-Pin 2048MB) DDR2-667

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR800D2S4P6/2GEF 2GB 256M x 72-Bit DDR2-800 CL6 Registered w/Parity 240-Pin DIMM DRAM Supported: Elpida F-Die DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR2-800 CL6 SDRAM (Synchronous DRAM) "single rank" Registered w/Parity memory module. The components on


    Original     		PDF KVR800D2S4P6/2GEF 72-Bit DDR2-800 240-Pin 2048MB) DDR2-800 240pin 122-bit

    DDR2-667

    Abstract: No abstract text available
    Text: Memory Module Specification KVR667D2D4P5/4GEF 4GB 512M x 72-Bit DDR2-667 CL5 Registered w/Parity 240-Pin DIMM DRAM Supported: Elpida F-Die DESCRIPTION: This document describes ValueRAM's 512M x 72-bit 4GB 4096MB DDR2-667 CL5 SDRAM (Synchronous DRAM) "dual rank" Registered w/Parity memory module. The components on


    Original     		PDF KVR667D2D4P5/4GEF 72-Bit DDR2-667 240-Pin 4096MB) DDR2-667 00bes

    PC2-6400

    Abstract: DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide
    Text: セレクションガイド DRAM セレクションガイド Document No. J1241E80 Ver.8.0 Date Published August 2008 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2008 DRAM セレクションガイド 目 次 1. DDR3


    Original     		PDF J1241E80 240-pin 204-pin x32/x16 512Mbit EDX5116ADSE 104-FBGA PC2-6400 DDR3-800D PC3-8500 DDR3-1066E DDR3-1333G pc2-5300 DDR3-800E ddr3 4gb ddp EDD1232 ELPIDA DRAM selection guide

    EDJ2116DASE

    Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
    Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3


    Original     		PDF J1610E30 240-pin EDU1032AABG 136-FBGA M01J0706 TEL033281-1563 TEL066390-8727 EDJ2116DASE EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specification KVR400D2S4R3/2GEF 2GB 256M x 72-Bit DDR2-400 CL3 Registered 240-Pin ECC DIMM DRAM Supported: Elpida F-Die DESCRIPTION: This document describes ValueRAM's 256M x 72-bit 2GB 2048MB DDR2-400 CL3 SDRAM (Synchronous DRAM) "single rank" registered ECC memory module.The components on this module include eighteen 256M x 4-bit DDR2-400 SDRAM in FBGA packages.


    Original     		PDF KVR400D2S4R3/2GEF 72-Bit DDR2-400 240-Pin 2048MB) DDR2-400

    K4Y50024UC

    Abstract: K4Y50044UC K4Y50084UC K4Y50164UC
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.1 August 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit K4Y50024UC K4Y50044UC K4Y50084UC K4Y50164UC

    K4Y50084UE-JCB3

    Abstract: K4Y50164UE K4Y50164UE-JCB3
    Text: K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE XDRTM DRAM TM 512Mbit XDR DRAM E-die Revision 1.0 Feb., 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UE K4Y50084UE K4Y50044UE K4Y50024UE 512Mbit K4Y50084UE-JCB3 K4Y50164UE K4Y50164UE-JCB3

    Untitled

    Abstract: No abstract text available
    Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC 512Mbit

    sdr sdram reference

    Abstract: sdr sdram
    Text: SDR SDRAM E0364M20 Ver.2.0 (Previous Rev.0.3e) June 2004 (K) Japan DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.


    Original     		PDF E0364M20 M2V64S50ETP-I M2V64S50ETP-I 288-word 32-bit, 100MHz 133MHz M01E0107 sdr sdram reference sdr sdram

    Untitled

    Abstract: No abstract text available
    Text: SDR SDRAM E0364M11 Ver.1.1 (Previous Rev.0.3e) February 2004 (K) Japan PRELIMINARY DATA SHEET M2V64S50ETP-I 64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range) DESCRIPTION M2V64S50ETP-I is a 4-bank x 524,288-word x 32-bit, synchronous DRAM, with LVTTL interface.


    Original     		PDF E0364M11 M2V64S50ETP-I M2V64S50ETP-I 288-word 32-bit, 100MHz 133MHz M01E0107