SGS30DA070D
Abstract: 57558 SGS30DA060D 19002D SGS30DA060 SGS30D
Text: S G S-THOilSON D7E D I TRANSPACK NPN POWER DARLINGTON 19001 m o dule APPLICATIONS: 7^237 These products are silicon NPN power dariingtons for industrial switching applications with three-phase mains operation. FAST FREEWHEEL DIODE ISOLATED POWER MODULE 30KVA - 375W
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SGS30DA060D
SGS30DA070D
30KVA
SGS30DA070D
57558
19002D
SGS30DA060
SGS30D
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A4N48A
Abstract: 4N47A
Text: TEXAS INSTR {OPTO} □7E D | flìblTSb 007S13T 7 | 4N47A, 4N48A, 4N49A OPTOCOUPLERS T -H t-% 3 D3127, JU N E 1988 GALLIUM ARSENIDE DIODE INFRARED SOURCE OPTICALLY COUPLED TO A HIGH-GAIN N-P-N SILICON PHOTOTRANSISTOR • Both Input and Output Circuits are Isolated
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007S13T
4N47A,
4N48A,
4N49A
D3127,
4N49A)
OD7S144
A4N48A
4N47A
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ETC 529 DIODE
Abstract: devar Devar amplifier ERIE CAPACITORS red ERIE CAPACITORS 539-005-5 devar CAPACITORS ETC 529 capacitors erie #8 Ground Wire
Text: DEVAR INC/ C O N T R O L D7E D | S7TtiDflQ O D D I O ^ E □ | T-V/^6 7 DEVAR Inc. photo detector with amplifier typ e-539 INTRODUCTION _ Type 539 Optical Detectors are wide bandwidth 1 ight-to-voltage. converters spec ifically designed for fibre optic data links and instruments requiring fast res
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100MHz
529-XX-5
360ju
ETC 529 DIODE
devar
Devar amplifier
ERIE CAPACITORS red
ERIE CAPACITORS
539-005-5
devar CAPACITORS
ETC 529
capacitors erie
#8 Ground Wire
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tda 2038
Abstract: tda 2023
Text: IGBT-Module BROUN/ABB SEMICON D7E D | 004fl30fl DOODEMD 3 | A S E A r- 3 3 - ^ 7 f t^ f ' p 500-600V ; : Spannung/Voltage ^ Typ/type VII 25-.G1 VII 50-.G1 VII 75-.G1 Kollektor-Emitter-Durchbruchspannung Collector-Emltter Breakdown Voltage V Br ces V 500
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004fl30fl
00-600V
VII100-.
VII150-.
VII200-.
tda 2038
tda 2023
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p217s
Abstract: p317 w55c p217 ic 17358 17356 C82 to-220 DIODE C06 15 C82J W25-C
Text: S G S-THOnSON D7E 1 73C 1 7 355 SGSP216/P2I7 1 SGSP316/P317 ] SGSP516/P517 ; HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V DGR V qs Id Idlm •! P.0« "^stg Tl o Q01?flSû 1 T 3 9 - / / N-CHANNEL POWER MOS TRANSISTORS These products are diffused multi-cell silicon gate
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SGSP216/P217
SGSP316/P317
SGSP516/F517
OT-82
SGSP216
SGSP217
T0-220
SGSP316
SGSP317
SGSP516
p217s
p317
w55c
p217
ic 17358
17356
C82 to-220
DIODE C06 15
C82J
W25-C
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D773
Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Text: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field
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SGSP368/P369
SGSP468/P469
SGSP568/P569
SP368
SP468
SP568
SP369
SP469
SP569
C-130
D773
P369
diode sg 46
diode sg 69
P469
SGSP368
SGSP3B8/P369
SGSP469
sgsp468
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diode sg 87
Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Text: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate
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SGSP101/P102
SGSP201/P202
301/P30Z
SP301
SP302
E--03
SGSP101/P102
SGSP301/P302
1728J
diode sg 87
P302T
SGSP101
GS3J
P302
SGSP
sgsp302
p102
capacitance SG 21
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5n06
Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti
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7la-H37
SEFP5N05
SEFP5N06
0V/60V
C-335
5n06
diode c335
5N05
SEFP5N06
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SGSP157
Abstract: No abstract text available
Text: S G S-THOîISON D7E » | 7 ^ 5 3 7 001704b S ,. « 73C 1 7 3 4 3 D 7— 3 f ' O / i SGSP157 j SGSPI58 . ] N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field
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001704b
SGSP157
SGSPI58
0V/60V
SP157
SGSP157
SGSP158
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Diode D7E
Abstract: sef220 SEF221
Text: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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SEF220
SEF221
SEF222
SEF223
00V/150
SEF223
Diode D7E
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5n06
Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, SEFP5N05 SEFP5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field
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SEFP5N05
SEFP5N06
0V/60V
20Kfl)
300/is,
SGSP351
100/is
s-6059
C-335
5n06
5N05
DIODE c335
17611
17610
SEFP5N06
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C1537
Abstract: SEF830
Text: SG S- TH O n S O N D7E D 73C 17 5 50 7 i 5 c1537 D 0 1 Ô 0 S 3 fl 0 "TT 3 V -// N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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c1537
00V/450V
SEF830
SEF831
SEF832
SEF833
SEF830
SEF83I
SEF832
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RF Power Transistors
Abstract: SEF420
Text: G S-T HOMSQN D7E D 73 C Ï749Q SEF420 SEF421 SEF422 SEF423 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ABSOLUTE M A X IM U M RATINGS
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SEF420
SEF421
SEF422
SEF423
00V/450V
00V/450V
00A///S
C-223
RF Power Transistors
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c2539
Abstract: sef831 SEF630
Text: p ’ v • » • rV iC 't f* S G S-THÖNSON D7E D | 7ciaci23? 0010033 2 J 3C 173 3Q D i N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors.
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SEF630
SEF631
SEF832
SEF633
00V/150
SEF630/SEF631
300/us,
c2539
sef831
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3N35
Abstract: Diode D7E 2N45 SEFM2N45
Text: S G S-THOMSON D7E D 73C 17571 D ! . 'i SEFH2H45/SEFP2N45 SEFM3N33/SEFP3N35 s : SEFM3N40/SEFP3N40 7‘iEclS37 D01flQ74 h t HIGH SPEED SW ITCHIN G APPLICATIONS Iq m Ptot ^stg Ti - f R D S (ON •d 350/400V 3.3 Q 3 A Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 K f l)
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SEFH2H45/SEFP2N45
SEFM3N33/SEFP3N35
SEFM3N40/SEFP3N40
D01flQ74
350/400V
C-296
SEFM2H45/SEFP2N45
SEFH3N35/SEFP3N35
S-6059
3N35
Diode D7E
2N45
SEFM2N45
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p461
Abstract: P561 SGSP461 transistors C106 SGSP561 bv42 sgsp302
Text: S G S-TH O M SO N . ; D7E ; . 73C •* h I "■ SGSP361/P461/P561 ] ;A h SGSP302/P4B2/P562. : l , 1 j D g 17379 7^5^537 HIGH SPEED SWITCHING APPLICATIONS V DSS TO-220 SOT-93 TO-3 A B S O L U T E M A X IM U M R A T IN G S Drain-source voltage VGS = 0 Drain-gate voltage (RGS = 20KD )
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SGSP361/P461/P561
SGSP302/P4B2/P562.
O-220
OT-93
SGSP361
SGSP461
SGSP561
SGSP362
SGSP462
SGSP562
p461
P561
transistors C106
bv42
sgsp302
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SGSP256
Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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SGSP154
SGSP254/255/258
SGSP354/355/356
50V/400V
SGSP254
SGSP354
OT-82
O-220
SGSP155
SGSP256
SGSP356
SP156
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Untitled
Abstract: No abstract text available
Text: S G S-THOHSON D7E D | 7 ^ 5 3 7 O O lS b ö k I In t e g r a t e d n iR n i N TS PRELIMINARY DATA HC620 OCTAL BUS TRANSCEIVER INVERTING 3-STATE HC623 OCTAL BUS TRASCEIVÈR 3-STATE DESCRIPTIO N The M 54/74HC620/623 are high speed CM OS OC TAL BUS TRANSCEIVERS fabricated in silicon
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HC620
HC623
54/74HC620/623
HC620)
HC623)
HC623
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sgsp221
Abstract: P522 SGSP522 P5-22 P322 SGSP321 SGSP421 SGSP321/P322
Text: S ' r f F • , , • ; % G r - - Z , k riI \ -■ S-THOMSON ? D7E D — -5J. 73C 17363 S0SP22I/P222 3 • SGSP321/P322 SGSP421/P422 ■> i • . ' These products are diffused multi-cell silicon gate N-Channel enhancem ent mode Pow er-M os field effect transistors.
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S0SP22I/P222
SGSP321/P322
SGSP421/P422
SGSP221
SGSP321
SGSP421
SGSPS21
SP322
SP522
P522
SGSP522
P5-22
P322
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Untitled
Abstract: No abstract text available
Text: S G S-THOnSON D7E » I 7121237 0011,212 s I Î5 p ! ; f * r LOW POWER SCHOTTKY INTEGRATED CIRCUITS > v 1 67C 16421 t -6 6 -2 1 -5 1 D - QUAD 2-PORT REGISTER QUAD 2-INPUT M ULTIPLEXER W ITH STORAGE DESCRIPTIO N The T54LS298/T74LS298 is a Quad 2-Port Register.
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T54LS298/T74LS298
LS298
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T74LS
Abstract: LS645 LS640 LS641
Text: s G S-THOMSOn D7E D I Lüw P U W tK S U H U INTEGRATED CIRCUITS . _ 67C . 7^5^53? 001L3T? I ;T54LS640/641/645j I IKY D 16526 fl 7c- 5 ' 2 " 3 i PRELIMINARY DATA O CTAL BUS TRANSCEIVERS DESCRIPTION The T54LS/T74LS640/641/645 are octal bus tran
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7t5ts37
t-52-zi
IT74LS640/64Ã
T54LS/T74LS640/641/645
LS640
LS641
LS645
T74LS
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T74LS155
Abstract: No abstract text available
Text: S G S-THONS ON D7E D I 7 ^ 2 3 7 DDlblOQ 3 I LOW POWER SCHOTTKY INTEGRATED CIRCUITS 6 T C - 1 6 2 2 9 . T -6 6 -2 1 -5 5 DUAL 1-OF-4 DECODER/DEMULTIPLEXER DESC RIPTIO N The TTL/MSI T54LS155/T74LS155 and T54LS156/ T74LS156 are high speed Dual 1-of-4 Decoder/De
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T54LS155/T74LS155
T54LS156/
T74LS156
T74LS155
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T0606
Abstract: No abstract text available
Text: S G S-THOHSÔN D7E D | 7 ^ 2 3 7 Mlfc.053 0 | LOW POWER SCHOTTKY INTEGRATED CIRCUITS '* - i 16151 D 7 ~ -V < £ -^ 7 -a 7 DUAL JK POSITIVE EDGE-TRIGGERED FLIP-FLOP DESCRIPTION The T54LS/T74LS109-109A consist of two high s£eed completely independent transition clocked
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T54LS/T74LS109-109A
T54LSXXX
T74LSXXX
T0606
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p239
Abstract: P238 diode P339 diode P339 SGSP338 P-239 INA723 P-139 sgsp238 SGSP138
Text: S G S-THOnSON D7E D | 7 ^ 2 3 7 DDl7fllS S r 73C 17312 SGSP138/P138 SGSP238/P239 SGSP338/P339 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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SGSP138/P138
SGSP238/P239
SGSP338/P339
OT-82
O-220
300jus,
DD17fllfl
SGSP138/P139
SGSP338/P339
p239
P238 diode
P339 diode
P339
SGSP338
P-239
INA723
P-139
sgsp238
SGSP138
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