1N6097(R)
Abstract: No abstract text available
Text: 1N6097 R DACO SEMICONDUCTOR CO., LTD. 1N6098(R) SCHOTTKY DIODE MODULE TYPE S 50A Features 50Amp Rectifier 30~40 Volts High Surge Capability Types Up to 40 V VRRM Maximum Ratings DO- 5 (DO-203AB) M J Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150
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1N6097
1N6098
50Amp
DO-203AB)
1N6097(R)
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1N5832(R)
Abstract: No abstract text available
Text: 1N5832 R 1N5833(R) 1N5834(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODE MODULE TYPE S 40A Features 40Amp Rectifier 20~40 Volts High Surge Capability Types Up to 40 V VRRM DO- 5 (DO-203AB) M Maximum Ratings J Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150
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1N5832
1N5833
1N5834
40Amp
DO-203AB)
1N5832(R)
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Untitled
Abstract: No abstract text available
Text: ERA81-004 SCHOTTKY-BARRIER RECTIFIER DIODES PRV : 40 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * * MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed
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ERA81-004
DO-41
UL94V-O
MIL-STD-202,
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6a3 zener
Abstract: DB240B 1N4004 DO-214 w06 sot-23 1N4001 DO-214 1N4004 1N4007 MINIMELF DO214 SRF2020-SRF w06 sot23 1n4007 DO-214 1N5819 SOD-323
Text: JINAN JINGHENG CO., LTD. MAIN PRODUCT CONTENT 1. SCHOTTKY BARRIER RECTIFIERS Type Number Forward Current Amps Reverse Voltage Range(Volts) Case SR0620-SR06A0 0.6 20-100 DO-41 1N17-1N19 1 20-40 R-1 1N5817-1N5819 1 20-40 DO-41 1S20-1S200 1 20-200 R-1 SR120-SR1200
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SR0620-SR06A0
DO-41
1N17-1N19
1N5817-1N5819
1S20-1S200
SR120-SR1200
SM120-SM1A0
DO-213AA)
6a3 zener
DB240B
1N4004 DO-214
w06 sot-23
1N4001 DO-214
1N4004 1N4007 MINIMELF DO214
SRF2020-SRF
w06 sot23
1n4007 DO-214
1N5819 SOD-323
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Untitled
Abstract: No abstract text available
Text: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. 1.00 (25.4)
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BAX14
DO-204AH)
DO-35
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1N4450
Abstract: DO-204AH
Text: Certificate TH97/10561QM 1N4450 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min.
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TH97/10561QM
1N4450
TW00/17276EM
DO-204AH)
DO-35
1N4450
DO-204AH
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1N4152
Abstract: DO-204AH Diode 1n4152
Text: Certificate TH97/10561QM 1N4152 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max.
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TH97/10561QM
1N4152
TW00/17276EM
DO-204AH)
DO-35
1N4152
DO-204AH
Diode 1n4152
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byv10-40
Abstract: No abstract text available
Text: BYV10-40 SCHOTTKY BARRIER DIODE DO - 41 PRV : 40 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency 1.00 25.4
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BYV10-40
DO-41
UL94V-O
MIL-STD-202,
byv10-40
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1N4152
Abstract: Diode 1n4152 DO-204AH
Text: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.
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1N4152
DO-204AH)
DO-35
1N4152
Diode 1n4152
DO-204AH
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Untitled
Abstract: No abstract text available
Text: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free
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BAX14
DO-204AH)
DO-35
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Untitled
Abstract: No abstract text available
Text: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.
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1N4152
DO-204AH)
DO-35
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BAX14
Abstract: DO-204AH
Text: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free
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BAX14
DO-204AH)
DO-35
BAX14
DO-204AH
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1N4450
Abstract: DO-204AH
Text: 1N4450 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)
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1N4450
DO-204AH)
DO-35
1N4450
DO-204AH
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RB721Q-40
Abstract: No abstract text available
Text: Certificate TH97/10561QM RB721Q-40 Certificate TW00/17276EM SCHOTTKY BARRIER DIODE DO - 34 Glass PRV : 40 Volts IO : 30 mA 1.00 25.4 min. 0.063 (1.6 )max. FEATURES : * Silicon epitaxial planar * Low forward voltage * Small pitch enables insertion on PCBs.
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TH97/10561QM
RB721Q-40
TW00/17276EM
DO-34
RB721Q-40
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RB441Q-40
Abstract: No abstract text available
Text: Certificate TH97/10561QM RB441Q-40 Certificate TW00/17276EM SCHOTTKY BARRIER DIODE DO - 34 Glass PRV : 40 Volts IO : 100 mA 1.00 25.4 min. 0.063 (1.6 )max. FEATURES : * Silicon epitaxial planar * Low forward voltage * Small pitch enables insertion on PCBs.
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TH97/10561QM
RB441Q-40
TW00/17276EM
DO-34
RB441Q-40
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15MQ040HM3
Abstract: No abstract text available
Text: VS-15MQ040HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.5 A FEATURES Cathode Anode DO-214AC SMA PRODUCT SUMMARY Package DO-214AC (SMA) IF(AV) 1.5 A VR 40 V VF at IF 0.34 V IRM 20 mA at 125 °C TJ max. 150 °C Diode variation
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VS-15MQ040HM3
DO-214AC
J-STD-020,
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
15MQ040HM3
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DIAC-Triac
Abstract: diac 40 DIAC DB 32 DIAC-Triac applications Diac DB 3 DIAC 220v diac DB-3 db6 do-35 diac DB3 Do 35 diac db3 j
Text: LESHAN RADIO COMPANY, LTD. BI-DIRECTIONAL TRIGGER DIODES DO-35 DO-35 GLASS-SEALED BI-DIRECTIONAL TRIGGER DIODES Breakover Voltage See Fig 1 Symmetry ± ∆V Dynamic Breakback Voltage ∆I= IBO toIF=10mA See Fig 1 VO See Fig 2 Output Voltage I BO tr 32 40 60
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DO-35
DO-35
100Hz
DIAC-Triac
diac 40
DIAC DB 32
DIAC-Triac applications
Diac DB 3
DIAC 220v
diac DB-3
db6 do-35
diac DB3 Do 35
diac db3 j
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FAIRCHILD 1N459A
Abstract: do-35 1N4009 1N459a 1N459 1N485B 1N486B 1N625 FDH300 FDH666
Text: FAIRCHILD DIODES DIODES COMPUTER DIODES BY ASCENDING t rr (Cont’d) GLASS PACKAGE Item DEVICE NO. *rr ns Max BV V Min 1 FDH666 4.0 40 'F mA C pF Max Package No. 1.0 100 3.5 DO-35 4.0 • DO-35 4.0 DO-35 — DO-35 5.0 DO-35 Vr V vF V Max 100 25 |r nA Max
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FDH666
DO-35
1N44S0
1N4009
1N625
FDH999
FAIRCHILD 1N459A
do-35
1N459a
1N459
1N485B
1N486B
FDH300
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1N4848
Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Text: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70
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fa501J
T-01-01
1N456
DO-35
1N456A
1N457A
1N458
1N4848
1N4868
1N4828
1N484
1N4858
1N458A
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1N456
Abstract: 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A Scans-0016000
Text: Diode Data NATL SEMICOND DISCRETE HE D [ faSQliaO 0037GQ1 7 | Low Leakage Diodes Glass Package Device No. 1N456 Package No. DO-35 VRRM V Min •r nA Max 30 25 Vr V If mA C PF Max 1.0 40 10 VF v Min 25 ® Max 1N456A DO-35 30 25 25 1.0 100 1N457 DO-35 70
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fa5Q1130
0037GQ1
1N456
DO-35
1N456A
1N457
1N457A
1N458
1N458A
1N459
1N459A
Scans-0016000
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fjt1101
Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125
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1N456
DO-35
1N456A
1N457
1N457A
1N458
fjt1101
FJT1102
1N459A
FJT1100
1N458A
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FJT1
Abstract: FJT1100 1N456A FJT1102
Text: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A
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1N456
1N456A
1N457
1N457A
1N458
1N458A
1N459
1N459A
FDH300
DO-35
FJT1
FJT1100
FJT1102
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20014
Abstract: No abstract text available
Text: International Iö R Rectifier Part Number V*RM W Ji Diodes I f*V@ t C A (Q ’ F(AV) (V) SO Hz (A) 60Hz R K(D£) Pg (A) (°C/W) °C/W Demand Number Notes Outline Key Avalanche DO-2Q3AB (DO-5) 40HA40 400 40 140 1.3 480 500 1 11 9 12 17 18 40HA60 600 40 140
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40HA40
40HA60
40HA80
40HA100
40HA140
40HA160
70HA40
70HA60
70HA80
70HA100
20014
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N5401
Abstract: D0201AD N4935 DO-41 6R600 1N4140 D0-201AD DO41 1N4142 1N4007 DO-41 package
Text: INTERNATIONAL SEMICOND 4^E ]> • T00037Ô OOOOOll 471 B I S E » SCH OTTKY RECTIFIERS r Vrrm 7 O p e ra tin g a n d ^ S to ra g e Temp. R a n g e Type 1N5817 Package Volts DO-41 20 1.0 25 1N5818 1N5819 SR 120 DO-41 DO-41 DO-41 30 40 20 1.0 1.0 1.0 25 25
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1N5817
DO-41
1N5818
SR130
SR140
N5401
D0201AD
N4935
6R600
1N4140
D0-201AD
DO41
1N4142
1N4007 DO-41 package
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