T589N
Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Text: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]
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D428N
D448N
D660N
D748N
D758N
D798N
D1029N
D1049N
D2209N
D2228N
T589N
TO41
TO-50
TO57
disc thyristor
TO100
D1029N
D1049N
D2209N
D2659N
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Untitled
Abstract: No abstract text available
Text: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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T8714VA
2002/95/EC
2002/96/EC
T8714VA
11-Mar-11
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FVOV6870
Abstract: MIL-HDBK-263
Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm
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T8719VA
2002/95/EC
2002/96/EC
T8719VA
18-Jul-08
FVOV6870
MIL-HDBK-263
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FVOV6870
Abstract: MIL-HDBK-263 T8714VA
Text: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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PDF
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T8714VA
2002/95/EC
2002/96/EC
T8714VA
18-Jul-08
FVOV6870
MIL-HDBK-263
|
Untitled
Abstract: No abstract text available
Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: = 870 nm
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T8719VA
2002/95/EC
2002/96/EC
T8719VA
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: = 870 nm
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Original
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PDF
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T8719VA
2002/95/EC
2002/96/EC
T8719VA
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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Original
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PDF
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T8714VA
2002/95/EC
2002/96/EC
T8714VA
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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T8714VA
2002/95/EC
2002/96/EC
T8714VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8714VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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Original
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PDF
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T8714VA
2002/95/EC
2002/96/EC
T8714VA
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: = 870 nm
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PDF
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T8719VA
2002/95/EC
2002/96/EC
T8719VA
2002/95/EC.
2011/65/EU.
JS709A
02-Oct-12
|
FVOV6870
Abstract: MIL-HDBK-263
Text: T8719VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm
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Original
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PDF
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T8719VA
2002/95/EC
2002/96/EC
T8719VA
18-Jul-08
FVOV6870
MIL-HDBK-263
|
Untitled
Abstract: No abstract text available
Text: T8714VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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PDF
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T8714VA
T8714VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8714VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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Original
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PDF
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T8714VA
T8714VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm
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T8719VA
T8719VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
|
|
Untitled
Abstract: No abstract text available
Text: T8719VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.47 x 0.47 x 0.16 • Peak wavelength: λ = 870 nm
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T8719VA
T8719VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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T1081N
Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Text: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N
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kuka-2003-inhalt
T1901N
T1503N
T201N
T1081N
T1201N
T501N
T551N
T553N
T739N
T1081N
T553N
eupec igbt
EUPEC T1503N
kuka-2003-inhalt.qxd
T2351N
T2563
T1049
T1601
T1869N
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thyristor T 514
Abstract: THYRISTOR t508n T508N T879N DIODE 409 1336 T1189N T1509N T1989N T358N T588N
Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl
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T358N
T508N
T588N
T718N
T879N
T1189N
T1509N
T1989N
thyristor T 514
THYRISTOR t508n
T508N
T879N
DIODE 409 1336
T1189N
T1509N
T1989N
T358N
T588N
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T1189N
Abstract: T718N T1509N T358N T508N T588N T879N
Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VRRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro Anzahl
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T358N
T508N
T588N
T718N
T879N
T1189N
T1509N
T1189N
T718N
T1509N
T358N
T508N
T588N
T879N
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EUPEC Thyristor
Abstract: T588N16TOF tt92n16kof TT162N16KOF TZ500N16KOF TT106N16KOF TT500N16KOF eupec scr thyristor scr scr 106
Text: BACK NEXT HIGH POWER THYRISTORS AND DIODES Diode Thyristor 2 Features: 2 5 Features: 4 • Reverse Voltage up to 2800 Volts • Metal Ceramic Package • Reverse Voltage up to 4900 Volts • Metal Ceramic Package 1 Applications: • DC Motor Control for machine tools
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641-T218N16TOF
641-T358N16TOF
641-T588N16TOF
641-T879N16TOF
641-T1189N18TOF
641-D428N18TOF
641-D798N16TOF
641-TT92N16KOF
641-TT106N16KOF
641-TT162N16KOF
EUPEC Thyristor
T588N16TOF
tt92n16kof
TT162N16KOF
TZ500N16KOF
TT106N16KOF
TT500N16KOF
eupec scr
thyristor scr
scr 106
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135 D 4 e
Abstract: T718N THYRISTOR t508n T1189N T1509N T1989N T298N T358N T508N T588N
Text: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]
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T298N
T358N
T508N
T588N
T718N
T719N
T1189N
T1509N
T1989N
135 D 4 e
T718N
THYRISTOR t508n
T1189N
T1509N
T1989N
T298N
T358N
T508N
T588N
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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PMB8753
Abstract: Infineon Specific HCI Commands bluetooth T8753 PMB 9600 LMPP Z/sdc 7600
Text: P rod uc t O v erv i ew T8753-XV10PO1-7600 No ve mb er 2005 PMB 8753 BlueMoon UniCellular BlueMoon Universal Platform N e v e r s t o p t h i n k i n g . Edition 2005-11-25 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
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T8753-XV10PO1-7600
D-81541
T8753-XV10PO1-7600,
PMB8753
Infineon Specific HCI Commands bluetooth
T8753
PMB 9600
LMPP
Z/sdc 7600
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diode t87
Abstract: No abstract text available
Text: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.
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OCR Scan
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PDF
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1SS245
DO-35)
52mmte
T-80A
diode t87
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diode t87
Abstract: t85 diode DO-35 BLUE CATHODE t77 c.3 1SS245 SC-40 T-77 diode T-77 diode t85 ROHM 1SS245
Text: 40E ]> ROHM CO LTD 7 a 2 ñ clcicl OOObSIS b IRH tl -f Tf— K / D io d e s 1SS245 -F O Z -O l 1 S ilico n Epitaxial Planar H ig h-V o ltag e Sw itching Diode #-Jë\J"jÈ|3iI/Dimensions Unit : mm • W * 1 1) n l i B E T ' $ > & o 2) ¡ g i f H S T ' * « o
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1SS245
DO-35)
DO-35
SC-40
1SS245
diode t87
t85 diode
DO-35 BLUE CATHODE
t77 c.3
SC-40
T-77
diode T-77
diode t85
ROHM 1SS245
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