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    Abstract: No abstract text available
    Text: SGSP101 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)


    Original     		PDF SGSP101

    diode sg 87

    Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
    Text: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate


    OCR Scan     		PDF SGSP101/P102 SGSP201/P202 301/P30Z SP301 SP302 E--03 SGSP101/P102 SGSP301/P302 1728J diode sg 87 P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21