NTE5800
Abstract: NTE5804 DO27 NTE5801 NTE5802 NTE5803 NTE5805 NTE5806 NTE5808 NTE5809
Text: NTE5800 thru NTE5809 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp, DO27 Description: The NTE5800 through NTE5809 silicon rectifiers are designed for use in power supplies and other applications having need of a device with the following features:
|
Original
|
NTE5800
NTE5809
NTE5809
NTE5800
NTE5801
NTE5804
DO27
NTE5801
NTE5802
NTE5803
NTE5805
NTE5806
NTE5808
|
PDF
|
NTE579
Abstract: DO27
Text: NTE579 Silicon Axial Lead Rectifier Description: The NTE579 is a Schottky Barrier Rectifier in a DO27 type axial lead package designed for use in low–voltage, high frequency inverters, free wheeling diodes, and polarity protection diodes. Features: D Low Reverse Current
|
Original
|
NTE579
NTE579
790mV
690mV
DO27
|
PDF
|
NTE5806
Abstract: NTE5804 NTE5802 NTE5805 NTE5808 NTE5801 nte5809 do27 NTE5800 NTE5803
Text: NTE5800 thru NTE5809 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp, DO27 Description: The NTE5800 through NTE5809 silicon rectifiers are designed for use in power supplies and other applications having need of a device with the following features:
|
Original
|
NTE5800
NTE5809
NTE5809
NTE5800
NTE5801
NTE5806
NTE5804
NTE5802
NTE5805
NTE5808
NTE5801
do27
NTE5803
|
PDF
|
DO27
Abstract: No abstract text available
Text: OUTLINE AND MECHANICAL DATA DO27 June 1998 0040110B
|
Original
|
0040110B
DO27
|
PDF
|
0040110B
Abstract: 28 047 do27
Text: DIMENSIONS REF. Millimeters OUTLINE AND MECHANICAL DATA Inches Min. Typ. Max. Min. Typ. Max. A 9.45 9.50 9.80 0.372 0.374 0.386 B 4.90 5.00 5.10 0.193 0.197 0.201 C 26 31 1.024 D 1.12 1.28 0.044 1.20 1.220 0.047 0.050 DO27 C O /D June 1998 A C O / B O /D
|
Original
|
0040110B
0040110B
28 047
do27
|
PDF
|
MS8104166
Abstract: MSM518222A PEDS8104166-01
Text: PEDS8104166-01 1Semiconductor MS8104166 This version: Dec. 2001 Preliminary Dual FIFO 262,214 Words x 8 Bits × 2 GENERAL DESCRIPTION The MS8104166 is a single-chip 4Mb FIFO functionally composed of two Oki’s 2Mb FIFO (First-In First-Out) memories which were designed for 256k × 8-bit high-speed asynchronous read/write operation.
|
Original
|
PEDS8104166-01
MS8104166
MS8104166
MSM518222A)
MSM518222A
PEDS8104166-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SF31G ~ SF35G Voltage 50V ~ 600V 3.0 Amp Glass Passivated Super Fast Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DO-27 FEATURES Low forward voltage drop High current capability
|
Original
|
SF31G
SF35G
DO-27
MIL-STD-202,
13-Aug-2013
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HER301 THRU HER308 VOLTAGE 50V ~ 1000V 3.0AMP High Efficiency Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen-free DO-27 FEATURES .220 5.6 .197(5.0) DIA. * Low forward voltage drop * High current capability * High reliability
|
Original
|
HER301
HER308
DO-27
MIL-STD-202,
|
PDF
|
SR5150K
Abstract: No abstract text available
Text: SR5150K Voltage 150 V 5.0 Amp Schottky Barrier Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DO-27 Low forward voltage drop High current capability High reliability High surge current capability
|
Original
|
SR5150K
DO-27
MIL-STD-202,
300uS
26-May-2011
SR5150K
|
PDF
|
HER305
Abstract: UF300 HER301 HER302 HER303 HER304 HER306 HER307
Text: HER30X / UF300X SERIES HIGH EFFICIENCY ULTRA FAST RECTIFIERS REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes DO- 27 FEATURES ● Low cost ● Diffused junction .052(1.3) .048(1.2) ● Ultra fast switching for high efficiency ● Low reverse leakage current
|
Original
|
HER30X
UF300X
DO-27
04ounces
HER301
HER305
UF3001
UF3005)
HER306
HER308
HER305
UF300
HER302
HER303
HER304
HER307
|
PDF
|
SF35G
Abstract: SF31G SF32G SF33G SF34G SF36G SF38G
Text: SF31G thru SF38G SUPER FAST GLASS PASSIVATED RECTIFIERS REVERSE VOLTAGE - 50 to 600 Volts FORWARD CURRENT - 3.0 Amperes DO- 27 FEATURES ● Super fast switching time for high efficiency ● Low forward voltage drop and .052 1.3 .048(1.2) DIA. high current capabiltiy
|
Original
|
SF31G
SF38G
DO-27
SF34G
SF35G
SF32G
SF33G
SF34G
SF36G
SF38G
|
PDF
|
diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
|
Original
|
|
PDF
|
UFR300
Abstract: UFR310
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SESA-301-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-27 PACKAGE R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND
|
Original
|
SESA-301-1B
DO-27
UFR300
UFR310
UFR300-304
UFR305-310
UFR306-310
UFR300-305
97bsesa3a
UFR310
|
PDF
|
HER307g
Abstract: HER301G
Text: HER301G ~ HER307G VOLTAGE 50 ~ 1000 V 3 A, Glass Passivated High Efficiency Rectifiers Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z z z DO-27 Low forward voltage drop High current capability
|
Original
|
HER301G
HER307G
DO-27
MIL-STD-202,
01-June-2008
HER307g
HER301G
|
PDF
|
|
|
3TH41
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL 3TH41 VOLTAGE RANGE: 1500 V CURRENT: 3.0 A FAST RECOVERY RECT IFIER FEATURES DO - 27 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents
|
Original
|
3TH41
DO-27
STD-202
3TH41
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N5820 thru 1N5822 REVERSE VOLTAGE FORWARD CURRENT SCHOTTKY BARRIER RECTIFIERS -20 to 40 Volts -3.0 Amperes D O -27 FEATURES • Metal-Semiconductor junction with guard ring • Expitaxial construction • Low forward voltage drop • High current capability
|
OCR Scan
|
1N5820
1N5822
DO-27
|
PDF
|
in5408g
Abstract: IN5406G in5407g IN5404G 1N5402G IN5401G IN5400G
Text: BIOTEC ELECTRONICS CORP SflE D • 2ñ4TlG? GG0014? 14T « D I X DIO TEC ELEC T R O N IC S CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: GPPD-301-A '"T "'. 0 1_ r 3 AM P SOFT GLASS-PASSIVATED SILICON DIODES
|
OCR Scan
|
GPPD-301-A
DO-27,
MIL-STD-202,
GPPD-301-B
1N5400G-5408G)
in5408g
IN5406G
in5407g
IN5404G
1N5402G
IN5401G
IN5400G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SF41 thru SF46 REVERSE VOLTAGE FORWARD CURRENT SUPER FAST RECTIFIERS FEATURES • Super fast switching • Low forward voltage -100 to 600 Volts -4.0 Amperes DO-27 time for high efficiency drop and high current capability • Low reverse leakage current • Plastic material has UL flammability
|
OCR Scan
|
DO-27
DO-27
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP 5ÛE ] • 2041107 Q D G G m S 377 H D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310)767-1052 Fax:(310)767-7958 Data Sheet No.: GPDP-301-A —¡—v^ _ \ 3 AMP GENERAL PURPOSE SILICON DIODES FEATURES:
|
OCR Scan
|
GPDP-301-A
DO-27,
60Hlz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FAGOB S7E » • OGGQbb? SSb « F Ü R S 1N4001GP. 1N4007GP FA.G0R ELECTRONICS 1 - 0 \ ' 1 3 I Arop. Glass PaasiŸâtôd Junction Rectifier Dimensions in mm. DO-41 Plastic V oltage 50 t o i . 000 V. Current 1.0 A. at 75°C. Mounting instructions
|
OCR Scan
|
1N4001GP.
1N4007GP
DO-41
4001GP
DO-201AD
DO-27A
DO-201AE
DO-201
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 57E ]> • FAGOR * 3 4 5 T 32 S D D 0 0 7G Ô ^7^ ■ F G R S FAGOR E L E C T R O N I C S DF-M SERIES "Tl/i-OS m Dimensions in mm. mm A 52-65 B 74+79 C 76+89 D 66+69 D, 6 +62 E 38+46 F 5 +52 d 25+26 H 127+203 1 046+056 • Glass Passivated Junction DF-M • In process of evaluation UL 1449
|
OCR Scan
|
DF06M
DO-201AD
DO-27A
DO-201AE
DO-201
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FAGOR 3MSR32S QDDD71S DQ1 • F G R S S7E » BYW27-50 FAGOR ELECTRONICS BYW27-1.000 'T, -o\-l3 1 Amp. Silicon! Dimensions in mm. DO-15 F-126 58 A 2 Plastic Voltage 50 to 1.000 V. Current 1.0 A. at 70 °C. • Low cost Mounting instructions 1. Min. distance from body to soldering point,
|
OCR Scan
|
3MSR32S
QDDD71S
BYW27-50
BYW27-1
DO-15
F-126
BYW27
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DI OT EC E L E C T R O N I C S CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES
|
OCR Scan
|
FSDP-102-A2
DO-41
DO-41,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 57E » FAGOR IFGRS 345T3E5 □□□□831 132 FB1001. FB1010 FBIOOIL FB1010L FAGOR ELECTRONICS 3 . Silicon Bridge Recti Dimensions in mm. S4 I Voltage 50 to 1.000 V. Current 10.0 A. =TtT ' MattlhMt«ink I I ✓ • UL recognized under component index file number E 130180
|
OCR Scan
|
345T3E5
FB1001.
FB1010
FB1010L
DO-201AE
DO-201
DO-27A
|
PDF
|
