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    DIODE GP 1.22 Search Results

    DIODE GP 1.22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE GP 1.22 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including


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    4927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF AN1001) O-220AB O-220 O-262 IRFB41N15D PDF

    IRFB16N50K

    Abstract: No abstract text available
    Text: PD - 95855 IRFB16N50K SMPS MOSFET Applications HEXFET Power MOSFET Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits l l l l VDSS RDS(on) typ. 285m: 500V Benefits Low Gate Charge Qg results in Simple Drive


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    IRFB16N50K O-220AB O-220AB IRFB16N50K PDF

    IRFS52N15D

    Abstract: No abstract text available
    Text: PD - 94815 IRFB52N15DPbF IRFS52N15D IRFSL52N15D SMPS MOSFET Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB version is currently available in a lead-free configuration Benefits Low Gate-to-Drain Charge to Reduce Switching Losses


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    IRFB52N15DPbF IRFS52N15D IRFSL52N15D O-220AB AN1001) IRFS52N15D O-262 PDF

    IRF3710S

    Abstract: IRF3710L IRF 450 MOSFET AN-994 IRF3710
    Text: PD - 94201A IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 23mΩ G ID = 57A S Description


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    4201A IRF3710S IRF3710L EIA-418. IRF3710S IRF3710L IRF 450 MOSFET AN-994 IRF3710 PDF

    IRL3713S

    Abstract: No abstract text available
    Text: PD - 97011A IRL3713PbF IRL3713SPbF IRL3713LPbF SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free


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    7011A IRL3713PbF IRL3713SPbF IRL3713LPbF O-220AB IRL3713PbF IRL3713SPbF O-262 O-220A IRL3713S PDF

    AN-994

    Abstract: IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint
    Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω


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    91305C IRFZ46NS) IRFZ46NL) IRFZ46NS IRFZ46NL EIA-418. AN-994 IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint PDF

    IRFZ46NL

    Abstract: IGBT GS AN-994 IRFZ46N IRFZ46NS Voltage Regulator 5V 10V for IRFZ46N
    Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω


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    91305C IRFZ46NS) IRFZ46NL) IRFZ46NS IRFZ46NL EIA-418. IRFZ46NL IGBT GS AN-994 IRFZ46N IRFZ46NS Voltage Regulator 5V 10V for IRFZ46N PDF

    Untitled

    Abstract: No abstract text available
    Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be


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    LX1994 LX1994 LX1970) guara3-2570 PDF

    FDV303

    Abstract: FDN337
    Text: LX1994 TM High Efficiency LED Driver P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION The use of external N-channel MOSFET allows design to optimize system efficiency. The OVP protection comparator eliminates the need of an external Zener diode clamp. The OVP function can be


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    LX1994 LX1994 LX1970) guaran893-2570 FDV303 FDN337 PDF

    IRF2804

    Abstract: MOSFET driver 175C
    Text: PD - 94436B IRF2804 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 2.3mΩ


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    94436B IRF2804 O-220AB IRF2804 MOSFET driver 175C PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


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    94607B IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 O-220 IRGB4B60KD1 O-262 AN-994. PDF

    irf 1830

    Abstract: 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K
    Text: PD - 94799A IRGB30B60K IRGS30B60K IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • • • • • IC = 50A, TC=100°C at TJ=175°C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.


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    4799A IRGB30B60K IRGS30B60K IRGSL30B60K O-220AB O-262 AN-994. irf 1830 1085 CT 600v 30a IGBT TRANSISTOR D 1785 irf 44 n AN-994 C-150 IRGB30B60K IRGS30B60K IRGSL30B60K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95812 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power IRF3707Z IRF3707ZS IRF3707ZL HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    IRF3707Z IRF3707ZS IRF3707ZL O-220AB O-262 O-220AB PDF

    automotive mosfet

    Abstract: AN-994 IRF2907Z IRF2907ZL IRF2907ZS
    Text: PD - 95872 IRF2907Z IRF2907ZS IRF2907ZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 75V RDS on = 4.5mΩ‰


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    IRF2907Z IRF2907ZS IRF2907ZL O-220AB automotive mosfet AN-994 IRF2907Z IRF2907ZL IRF2907ZS PDF

    95835

    Abstract: mosfet 30V 18A TO 252 IRF3709Z IRF3709ZL IRF3709ZS
    Text: PD - 95835 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power IRF3709Z IRF3709ZS IRF3709ZL HEXFET Power MOSFET VDSS RDS on max 6.3m: 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage


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    IRF3709Z IRF3709ZS IRF3709ZL O-220AB O-262 95835 mosfet 30V 18A TO 252 IRF3709Z IRF3709ZL IRF3709ZS PDF

    IRF3707Z

    Abstract: IRF3707ZL IRF3707ZS
    Text: PD - 95812A Applications l High Frequency Synchronous Buck Converters for Computer Processor Power IRF3707Z IRF3707ZS IRF3707ZL HEXFET Power MOSFET VDSS RDS on max 9.5m: 30V Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


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    5812A IRF3707Z IRF3707ZS IRF3707ZL O-220AB O-262 O-220AB IRF3707Z IRF3707ZL IRF3707ZS PDF

    LR14385

    Abstract: RT78625 siemens relay 24vdc RTE24024F RT16016 RPMT00A0 8A DPDT RELAY 220 latching RELAY DPDT 12V 12v 16A diagram RY16041
    Text: RT series Miniature Printed Circuit Board Relays, Sockets and Accessories RT series DC Coil 16 Amp PC Board Miniature Relay Meets VDE 10mm Spacing, 5KV Dielectric File E22575 File LR15734 NR 6106 Features Coil Data @ 25°C • SPST through DPDT contact arrangements.


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    E22575 LR15734 400mW. 48VDC. 500VDC RT16016 RY16041 LR14385 RT78625 siemens relay 24vdc RTE24024F RT16016 RPMT00A0 8A DPDT RELAY 220 latching RELAY DPDT 12V 12v 16A diagram RY16041 PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


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    msc 1697

    Abstract: 486A-486B nec 08f DLS FT 031 awg 1608 F60A1B Transistor NEC 05F 6J200A3B KULKA 9-85 1432126
    Text: ENGINEERING CATALOG March, 2008 What’s New: • Flexible Stranded Wire UL Rating Information • SCCR with Fuses or Circuit Breakers • Datasheets on www.marathonsp.com • • • • FUSE HOLDERS POWER BLOCKS TERMINAL BLOCKS CUSTOM PRODUCTS www.marathonsp.com


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    6137K/SK/7500/3-08/DBH msc 1697 486A-486B nec 08f DLS FT 031 awg 1608 F60A1B Transistor NEC 05F 6J200A3B KULKA 9-85 1432126 PDF

    TO-220AB transistor package

    Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C


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    94545B IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB TO-220AB transistor package C-150 IRGB8B60K IRGS8B60K IRGSL8B60K PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


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    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


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    PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 PDF