G20N60
Abstract: 24n60au1 IXGH24N60AU1S IXGH24N60AU1 G24N60 IXYS IXGH24N60AU1 TO-247
Text: IXGH 24N60AU1 VCES IXGH 24N60AU1S I C25 VCE sat tfi HiPerFASTTM IGBT with Diode Combi Pack Symbol Test Conditions V CES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 48
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24N60AU1
24N60AU1S
O-247
24N60AU1S)
IXGH24N60AU1S
IXGH24N60AU1
G20N60
IXGH24N60AU1S
IXGH24N60AU1
G24N60
IXYS IXGH24N60AU1 TO-247
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diode c25
Abstract: 1T378A
Text: 1T378A Variable Capacitance Diode Description The 1T378A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners, and the super miniature package allows the tuner miniaturization. High capacitance ratio C25/C28 is improved to
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1T378A
1T378A
C25/C28)
M-235
C2/C25)
diode c25
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C25 diode
Abstract: 1T405A diode c25
Text: 1T405A Variable Capacitance Diode Description The 1T405A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package SSVC . High capacitance ratio (C25/C28) is improved to support guard band.
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1T405A
1T405A
C25/C28)
M-290
C2/C25)
C25 diode
diode c25
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1T405A
Abstract: No abstract text available
Text: 1T405A Variable Capacitance Diode Description The 1T405A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package SSVC . High capacitance ratio (C25/C28) is improved to support guard band.
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1T405A
1T405A
C25/C28)
M-290
C2/C25)
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1T397
Abstract: M235 E94610-TE
Text: 1T397 Variable Capacitance Diode Description The 1T397 is a variable capacitance diode designed for the electronic tuning of wide band CATV tuners, and it has a super miniature package. Features • Super miniature package • Large capacitance ratio C2/C25=14.5Min.
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1T397
1T397
C2/C25
C1C28
C2/C28
03Min.
M-235
M235
E94610-TE
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Reverse voltage diode
Abstract: 1T369
Text: 1T369 Silicon Variable Capacitance Diode Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Features • Super miniature package • Small series resistance rs=1.0 Ω Max. • Large capacitance ratio C2/C25=15.5 (Typ.)
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1T369
1T369
C2/C25
M-235
Reverse voltage diode
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C25 diode
Abstract: 1T397
Text: 1T397 Variable Capacitance Diode Description The 1T397 is a variable capacitance diode designed for the electronic tuning of wide band CATV tuners, and it has a super miniature package. Features • Super miniature package • Large capacitance ratio C2/C25=14.5 Min.
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1T397
1T397
C2/C25
C1/C28
C25/C28
M-235
C25 diode
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c25 diode
Abstract: C25 MARKING CODE tuner sony 1T397
Text: 1T397 Variable Capacitance Diode Description The 1T397 is a variable capacitance diode designed for the electronic tuning of wide band CATV tuners, and it has a super miniature package. Features • Super miniature package • Large capacitance ratio C2/C25=14.5 Min.
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1T397
1T397
C2/C25
C1/C28
C25/C28
M-235
c25 diode
C25 MARKING CODE
tuner sony
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1T369
Abstract: No abstract text available
Text: 1T369 Silicon Variable Capacitance Diode Description The 1T369 is a super miniature package variable capacitance diode for a wide-band CATV. Features • Super miniature package • Small series resistance rs=1.0 Ω Max. • Large capacitance ratio C2/C25=15.5 (Typ.)
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1T369
1T369
C2/C25
M-235
dev28V
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1T411
Abstract: No abstract text available
Text: 1T411 Variable Capacitance Diode Description The 1T411 is a variable capacitance diode designed for analog cellular phone and it has a super miniature package. Features • Super miniature package • Small series resistance 0.40 Ω Max. f=470 MHz • Large capacitance ratio 6.5 Typ. (C2/C25)
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1T411
1T411
C2/C25)
M-235
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Untitled
Abstract: No abstract text available
Text: DIXYS IXSK 35N120AU1 High Voltage IGBT with Diode VCES I C25 vCE sat 1200 V 70 A 4V Short Circuit SOA Capability Prelim inary data Symbol Test C onditions V CES ^ V cO R Tj = 25° C to 150° C; Rge = 1 MC2 VGES v GEM Continuous +20 V Transient ±30 V ^C25
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OCR Scan
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35N120AU1
to150
O-264AA
JEDECTO-264AA
35N120AU1
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igbt to247
Abstract: s9011 IXGH24N60AU1S ixgh24N60
Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25
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IXGH24N60AU1
IXGH24N60AU1S
T0-247
24N60AU1S)
O-247
24N60AU1
B2-41
1XGH24N68AU1
W6H24WWMMl
24N80AU1
igbt to247
s9011
IXGH24N60AU1S
ixgh24N60
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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OCR Scan
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PDF
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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IXSN35N120
Abstract: No abstract text available
Text: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings
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35N120AU1
OT-227
IXSN35N120AU1
4bflb22b
IXSN35N120
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smd diode 819
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C
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OCR Scan
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IXGH32N60AU1
IXGH32N60AU1S
O-247
32N60AU1S)
IXGH32N60AU1
IXQH32N60AU1S
XGH32N60AU1
smd diode 819
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32N50
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N50BU1 IXGH 32N50BU1S v CES ^C25 v CE sat «1, Symbol Test Conditions Maximum Ratings V ces Tj = 25CC to 150CC 500 v CGR T j = 25°C to 150“ C; RGE = 1 M£2 500 V v GES Continuous ±20 V v¥gem Transient ±30 V ^C25 T0 = 25°C
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32N50BU1
32N50BU1S
O-247
32N50BU1S)
32N90BU1
32NS0BU1S
B2-22
32N50
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3un6
Abstract: No abstract text available
Text: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat
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OCR Scan
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30N60BD1
30N60BD1
O-268
freq00
3un6
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C
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OCR Scan
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IXGH30N60BD1
150PC
15CFC;
O-247
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Untitled
Abstract: No abstract text available
Text: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms
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OCR Scan
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32N50BU1
Cto150
O-247
32NS0BU1
B2-47
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Untitled
Abstract: No abstract text available
Text: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads
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OCR Scan
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PDF
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50N60AU1
O-264
IXGK56N60AU1
B2-97
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Untitled
Abstract: No abstract text available
Text: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C
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OCR Scan
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38N60U1
O-247
B2-85
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Untitled
Abstract: No abstract text available
Text: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings
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OCR Scan
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PDF
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N60U1
N60AU1
O-247
4hflb22b
20N60U1
20N60AU1
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Untitled
Abstract: No abstract text available
Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous
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PDF
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10N60U1
N60AU1
4bflb22b
GD0223Ã
10N60AU1
D94006DE,
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Untitled
Abstract: No abstract text available
Text: □IXYS Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH10N60U1 IXGH10N60AU1 VCES ^C25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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PDF
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IXGH10N60U1
IXGH10N60AU1
O-247
00D3Sb3
10N60U1
10N60AU1
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