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    DIODE UF5402 Search Results

    DIODE UF5402 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE UF5402 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UF5404G

    Abstract: 5406G UF5400G UF5408G 5402G
    Text: UF5400G – UF5408G WTE POWER SEMICONDUCTORS Pb 3.0A GLASS PASSIVATED ULTRAFAST DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


    Original     		PDF UF5400G UF5408G DO-201AD, MIL-STD-202, DO-201AD UF5404G 5406G UF5400G UF5408G 5402G

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    UF5408

    Abstract: UF5408 DIODE UF540x uf5404 diode diode uf5408 uf5404 uf5407 RS-296-E UF5400 UF5400-T3
    Text: UF5400 – UF5408 WTE POWER SEMICONDUCTORS Pb 3.0A ULTRAFAST DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic


    Original     		PDF UF5400 UF5408 DO-201AD, MIL-STD-202, DO-201AD UF5408 UF5408 DIODE UF540x uf5404 diode diode uf5408 uf5404 uf5407 RS-296-E UF5400 UF5400-T3

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    UF107

    Abstract: UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
    Text: - Axial Diode Series HIGH EFFICIENCY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C


    Original     		PDF HER101 DO-41 HER102 HER103 HER104 HER10 D0-41 UF107 UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207

    Untitled

    Abstract: No abstract text available
    Text: UF5400G – UF5408G WTE POWER SEMICONDUCTORS Pb 3.0A GLASS PASSIVATED ULTRAFAST DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data


    Original     		PDF UF5400G UF5408G DO-201AD, MIL-STD-202, DO-201AD

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    Untitled

    Abstract: No abstract text available
    Text: UF5400 – UF5408 WTE POWER SEMICONDUCTORS Pb 3.0A ULTRAFAST DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: DO-201AD, Molded Plastic


    Original     		PDF UF5400 UF5408 DO-201AD, MIL-STD-202, DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 www.vishay.com Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop


    Original     		PDF UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 22-B106

    uf5404

    Abstract: uf5402
    Text: UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 www.vishay.com Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Glass passivated pallet chip junction • Ultrafast reverse recovery time • Low forward voltage drop


    Original     		PDF UF5400, UF5401, UF5402, UF5403, UF5404, UF5405, UF5406, UF5407, UF5408 22-B106 uf5404 uf5402

    AN-16 topswitch

    Abstract: EE16 core transformer transformer for TNY253 TNY254 TNY254 pn flyback snubber EE16 transformer tny255 EE16 core RC VOLTAGE CLAMP snubber circuit AN-23
    Text: TM TinySwitch Flyback Design Methodology Application Note AN-23 Introduction Design Flow This document describes a simple Design Methodology for flyback power supply design using the TinySwitch family of integrated off-line switchers. The objective of this Design


    Original     		PDF AN-23 AN-16 topswitch EE16 core transformer transformer for TNY253 TNY254 TNY254 pn flyback snubber EE16 transformer tny255 EE16 core RC VOLTAGE CLAMP snubber circuit AN-23

    EE16 core transformer

    Abstract: EE16 core AN-16 topswitch EEL16 core EEL16 transformer TNY254 pn RC VOLTAGE CLAMP snubber circuit TNY254 ee13 bobbin flyback snubber
    Text: TM TinySwitch Flyback Design Methodology Application Note AN-23 Introduction Design Flow This document describes a simple Design Methodology for flyback power supply design using the TinySwitch family of integrated off-line switchers. The objective of this Design


    Original     		PDF AN-23 EE16 core transformer EE16 core AN-16 topswitch EEL16 core EEL16 transformer TNY254 pn RC VOLTAGE CLAMP snubber circuit TNY254 ee13 bobbin flyback snubber

    BY228 equivalent

    Abstract: BYD14G RU20A cross reference
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vSE-db0112-1009 BY228 equivalent BYD14G RU20A cross reference

    TOP258PN

    Abstract: equivalent for TOP258PN TOP253 TOP258YN top258 TOP261EN TOP255 LTY817C TOP254PN TOP256EN
    Text: Application Note AN-43 TOPSwitch-HX Family Design Guide Introduction up and shutdown of the power supply during line sag or line surge conditions. Power Integrations’ EcoSmart® technology enables supplies designed around the TOPSwitch-HX family to consume less than 200 mW at no load and maintain constant


    Original     		PDF AN-43 TOP258PN equivalent for TOP258PN TOP253 TOP258YN top258 TOP261EN TOP255 LTY817C TOP254PN TOP256EN

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    EI33 bobbin

    Abstract: TOP266EG Transformer ei33 smd transistor e42 Q vs frequency axial lead ferrite bobbin UTV817A EF32 TRANSFORMER LTV702FB TOP271EG power supply dvd player LG
    Text: Application Note AN-47 TOPSwitch-JX Family Design Guide Introduction The TOPSwitch-JX is a highly integrated monolithic off-line switcher IC designed for off-line power supplies. TOPSwitch-JX integrated circuits enable design of power supplies up to 244 W,


    Original     		PDF AN-47 EI33 bobbin TOP266EG Transformer ei33 smd transistor e42 Q vs frequency axial lead ferrite bobbin UTV817A EF32 TRANSFORMER LTV702FB TOP271EG power supply dvd player LG

    nec2501

    Abstract: B26 ZENER DIODE NEC2501 Optocoupler NEC2501* Opto coupler SMPS 12V, 5V power integrations AN-16 topswitch topswitch flyback SMPS 12V power integrations ST204A zener Diode B19
    Text: ® TOPSwitch Flyback Design Methodology Application Note AN-16 Designing an off-line switching power supply involves many aspects of electrical engineering: analog and digital circuits, bipolar and MOS power device characteristics, magnetics, thermal considerations, safety requirements, control loop


    Original     		PDF AN-16 nec2501 B26 ZENER DIODE NEC2501 Optocoupler NEC2501* Opto coupler SMPS 12V, 5V power integrations AN-16 topswitch topswitch flyback SMPS 12V power integrations ST204A zener Diode B19

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    Vitrohm RC

    Abstract: No abstract text available
    Text: Application Note AN-49 LinkSwitch-PH Family Design Guide Introduction The LinkSwitch-PH family of devices are highly integrated monolithic switching ICs optimized to provide an isolated, dimmable up 1000:1 , high power factor (PF), constant current driver for LED


    Original     		PDF AN-49 Vitrohm RC

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"