Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DQ10D Search Results

    DQ10D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    GVT71256T18

    Abstract: DQ974
    Text: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		PDF GVT71256T18 71256T18 access/10ns GVT71256T18 DQ974

    Untitled

    Abstract: No abstract text available
    Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		PDF V826632M24SA DDR400

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr

    Untitled

    Abstract: No abstract text available
    Text: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle


    OCR Scan     		PDF IBM13T2649NC 2Mx64

    Untitled

    Abstract: No abstract text available
    Text: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)


    OCR Scan     		PDF IBM11M2730H 2Mx72 110ns 130ns GGG24flE

    Untitled

    Abstract: No abstract text available
    Text: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs


    OCR Scan     		PDF IBM11M32735B IBM11M32735C 32Mx72

    Untitled

    Abstract: No abstract text available
    Text: I = = = = ¥ = = = ’ = IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64, 2Mx72 Extended Data Out Page Mode DIMMs applications • System Performance Benefits:


    OCR Scan     		PDF 2Mx64, 2Mx72 104ns

    Untitled

    Abstract: No abstract text available
    Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC


    OCR Scan     		PDF IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16Mx64 16Mx72 104ns 75H1640 SA14-4626-02 DD05225

    Untitled

    Abstract: No abstract text available
    Text: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro­ nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz


    OCR Scan     		PDF IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K s5649AP

    Untitled

    Abstract: No abstract text available
    Text: IBM11M1640L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: -Buffered inputs except RAS, Data -Reduced noise (32 VSsA /cc P^s)


    OCR Scan     		PDF IBM11M1640L 110ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: IBM13V25649AN IBM13V51649AN 256K /512K x 64 S G R A M SO DIMM Features • 144 Pin Graphics JEDEC Standard, 8 Byte Syn­ chronous Small Outline Dual-In-line Memory Module • Performance: Speed Grade 7R5 j Clock Frequency 133 j Clock Cycle 7.5 j Clock Access Tim e


    OCR Scan     		PDF IBM13V25649AN IBM13V51649AN /512K

    11M32735B

    Abstract: No abstract text available
    Text: IBM11 M32735B IBM11 M32735C 3 2 M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 V ss/V qq pins)


    OCR Scan     		PDF IBM11 M32735B M32735C 32Mx72 104ns SA14-4627-04 11M32735B

    M8730

    Abstract: No abstract text available
    Text: IBM11 M8730C IBM11 M8730CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) • 8Mx72 Dual Bank Fast Page Mode DIMM


    OCR Scan     		PDF IBM11 M8730C M8730CB 8Mx72 110ns 130ns M8730

    Untitled

    Abstract: No abstract text available
    Text: IBM11 M8735C IBM11 M8735CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: : -50 : -60 : -70 RAS Access Tim e 50ns 60ns


    OCR Scan     		PDF IBM11 M8735C M8735CB 8Mx72

    1X359

    Abstract: No abstract text available
    Text: IBM11M1645L 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1 Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 tRAC ; RAS Access Tim e 60ns ; 70ns tcAC ! CAS Access Tim e 20ns ! 25ns W | Access Tim e From Address


    OCR Scan     		PDF IBM11M1645L 1X359

    Untitled

    Abstract: No abstract text available
    Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM


    OCR Scan     		PDF IBM11T4645MP IBM11T8645MP 4M/8Mx64 256ms

    Untitled

    Abstract: No abstract text available
    Text: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:


    OCR Scan     		PDF M8645H 8Mx64 104ns

    Untitled

    Abstract: No abstract text available
    Text: IBM11 M2640H IBM11 M2640HB 2M x 64 DRAM MODULE Features • Optimized for byte-write non-parity applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM • Performance: ; tRAC


    OCR Scan     		PDF IBM11 M2640H M2640HB 2Mx64 SA14-4612-04

    6ao1

    Abstract: No abstract text available
    Text: IB M 1 1 M 3 2 7 3 5 B IB M 1 1 M 3 2 7 3 5 C 32M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual ln-line Memory Module • 32Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: • System Performance Benefits: - Buffered inputs (except RAS, Data)


    OCR Scan     		PDF 32Mx72 104ns IBM11M32735B IBM11M32735C 75H1972 SA14-4627-02 6ao1

    Untitled

    Abstract: No abstract text available
    Text: Discontinued 9/98 - Iasi order; 3/93 » las! ship IBM11M8735H 8M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module Optimized for ECC applications System Performance Benefits: • 8Mx72 Extended Data Out Mode DIMM -Buffered inputs (except RAS, Data)


    OCR Scan     		PDF IBM11M8735H 168-Pin 8Mx72

    SO-DIMM 144-pin

    Abstract: No abstract text available
    Text: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns


    OCR Scan     		PDF IBM11T1640L 110ns 130ns Vss/18Vcc 128ms 00D0751 IBM11T1640L 50H8015 SA14-4462-00 SO-DIMM 144-pin

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100

    KM418C256/L/SL-7

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D KM418C256/L/SL • 7 T b 4 m 2 GGlBMTb 12=5 « S U G K CMOS DRAM 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM418C256/L/SL is a C MOS high speed 262,144 b it x 18 D ynam ic Random A ccess M em ory. Its


    OCR Scan     		PDF KM418C256/L/SL KM418C256/L/SL KM418C256/L/SL-7 KM418C256/L/SL-8 KM418C256/L/SL-10 130ns 150ns 100ns 180ns KM418C256/L/SL-7