Untitled
Abstract: No abstract text available
Text: SKN 6000 THYRISTOR BRIDGE,SCR,BRIDGE Disc Diode Rectifier Diode SKN 6000 EFC8 EFF8 E VJJ ZJJ E VJJ ZJJ G?KE H OJJJ K L'17P IQJR S/ H QT U$N CWX OJJJYJV CWX OJJJYJZ OJJ OJJ CWX OJJJYJO Symbol Conditions G?KE '17P IQJR BC$ INR S/ H QT LIJJN U$ Values Units OJJJ LTZJJN
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302GB
Abstract: No abstract text available
Text: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT . .23 6 "8+ SEMiX 2 SPT IGBT Modules SEMiX 302GB128D Target Data Features ! " !
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302GB128D
302GB
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diode KE 8
Abstract: diode KE
Text: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT . .23 6 "8+ SEMiXTM 2 SPT IGBT Modules SEMiX 302GB128D Target Data Features ! " !
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302GB128D
diode KE 8
diode KE
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TCD1254GFG(8Z)
Abstract: No abstract text available
Text: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO
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75GB063D
75GAR063D
TCD1254GFG(8Z)
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302GB128D
Abstract: 302Gb128
Text: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT . .23 6 "8+ SEMiXTM 2 SPT IGBT Modules SEMiX 302GB128D Target Data Features ! " !
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302GB128D
302GB128D
302Gb128
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Untitled
Abstract: No abstract text available
Text: SKiiP 36NAB126V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper J;CR .; .;1X J/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; ([ Diode - Inverter, Chopper MiniSKiiP 3 (& P GF UVSW Q; .$ .$1X ([
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36NAB126V1
36NAB126V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 26AC126V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter J;CR .; .;1X J/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; '@ Y L K& (¥ Diode - Inverter MiniSKiiP 2 .$ .$1X (& P GF UVSW Q; '@ Y L K& (¥ 3-phase bridge inverter
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26AC126V1
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Untitled
Abstract: No abstract text available
Text: SKiiP 37AC126V2 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter J;CR .; .;1Y J/CR & P GF Q;N 4+8*&& 2'-* 79&* &@*,969*5 (& P GF UVSW Q; '@ Z L K& (¥ Diode - Inverter MiniSKiiP 3 .$ .$1Y (& P GF UVSW Q; '@ Z L K& (¥ 3-phase bridge inverter
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37AC126V2
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Untitled
Abstract: No abstract text available
Text: SKM 100GB063D 7% U OV WH+ / * 00 ,3&)4?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 7X U OV WH :H 7X U MVN WH :H]^ ZNN G M[N L 7%'0) U ¥N WH MNN L ONN L ` ON G MN d0 7%'0) U OV WH MNN L 7%'0) U eN WH ¥V L ONN L ¥ON L ONN L 8 fN EEE g MVN
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100GB063D
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SED40KE
Abstract: "Schottky Rectifiers"
Text: HIGH VOLTAGE SCHOTTKY RECTIFIERS Solid State Devices, Inc. SSDI is excited to release its new high voltage, low VF schottky rectifiers for the military and aerospace industries. The examples below feature 40 - 80 amp, 150 - 200 volt schottky rectifiers with TX, TXV, & S level screening available. Screening is based on MIL-PRF-19500. Screening flows are available on request. Contact us today for samples or more information about our high reliability schottky devices.
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MIL-PRF-19500.
SED40KB200
SSR40G200
O-254
O-254Z
SH0066B
SED40KE
"Schottky Rectifiers"
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abb earth leakage relay
Abstract: motor abb mtbf insulation monitoring relay 60947-5-1 abb cmiWS1 ABB GB14048. 3 fuse abb mtbf LED monitor circuit diagram AC12 F0209
Text: Data sheet Insulation monitoring relay CM-IWS.1 For unearthed AC, DC and mixed AC/DC systems up to Un = 250 V AC and 300 V DC The CM-IWS.1 serves to monitor insulation resistance in accordance with IEC 61557-8 in unearthed IT AC systems, IT AC systems with galvanically connected DC circuits, or unearthed IT
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Untitled
Abstract: No abstract text available
Text: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung
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440CA,
DO-15
DO-204AC)
UL94V-0
24-Standard.
P6KE160CA
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diode 1.5 ke 36 ca
Abstract: diode KE KE200A 520C DO-204AC KE10 KE10A
Text: P6 KE 6.8 . P6 KE 440CA, P6 KE 520C Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 600 W Nominal breakdown voltage Nominale Abbruch-Spannung
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440CA,
DO-15
DO-204AC)
UL94V-0
24-Standard.
P6KE160CA
diode 1.5 ke 36 ca
diode KE
KE200A
520C
DO-204AC
KE10
KE10A
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Untitled
Abstract: No abstract text available
Text: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT . .23 4 "6+ SEMiX 2 SPT IGBT Modules SEMiX 302GB128D Preliminary Data Features ! " !
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302GB128D
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302GB128D
Abstract: No abstract text available
Text: SEMiX 302GB128D Absolute Maximum Ratings Symbol Conditions IGBT . .23 4 "6+ SEMiX 2 SPT IGBT Modules SEMiX 302GB128D Preliminary Data Features ! " !
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302GB128D
SEMI28D
302GB128D
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diode 1.5 ke 107 ca
Abstract: KE200A KE51A DO-204AC KE10 KE10A KE11 diode 1.5 ke 36 ca
Text: P4 KE 6.8 . P4 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 400 W Nominal breakdown voltage Nominale Abbruch-Spannung
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440CA
DO-15
DO-204AC)
UL94V-0
P4KE160CA
P4KE27A
24-Standard.
diode 1.5 ke 107 ca
KE200A
KE51A
DO-204AC
KE10
KE10A
KE11
diode 1.5 ke 36 ca
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diode 1.5 ke 36 ca
Abstract: KE200A KE 76 DIODE diode KE43A KE 75 DIODE KE250A ke68A diode 1.5KE-160CA diode KE ke82a
Text: 1.5 KE 6.8 . 1.5 KE 440CA Unidirectional and bidirectional Transient Voltage Suppressor Diodes Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden Peak pulse power dissipation Impuls-Verlustleistung 1500 W Nominal breakdown voltage Nominale Abbruch-Spannung
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440CA
UL94V-0
5KE160CA
5KE27A
24-Standard.
diode 1.5 ke 36 ca
KE200A
KE 76 DIODE
diode KE43A
KE 75 DIODE
KE250A
ke68A diode
1.5KE-160CA
diode KE
ke82a
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Untitled
Abstract: No abstract text available
Text: s e MIKRDN > > SEMIPACK 2 Ii I fr m s maximum values for continuous operation 220 A Fast Diode Modules I fa v (sin. 180; Tease = 6 5 °C; 5 0 Hz) 140 A SKKE 120 F 1500 SK KE 120 F 15 Preliminary data 1600 SK KE 120 F 16 V Symbol Conditions If a v sin. 180; Tpase ~ 85 C
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Untitled
Abstract: No abstract text available
Text: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )
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SKKD15
SKKE15
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Untitled
Abstract: No abstract text available
Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
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SEP8506
SDP8406
SDP8106
SDP8000/8600
SEP8506
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Untitled
Abstract: No abstract text available
Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106
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SEP8706
SDP8406
SDP8106
SDP8000/8600
SEP8706
G0224T4
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sfb455
Abstract: sn76881 diode 937 ke sn7689 sn76751n 752N
Text: V iT e x a s I n strum en ts LIMITED MAMUFACTUMM6 SPECIFICATION APRIL 2, 1980 TEXAS INSTRUMENTS LIMITED TENTATIVE SPECIFICATION 30 CHANNEL REMOTE CONTROL TRANSMITTER RES, 002 93 2 SN76742N SN76752N FORMERLY SN76831N16/832N16 THIS DESCRIPTION IS INTENDED ONLY FOR ENGINEERING EVALUATION
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SN76742N
SN76752N
SN76831N16/832N16
SN76742N/752N
TM51Q00
1MS9940
SN76891*
SN76882'
200ms
sfb455
sn76881
diode 937 ke
sn7689
sn76751n
752N
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diode KE
Abstract: semikron MD thyristor kl diode Diode KD 6 17 PONT DIODE thyristor code thyristor push pull SEMISTACK semikron power assemblies SEMIKRON book
Text: se m ik r o n SEMIKRON Power Semiconductors Contents Section 1 2 3 4 5 6 6 7 8 9 10 11 12 13 Product SEMIPACK Thyristor/Diode Modules Fast SEMIPACtC Diode Modules Thyristors Thyristor Pairs for Water Cooling SEMITRANS® M Power MOSFET Modules SEMITRANS® M IGBT Modules
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Untitled
Abstract: No abstract text available
Text: ▼ Semiconductor, Inc. TC 74 TINY SERIAL DIGITAL THERMAL SENSOR FEATURES • ■ ■ ■ ■ ■ Digital Temperature Sensing in SOT-23-5 Package Outputs Temperature as an 8-Bit Digital Word Simple Serial Port Interface Solid State Temperature S ensing.
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OT-23-5
D-82152
TC74-4
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