GEZ DIODE
Abstract: 4-KD20 GEZ 26 42kD
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
42kD
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GEZ DIODE
Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)
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-KD20
4-KD20
2-KD20
62-KD20
42-KD20
GEZ DIODE
GEZ 26
"Temperature Switch"
2kd20
Diode KD 202
KD 310
Diode KD 6 17
gez 8.5 diode
54kd
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KD 502
Abstract: No abstract text available
Text: ar y n i im prel iC-LO TRIANGULATION SENSOR Rev A1, Page 1/21 FEATURES APPLICATIONS ♦ Specially formed line image sensor comprising 129 elements ♦ High ambient light suppression of up to 100 kLux with filter glass ♦ Dynamic range of 100 dB ♦ 2 antivalent switching outputs
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D-55294
KD 502
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2SD1399
Abstract: No abstract text available
Text: 2SD1399 No.1225 NPN Triple Diffused Planar Type Silicon Transistor 4 ? SANYO For Horizontal Output Built-in Damper Diode Features: • High Breakdown Voltage and High Reliability. • H i g h S w i t c h i n g Speed. • C a p a b l e of b e i n g m o u n t e d e a s i l y d u e to o n e - p o i n t f i x i n g t y p e p l a s t i c s m o l d
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2SD1399
100mA
le-200mA
tC-200V
1203KI
2SD1399
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B 1344
Abstract: b1344 2sd2025
Text: 2SB1344 2SD2025 Transistors I Power Transistor 100 V, —8A 2SB1344 •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-in resistor between base and emitter. 3 ) Built-in damper diode. 4 ) Complements the 2SD2025. •A b s o lu te maximum ratings (T a = 2 5 t )
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2SB1344
2SD2025
2SD2025.
100ms
2SB1344
10MHz
94L-969-D
B 1344
b1344
2sd2025
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irf540 TTL
Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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IRF640
IRF642
IRF630
IRF632
IRF620
IRF622
VN1706D
IRF641
IRF643
IRF631
irf540 TTL
IRF620
IRF622
IRF630
IRF631
IRF632
IRF633
IRF640
IRF641
IRF642
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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Untitled
Abstract: No abstract text available
Text: PJSD03TS~PJSD36TS SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS 3~36 Volts VOLTAGE 120 Watts POWER • 120 Watts peak pules power tp=8/20 s • Small package for use in portable electronics • Suitable replacement for MLV’S in ESD protection applications
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PJSD03TS
PJSD36TS
OD-523
MIL-STD-750
PJSD03TS
PJSD05TS
PJSD07TS
PJSD08TS
PJSD12TS
PJSD15TS
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Allen-Bradley 100-C09Z*10
Abstract: 100-c09*10 100-C43*00 100-C09ZJ10 Allen-Bradley 100-c09*10 100-C23*10 Allen-Bradley 100-c37*00 c 100-M09N3 Allen-Bradley 100-M09 100-C23*200
Text: Bulletin 100-M, 100-C, 104-C, 100S-C, 104S-C, CAB6, 100-G Contactors Contactors Bulletin 100-M, 100-C, CAB6 • Bulletin 100-M 2.2 … 5.5 kW • Bulletin 100-C 4 … 45 kW • Bulletin CAB6 45 … 220 kW 4 Pages 4-9 … 4-64 Bulletin 100S, 104S Safety Contactors
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100-M,
100-C,
104-C,
100S-C,
104S-C,
100-G
100-M
100-C
Allen-Bradley 100-C09Z*10
100-c09*10
100-C43*00
100-C09ZJ10
Allen-Bradley 100-c09*10
100-C23*10
Allen-Bradley 100-c37*00 c
100-M09N3
Allen-Bradley 100-M09
100-C23*200
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Allen-Bradley 100-c09*10
Abstract: Allen-Bradley 100-C09Z*10 CEFB1 100-dny41r 100-c09*10 Allen-Bradley 100-M09 100 c16z kcd4 switch CAB6-140-EI 100-MCA02
Text: Bulletin 100-M, 100-C, 104-C, 100S-C, 104S-C, CAB6, 100-G Contactors Contactors Bulletin 100-M, 100-C, CAB6 • Bulletin 100-M 2.2 … 5.5 kW • Bulletin 100-C 4 … 45 kW • Bulletin CAB6 45 … 220 kW 4 Pages 4-9 … 4-64 Bulletin 100S, 104S Safety Contactors
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100-M,
100-C,
104-C,
100S-C,
104S-C,
100-G
100-M
100-C
Allen-Bradley 100-c09*10
Allen-Bradley 100-C09Z*10
CEFB1
100-dny41r
100-c09*10
Allen-Bradley 100-M09
100 c16z
kcd4 switch
CAB6-140-EI
100-MCA02
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16c72a
Abstract: 5v power supply using lm7805 with bridge rectifier 393f AN701 A 393F inductor 100uH p16c72a 28E8 1uf/35v 3C50
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
16c72a
5v power supply using lm7805 with bridge rectifier
393f
AN701
A 393F
inductor 100uH
p16c72a
28E8
1uf/35v
3C50
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16c72a
Abstract: P16C72A 1F04 AN701 5v power supply using lm7805 with bridge rectifier 5V power supply using LM7805 and bridge rectifier scl 1003 28E4
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
DS00701A-page
16c72a
P16C72A
1F04
AN701
5v power supply using lm7805 with bridge rectifier
5V power supply using LM7805 and bridge rectifier
scl 1003
28E4
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crimper CT 3508
Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Text: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.
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16c72a
Abstract: DS275 P16C72A 16C72 1uf/35v A 393F buck converter with dsPIC KI 78L05 PID control dsPIC PID control dsPIC DC motor
Text: AN701 Switch Mode Battery Eliminator Based on a PIC16C72A Analog-to-Digital Converter Module Author: Brett Duane Microchip Technology OVERVIEW The PIC16C72A is a member of the PICmicro MidRange Family of 8-bit, high-speed microcontrollers. The PIC16C72 provides the following features:
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AN701
PIC16C72A
PIC16C72A
PIC16C72
D-81739
16c72a
DS275
P16C72A
16C72
1uf/35v
A 393F
buck converter with dsPIC
KI 78L05
PID control dsPIC
PID control dsPIC DC motor
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IEC 947 EN 60947
Abstract: Allen-Bradley contactors 100s Allen-Bradley 100-FSD250 lr13908 100-FSC280 100-SA10 IEC 158-1 VDE 0660 DIN19240 700S-CF440DJC Allen-Bradley contactor 100s-c09
Text: Bulletin 100S-C/104S-C Safety Contactors Bulletin 700S-CF Safety Control Relays Selection Guide Table of Contents Description Page Bulletin 100S-C/104S-C Safety Contactors Product Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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100S-C/104S-C
700S-CF
100S-C/104S-C
S-C3004C.
C8504C
100S-C09404C.
C23404C
100S-C09304C.
IEC 947 EN 60947
Allen-Bradley contactors 100s
Allen-Bradley 100-FSD250
lr13908
100-FSC280
100-SA10
IEC 158-1 VDE 0660
DIN19240
700S-CF440DJC
Allen-Bradley contactor 100s-c09
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DC PID 13 AX/T
Abstract: dc-dc PID 13 AX/T PID SMPS full-bridge dsPIC PID control SMPS PIC H bridge converter with dsPIC AN1207 datasheet AN1207 PID 13 AX/T DC dc-dc PID 13 PID 13 AX/T DC-dc
Text: AN1207 Switch Mode Power Supply SMPS Topologies (Part II) Author: Antonio Bersani Microchip Technology Inc. INTRODUCTION This application note is the second of a two-part series on Switch Mode Power Supply (SMPS) topologies. The first application note in this series, AN1114 “Switch Mode Power Supply (SMPS) Topologies (Part
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AN1207
AN1114
DS01207B-page
DC PID 13 AX/T
dc-dc PID 13 AX/T
PID SMPS full-bridge dsPIC
PID control SMPS PIC
H bridge converter with dsPIC
AN1207 datasheet
AN1207
PID 13 AX/T DC
dc-dc PID 13
PID 13 AX/T DC-dc
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transistor BD 512
Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern
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12-VAkku
/50Hz
III/18/379
transistor BD 512
transistor kt 801
transistor kt
Diode KD 202
junost 603
kt801b
GT 404
GT313B
MP 41 transistor
MP42A
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IS1540
Abstract: C150 ixys st 380-02F
Text: 3i,;i •■ MegaMOS FET Module IC1f*tipï*''irt'ï: VMO 380-02 F VDSS = 200 V = 385 A D25 RDS on = 4.6 m fì N-Channel Enhancement Mode Preliminary data 2 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C 200 V vDGR Tj = 25°C to 150°C; Res = 10 kD
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00D34Tb
IS1540
C150
ixys st
380-02F
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1n6207
Abstract: 1N6207A diode lts 246 R 360 A 5KE350 5KE220CA 5KE180 KD 109
Text: 1.5KE6.8 THRU 1.5KE440CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 440 Volts Peak Pulse Power - 1500 Watts _ FEATURES_ Case Style 1.5KE ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
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5KE440CA
10/1000ns
1n6207
1N6207A
diode lts 246 R 360 A
5KE350
5KE220CA
5KE180
KD 109
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Untitled
Abstract: No abstract text available
Text: MMBD101/MMBD352/MMBD353/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE SOT- 23 250 mW POWER 7.0 Volts VOLTAGE Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) Applications • Low V F : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed
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MMBD101/MMBD352/MMBD353/MMBD354/MMBD355
OT-23,
MIL-STD-750,
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kuka
Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
Text: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 70 Outlines Heatsinks May 2006 01 K 1.1 - M 12 G = 0,635 kg K 0.55 - FB 54 - A G = 1,760 kg K0.55 - M 12 K0.55 - M 24 x 1,5 G = 1,760 kg G = 1,760 kg 113 11 15 M8 39 135 135 2 39 2 100 96 1 25 120 50 M24x1.5
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kuka-2006-de-inhalt
M24x1
150mm
120mm
kuka
kd202
GEZ DIODE
D5014
KA206
KA204
THY H 75 B 80
GEZ 44 A diode
T5726
KE02
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2sk20
Abstract: s630t 2SK2026
Text: 2SK2026-01 fS^SO FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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2SK2026-01
20Kf2)
2sk20
s630t
2SK2026
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Untitled
Abstract: No abstract text available
Text: MMBD101W/MMBD352W/MMBD353W/MMBD354W/ MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Low V F : 0.5V (Typ) at IF=10mA .087(2.2) .078(2.0) Applications .004(.10)MIN.
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MMBD101W/MMBD352W/MMBD353W/MMBD354W/
MMBD355W
OT-323
OT-323,
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance
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IRF740/741/742/743
IRFP340/341/342/343
F740/IRFP340
IRF741
/IRFP341
F742/IRFP342
F743/IRFP343
IRF740
IRFP340
IRF741
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