DIODE 19 9
Abstract: No abstract text available
Text: SKM 75GB063D . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )'
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75GB063D
75GB063D
75GAR063D
75GAL063D
DIODE 19 9
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DIODE 19 9
Abstract: No abstract text available
Text: SKM 75GB063D Absolute Maximum Ratings Symbol Conditions IGBT ' ) )>? ( ' ,A ( 8 19 =9 :) 8 19 =9 :) 8 / B'>-B C Superfast NPT-IGBT Modules SKM 75GB063D * *>? 8 19 F0 :) 8 19 F0 :) 8 / *? 8 /0 G &G A 8 /90 :)
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75GB063D
75GB063D
75GAR063D
75GAL063D
DIODE 19 9
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 - 8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G 8 19 :) >9 - 8 H0 :) 90 - /90 - ; 8 /90 :) II0 - 8 19 :)
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75GB063D
75GAR063D
75GAL063D
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RAA 0.8
Abstract: No abstract text available
Text: SKM 75GB063D . Absolute Maximum Ratings Symbol Conditions IGBT ' ) )>? ( ' ,A ( 8 19 =9 :) 8 / B'>-B C Superfast NPT-IGBT Modules SKM 75GB063D * *>? 8 19 F0 :) 8 / *? 8 /0 G &G A 8 /90 :) Features
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75GB063D
75GAR063D
75GAL063D
RAA 0.8
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 - 8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G 8 19 :) >9 - 8 H0 :) 90 - /90 - ; 8 /90 :) II0 - 8 19 :)
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75GB063D
75GAR063D
75GAL063D
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D . Absolute Maximum Ratings Symbol Conditions IGBT ' ) )>? ( ' ,A ( 8 19 =9 :) 8 / B'>-B C Superfast NPT-IGBT Modules SKM 75GB063D * *>? 8 19 F0 :) 8 / *? 8 /0 G &G A 8 /90 :) Features
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75GB063D
75GAR063D
75GAL063D
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DIODE 19 9
Abstract: No abstract text available
Text: SKM 75GB063D . Absolute Maximum Ratings Symbol Conditions IGBT ' ) )>? ( ' ,A ( 8 19 =9 :) 8 / B'>-B C Superfast NPT-IGBT Modules SKM 75GB063D * *>? 8 19 F0 :) 8 / *? 8 /0 G &G A 8 /90 :) Features
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75GB063D
75GB063D
75GAR063D
75GAL063D
DIODE 19 9
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TCD1254GFG(8Z)
Abstract: No abstract text available
Text: SKM 75GB063D 8% W PX YH+ / * 00 ,4&)5?20) 09)%2D2)@ Absolute Maximum Ratings Symbol Conditions IGBT GHF1 8Z W PX YH :H 8Z W NXO YH :H^_ ¥OO G NOO L 8%'0) W ]X YH ]X L NXO L a PO G 8Z W NPX YH NO f0 8%'0) W PX YH ]X L 8%'0) W gO YH XO L NXO L 8Z W NXO YH hhO
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75GB063D
75GAR063D
TCD1254GFG(8Z)
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Untitled
Abstract: No abstract text available
Text: SKM 75GB063D 8 19 : % ! Absolute Maximum Ratings Symbol Conditions IGBT )' ; 8 19 :) ) ; 8 /90 :) )?@ =00 ( /00 - 8 >9 :) >9 - /90 - B 10 ( ; 8 /19 :) /0 G 8 19 :) >9 - 8 H0 :) 90 - /90 - ; 8 /90 :) II0 -
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75GB063D
75GAR063D
75GAL063D
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NPT-IGBT SKM
Abstract: skm 50 gb 100 d
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 600 600 100 / 75 200 / 150 ± 20 350 –40 . +(125) 150 2500 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms
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skm 200 gb 122 d
Abstract: semikron skkt 132/ 14/ E Semitrans M SKD 100 GAL 124d Semikron SKR 26 /12 semikron skkh 161 semikron skkt 162/ 12/ D semipack skkt 161 sknh 210 semikron skt 240 SKKL131
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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IEC 974-1
Abstract: SKM 400GB062D 195GB124DN 200gb 400GB062D 200GB123D 2119 SKM400GB123D 300GB174D 145GB123D
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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SKM 400GB062D
Abstract: 62792 02634 SKM 400GD063D heatsink for skkt 72 semikron skt 140 IEC 974-1 Semitrans M SKD 100 GAL 124d 6822 semikron skkt 31
Text: Calculation of the Maximum Virtual Junction Temperature Reached Under Short-time or Intermittent Duty1 Under short-time or intermittent load higher current ratings are permissible for the power semiconductors than those given in the data sheets for continuous operating. It is,
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300GD063D
125GD127D
85GD127D
350GD063DM
250GD128D
350GD128DM
400GD063D
400GD128D
500GD128DM
SKM 400GB062D
62792
02634
SKM 400GD063D
heatsink for skkt 72
semikron skt 140
IEC 974-1
Semitrans M SKD 100 GAL 124d
6822
semikron skkt 31
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semikron skm 75gb
Abstract: No abstract text available
Text: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)
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