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    DIODE MARKING CODE A13 Search Results

    DIODE MARKING CODE A13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING CODE A13 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Other Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF Max. Reverse Current @ VR VRRM (V) VF (V) IF (mA) IR (µA) VR (V) Max. Diode Max. Reverse CapaciRecovery tance Pinout Package @1MHz Diag. Time 0V CT


    Original     		MMBD1501A MMBD1503A MMBD1504A MMBD1505A PDF

    MMBD1503

    Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
    Text: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.


    Original     		OT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 MMBD1501A MMBD1503A MMBD1504A MMBD1505A MMBD1503 MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1312013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP10U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP10U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1311023 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 PDF

    a15 diode

    Abstract: diode MARKING CODE a13 MMBD1503A sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13
    Text: High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Two element incorporated into one package. Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and assembly cost by one half. z RoHS product for packing code suffix "G",


    Original     		MMBD1501A/1503A/ 504A/1505A MMBD1501A MMBD1503A MMBD1504A MMBD1505A OT-23 MMBD1501A MMBD1503A MMBD1504A a15 diode diode MARKING CODE a13 sot-23 diode marking Av SOT23 DIODE marking CODE AV SOT-23 MARKING AV SOT-23 marking BR 357 SOT23 sot-23 marking code pd sot-23 br 13 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20H150C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF20U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311001 PDF

    MOSFET A13

    Abstract: No abstract text available
    Text: TSM6NB60 600V N-Channel MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 600 1.6 @ VGS =10V 6 Features Block Diagram ● Advanced high dense cell design. ● High Power and Current handing capability.


    Original     		TSM6NB60 O-220 ITO-220 TSM6NB60CZ TSM6NB60CI 50pcs MOSFET A13 PDF

    Untitled

    Abstract: No abstract text available
    Text: PPJA3413 20V P-Channel Enhancement Mode MOSFET Voltage -20 V -3.4A Current SOT-23 Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-3.4A<82mΩ  RDS(ON) , VGS@-2.5V, ID@-2.2A<110mΩ  RDS(ON) , VGS@-1.8V, ID@-1.2A<146mΩ  Advanced Trench Process Technology


    Original     		PPJA3413 OT-23 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD1501A / 1503A / 1504A / 1505A SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features      Very Low Leakage Current Single and Dual Diode Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications


    Original     		MMBD1501A OT-23, MIL-STD-202, PDF

    SOT23 DIODE marking CODE AV

    Abstract: a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV
    Text: MMBD1501A/1503A/1504A/1505A High Conductance Low Leakage Diode SOT-23 Features — Two element incorporated into one package. Emitter-coupled transistors — Reduction of the mounting area and assembly cost by one half. Applications — Dimensions in inches and (millimeters)


    Original     		MMBD1501A/1503A/1504A/1505A OT-23 MMBD1501A MMBD1503A MMBD1504A MMBD1505A MMBD1501A MMBD1503A MMBD1504A MMBD1505A SOT23 DIODE marking CODE AV a15 diode 357 SOT23 marking A11 SOT-23 MARKING AV sot-23 marking a13 marking AV package sot23 diode a13 A14 marking SOT sot23 package marking AV PDF

    marking 08 sot-23

    Abstract: BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A
    Text: BL Galaxy Electrical Production specification High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Pb Two element incorporated into one package. Lead-free Emitter-coupled transistors z MMBD1501A MMBD1503A Reduction of the mounting area and


    Original     		MMBD1501A/1503A/ 504A/1505A MMBD1501A MMBD1503A MMBD1504A MMBD1505A OT-23 marking 08 sot-23 BL SOT23 a15 diode a13 marking sot23 1504A SOT A14 marking SOT23 V 4 diode A14 marking SOT SOT23 A13 MMBD1503A PDF

    Untitled

    Abstract: No abstract text available
    Text: UGF8JD Taiwan Semiconductor CREAT BY ART Isolated Ultra Fast Rectifier FEATURES - Especially suited as boost diode on continuous mode power factor correctors - Ideal Solution for hard switching condition - High capability for high di/dt operation. Downsizing of mosfet and heatsink


    Original     		AEC-Q101 2011/65/EU 2002/96/EC ITO-220AC D1312023 PDF

    A13 MARKING CODE

    Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original     		TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP O-251 75pcs A13 MARKING CODE transistor a13 MARKING a13 A13 transistor a13 marking transistor diode MARKING CODE a13 PDF

    power transistor Ic 4A NPN to - 251

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
    Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability


    Original     		TSC5804D O-251 O-252 TSC5804DCH TSC5804DCP O-251 75pcs power transistor Ic 4A NPN to - 251 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13 PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF