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    DIODE MBR350 Search Results

    DIODE MBR350 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MBR350 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR360

    Abstract: No abstract text available
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360

    B350

    Abstract: B360 MBR350 MBR350RL MBR360 MBR360RL mbr360l
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 r14525 MBR350/D B350 B360 MBR350 MBR350RL MBR360RL mbr360l

    MBR360

    Abstract: No abstract text available
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360

    MBR360

    Abstract: B350 B360 MBR350 MBR350RL MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 r14525 MBR350/D B350 B360 MBR350 MBR350RL MBR360RL

    MBR360

    Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 MBR350/D Marking B360 B350 B360 MBR350 MBR350RL MBR360RL

    MOTOROLA SEMICONDUCTOR B360

    Abstract: MOTOROLA B360 MBR360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola
    Text: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR350 MBR360 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBR350/D MBR350 MBR360 MBR360 DeviceMBR350/D MOTOROLA SEMICONDUCTOR B360 MOTOROLA B360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola

    MBR360RLG

    Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 Gram360RL MBR360RLG BRD8011/D. DO-201AD) MBR360RLG MBR350 MBR350RL MBR350RLG MBR360G MBR360RL

    Untitled

    Abstract: No abstract text available
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 MBR350/D

    MBR360RL

    Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RLG
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 MBR350/D MBR360RL MBR350 MBR350RL MBR350RLG MBR360G MBR360RLG

    Untitled

    Abstract: No abstract text available
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 MBR350/D

    MBR360G

    Abstract: MBR360RLG MBR350 MBR350RL MBR350RLG MBR360 MBR360RL
    Text: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap


    Original     		PDF MBR350, MBR360 MBR360 MBR350/D MBR360G MBR360RLG MBR350 MBR350RL MBR350RLG MBR360RL

    MOTOROLA B360

    Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
    Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 MOTOROLA B360 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    PK MUR 460

    Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    RECTIFIER DIODES Motorola

    Abstract: mbr360 MOTOROLA B360 MBR330 motorola b330
    Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan     		PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR360 RECTIFIER DIODES Motorola MOTOROLA B360 motorola b330

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan     		PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 b3b72Â MBR320

    MBR360

    Abstract: Diode MBR350
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF MBR320 MBR340 MBR330 MBR350 MBR360 MBR360 MBR320, MBR330, MBR340, Diode MBR350

    MBR360

    Abstract: motorola b330
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF MBR320 MBR340 MBR330 MBR350 MBR360 BR340 MBR360 motorola b330

    MBR360

    Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF MBR320, MBR330, MBR340, MBR350, MBR360 MBR360 MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA A x ia l L e a d R e c tifie r s MBR350 MBR360 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with


    OCR Scan     		PDF MBR350/D