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    IS1540

    Abstract: C150 ixys st 380-02F
    Text: 3i,;i •■ MegaMOS FET Module IC1f*tipï*''irt'ï: VMO 380-02 F VDSS = 200 V = 385 A D25 RDS on = 4.6 m fì N-Channel Enhancement Mode Preliminary data 2 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C 200 V vDGR Tj = 25°C to 150°C; Res = 10 kD


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    PDF 00D34Tb IS1540 C150 ixys st 380-02F

    HYM533400

    Abstract: No abstract text available
    Text: HYM533400 M-Series HYUNDAI 4M x 33-bit CMOS DRAM MODULE DESCRIPTION The HYM533400 is a 4M x 33-bit Fast page mode CMOS DRAM module consisting of thirty three HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22juF decoupling capacitor is mounted for each


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    PDF HYM533400 33-bit HY514100A 22juF HYM533400M/LM HYM533400MG/LMG 1CE11-11-FEB94