Untitled
Abstract: No abstract text available
Text: New Product VS-150EBU02HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode
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VS-150EBU02HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-150EBU02HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package
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Original
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PDF
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VS-150EBU02HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-EBU8006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package
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Original
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PDF
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VS-EBU8006HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-150EBU02HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package
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Original
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PDF
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VS-150EBU02HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-EBU8006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package
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Original
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PDF
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VS-EBU8006HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product VS-EBU8006HF4 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode • AEC-Q101 qualified Anode • PowerTab® package
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Original
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PDF
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VS-EBU8006HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.4V IXGH36N60A3D4 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR
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IC110
IXGH36N60A3D4
O-247
IF110
8-06B
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IXGN82N120B3H1
Abstract: IXGN82N120 IF110 IXGN82N120B3H
Text: Advance Technical Information IXGN82N120B3H1 GenX3TM 1200V IGBT w/ Diode VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN82N120B3H1
IC110
OT-227B,
E153432
IF110
82N120B3H1
IXGN82N120B3H1
IXGN82N120
IF110
IXGN82N120B3H
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information GenX3TM 1200V IGBT w/ Diode IXGN82N120B3H1 VCES IC110 VCE sat = 1200V = 64A ≤£ 3.2V High-Speed Low-Vsat PT IGBT for 3-20 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXGN82N120B3H1
IC110
OT-227B,
E153432
IF110
82N120B3H1
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g36N60a
Abstract: diode fr 307 IF110
Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR
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IXGH36N60A3D4
IC110
O-247
IF110
8-06B
g36N60a
diode fr 307
IF110
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IXGH48N60A3D1
Abstract: 48N60A3 48n60 IXGH48N60
Text: GenX3TM 600V IGBT with Diode IXGH48N60A3D1 VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGH48N60A3D1
IC110
O-247
062in.
IXGH48N60A3D1
48N60A3
48n60
IXGH48N60
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48n60a3
Abstract: No abstract text available
Text: GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V IXGH48N60A3D1 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
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Original
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PDF
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IC110
IXGH48N60A3D1
O-247
48n60a3
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Untitled
Abstract: No abstract text available
Text: IXGH48N60A3D1 GenX3TM 600V IGBT w/Diode VCES = 600V IC110 = 48A VCE sat ≤ 1.35V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
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PDF
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IXGH48N60A3D1
IC110
O-247
IC110
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RECTIFIER DIODE 1000A
Abstract: 2596
Text: Rectifier Diode SXXHN/HR300 Symbol Characteristics Conditions TJ 0C Value Unit V = VRRM 180 180 200-1500 50 V mA 300 A 471 A 5200 A 130.20 kA2S BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current CONDUCTING PARAMETERS
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SXXHN/HR300
1300C
June-2008
RECTIFIER DIODE 1000A
2596
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|
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Untitled
Abstract: No abstract text available
Text: VRSM IFAVM IFRMS IFSM VF0 rF Rectifier Diode = 5200 V = 1028 A = 1614 A = 12.8x103 A = 0.894 V = 0.487 mΩ Ω 5SDD 08D5000 Doc. No. 5SYA1165-00 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1 Parameter
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08D5000
5SYA1165-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: 5SDD 65H2400 5SDD 65H2400 Old part no. DV 889-6500-24 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 400 I FAVm = 6 520 I FSM = 59 000 V TO = 0.870
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65H2400
1768/138a,
DV/159/05a
Aug-11
Aug-11
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QF30AA60
Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V
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SQD200A40/60
E76102
SQD200A
95max
IC200A,
62max
110Tab
30max
VCEX400/600V
QF30AA60
QF20AA60
TRANSISTOR JC
SQD200A60
SQD300A40
SQD200A40
D 1380 Transistor
SQD400BA60
20S0
sqd300a60
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1028 1614 12x103 0.894 0.487 Rectifier Diode V A A A V mΩ Ω 5SDD 08D5000 Doc. No. 5SYA1165-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)
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PDF
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08D5000
5SYA1165-00
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1)
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20F5000
5SYA1162-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IFAVM IFRMS IFSM VF0 rF Rectifier Diode = 5200 V = 1978 A = 3106 A = 25.6x103 A = 0.94 V = 0.284 mΩ Ω 5SDD 20F5000 Doc. No. 5SYA1162-01 Jan. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1 Parameter
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Original
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PDF
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20F5000
5SYA1162-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1028 1614 12x103 0.894 0.487 Rectifier Diode V A A A V mΩ 5SDD 08D5000 Doc. No. 5SYA1165-00 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
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Original
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PDF
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08D5000
5SYA1165-00
CH-5600
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diode 3106
Abstract: No abstract text available
Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5200 1978 3106 24x103 0.94 0.284 Rectifier Diode V A A A V mΩ 5SDD 20F5000 Doc. No. 5SYA1162-01 Okt. 03 • Very low on-state losses • Optimum power handling capability Blocking Maximum rated values 1) Parameter
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Original
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20F5000
5SYA1162-01
CH-5600
diode 3106
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zener c53 hp
Abstract: C105 Diode zener 150v 1w RM73B3A C92 diode flyback samsung flyback transformer samsung BLM31P500SPB C81 diode R169
Text: Am186CC Customer Dev. Platform Main Board - Miscellaneous Revised: Tuesday, September 22, 1998 Revision: 2.0 (C) Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials September 22,1998
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Am186CC
HM00-98519
DS34C87TM
DS34C86TM
74ACT125
M4-128/64-15YC
SP211CT
TLC7733ID
74ACT02
7C1041-25VC
zener c53 hp
C105 Diode
zener 150v 1w
RM73B3A
C92 diode
flyback samsung
flyback transformer samsung
BLM31P500SPB
C81 diode
R169
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Untitled
Abstract: No abstract text available
Text: DIODE MODULES Ratings and Specifications Í m iímíiibíI 600 volts class general use diode modules/E series Dovicu ty p i’ V rrm V rsm lo Ifsm Ft V fm Irrm Rth j-C Package Volts Volts Amps. Amps. A2s Volts mA °C/W . 6RI30F 060 600 660 30 360 520 1.10
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OCR Scan
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PDF
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6RI30F
R604A
6Rlb0E-060
R605A
R606A
6RI100E
SRI150E-060
ERG28-12
ERG78-12
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