rxmb1
Abstract: RELAY RZ2 SUMMATION current transformer ABB rxtp 18 rxmd 2 current transformer ABB transformers of power station relay rd3 BUSBAR calculation datasheet relay 6 volt
Text: Bus differential relay using auxiliary summation CT’s REB 101 1-phase 1MRK 505 006-BEN Page 1 Issued: September 2006 Revision: C Data subject to change without notice SE970178 Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults
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Original
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006-BEN
SE970178)
004-BEN
001-BEN
015-BEN
016-BEN
SE-721
rxmb1
RELAY RZ2
SUMMATION current transformer
ABB rxtp 18
rxmd 2
current transformer ABB
transformers of power station
relay rd3
BUSBAR calculation datasheet
relay 6 volt
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PDF
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relay rd3
Abstract: RELAY RZ2 ABB transformer rxmb1 ABB rxtp 18 abb rxmb1 BUSBAR calculation datasheet REB103 RELAY RZ2 5 ABB RXTUG 22H
Text: Bus differential relay REB 103 3-phase 1MRK 505 007-BEN SE970146 Page 1 Issued: September 2006 Revision: C Data subject to change without notice Features • Percentage restrained differential relay for phase-to-phase and phase-to-earth faults. • Very high E/F-sensitivity of the differential
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Original
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007-BEN
SE970146)
003-BEN
001-BEN
007-UEN
015-BEN
016-BEN
004-BEN
SE-721
relay rd3
RELAY RZ2
ABB transformer
rxmb1
ABB rxtp 18
abb rxmb1
BUSBAR calculation datasheet
REB103
RELAY RZ2 5
ABB RXTUG 22H
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PDF
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Voltage Regulator LM78L09 TO-92 package
Abstract: Diode BAY 46 Data LM78L05 TO92 Diode BAY 46 Diode BAY 96 LM78L15 datasheet lm78l05 Diode BAY 19 LM78L18 15Vto25V
Text: Bay Linear Inspire the Linear Power LM78LXX 100mA Positive Voltage Regulator Description Features The Bay Linear LM78LXX is integrated linear positive regulator with three terminals. The LM78LXX offer several fixed output voltages making them useful in wide range of
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LM78LXX
100mA
LM78LXX
100mA
Voltage Regulator LM78L09 TO-92 package
Diode BAY 46 Data
LM78L05 TO92
Diode BAY 46
Diode BAY 96
LM78L15
datasheet lm78l05
Diode BAY 19
LM78L18
15Vto25V
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PDF
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Untitled
Abstract: No abstract text available
Text: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
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Original
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FSYC260D,
FSYC260R
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PDF
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Untitled
Abstract: No abstract text available
Text: Amphenol Amphenol LMD and LMS Modular Connectors TABLE OF CONTENTS Amphenol LMD & LMS Modular Connectors • Table of Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .99 • Introduction - Features, Benefits, Performance. .100 • Features, Options & Contact Data. . . . . . . . . .101
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In-MS-B1-01
MIL-DTL-55302
VME64x
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PDF
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HD74HC148P
Abstract: HD74HC148 HD74HC148FPEL PRDP0016AE-B PRSP0016DH-B octal priority encoder
Text: HD74HC148 8-to-3-line Octal Priority Encoder REJ03D0573-0200 Previous ADE-205-447 Rev.2.00 Oct 11, 2005 Description HD74HC148 encodes eight data lines to three-line (4-2-1) binary (octal). Cascading circuitry (enable input EI and enable output EO) is provided to allow octal expansion without the need for external circuitry. The data inputs and
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HD74HC148
REJ03D0573-0200
ADE-205-447)
HD74HC148
HD74HC148Pijing
HD74HC148P
HD74HC148FPEL
PRDP0016AE-B
PRSP0016DH-B
octal priority encoder
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PDF
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transistor 431A
Abstract: F7478 li-ion battery SERVICE MANUAL polyswitch 20A multi cell liion charger MARK U9A SOT23-6 200 amp battery charger schematic N10 SOT23-6 h a 431a transistor MCP6292
Text: MCP1630 Li-Ion Multi-Bay Battery Charger User’s Guide 2005 Microchip Technology Inc. DS51515A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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Original
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MCP1630
DS51515A
like34-8870
DS51515A-page
transistor 431A
F7478
li-ion battery SERVICE MANUAL
polyswitch 20A
multi cell liion charger
MARK U9A SOT23-6
200 amp battery charger schematic
N10 SOT23-6
h a 431a transistor
MCP6292
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PDF
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Untitled
Abstract: No abstract text available
Text: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC
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Original
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TMJ9910
TMJ9910,
TNJ9910,
BXJ9910,
10kOhm
|
PDF
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Untitled
Abstract: No abstract text available
Text: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC
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Original
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TMJ9910
TMJ9910,
TNJ9910,
BXJ9910,
10kOhm
|
PDF
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Ericsson AB PGR 20312
Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Text: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and
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SE-164
Ericsson AB PGR 20312
DFB ea
InGaAs APD, 10 Gb/s, -30 dBm
20312 pgr
optical supervisory channel
10 gb laser diode
Ea 1530 A
mini link ericsson
Ericsson Power Modules
stm-64 dfb
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PDF
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Diode BAY 46
Abstract: TMJ9910 tangential TNJ9910 SM3 DIODE
Text: ANALOG LEVEL DETECTOR TMJ9910 Available as: TMJ9910, 5 Pin TO-8 T5 TNJ9910, 4 Pin Sq. Surface Mount (SM3) BXJ9910, SMA Connectorized Housing (H6) Features ! ! ! ! -120 mV Output for -10 dBm Input Power ±1.0 dB Flatness Operating Temp. 0 ºC to +50 ºC Environmental Screening Available
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Original
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TMJ9910
TMJ9910,
TNJ9910,
BXJ9910,
Diode BAY 46
TMJ9910
tangential
TNJ9910
SM3 DIODE
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PDF
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WATKINS JOHNSON mixer
Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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Original
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RJH60F0DPQ-A0
R07DS0324EJ0200
PRSS0003ZH-A
O-247A)
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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Original
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RJH60F0DPK
R07DS0234EJ0300
PRSS0004ZE-A
curren9044
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPQ-A0 Silicon N Channel IGBT High Speed Power Switching R07DS0324EJ0100 Rev.1.00 Apr 06, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package
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Original
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RJH60F0DPQ-A0
R07DS0324EJ0100
PRSS0003ZH-A
O-247A)
|
PDF
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PRSS0003ZH-A
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPQ-A0 600 V - 25 A - IGBT High Speed Power Switching R07DS0324EJ0200 Rev.2.00 Jul 22, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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Original
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RJH60F0DPQ-A0
R07DS0324EJ0200
PRSS0003ZH-A
O-247A)
PRSS0003ZH-A
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
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Original
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RJK5014DPP-E0
R07DS0607EJ0100
PRSS0003AG-A
O-220FP)
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PDF
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RJH60
Abstract: RJH60F RJH60F0DPK SC-65 PRSS0004ZE-A R07DS0234EJ0200
Text: Preliminary Datasheet RJH60F0DPK R07DS0234EJ0200 Previous: REJ03G1834-0100 Rev.2.00 Dec 14, 2010 Silicon N Channel IGBT High Speed Power Switching Features • Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
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RJH60F0DPK
R07DS0234EJ0200
REJ03G1834-0100)
PRSS0004ZE-A
Col9044
RJH60
RJH60F
RJH60F0DPK
SC-65
PRSS0004ZE-A
R07DS0234EJ0200
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching R07DS0234EJ0300 Rev.3.00 Mar 30, 2011 Features • Low collector to emitter saturation voltage VCE sat = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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Original
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RJH60F0DPK
R07DS0234EJ0300
PRSS0004ZE-A
|
PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching
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Original
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RJK5014DPP-E0
R07DS0607EJ0100
PRSS0003AG-A
O-220FP)
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PDF
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pelton turbine
Abstract: 5 MVA generator REG316 MVA generator 1 MVA generator ANSI 87T abb mva transformer 100 MVA transformer large generator protection hydro generator
Text: A l l » m i w Selection Guides Generator protection i m r k s o i o io - b e n Page 1 August 1997 Changed since November 1995 Data subject to change without notice ABB Network Partner G e n e ra to r P ro tec tio n Generators are designed to run at a high load
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OCR Scan
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1MRK501
010-BEN
REG316M
REG316
pelton turbine
5 MVA generator
MVA generator
1 MVA generator
ANSI 87T
abb mva transformer
100 MVA transformer
large generator protection
hydro generator
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PDF
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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OCR Scan
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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PDF
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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OCR Scan
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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PDF
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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OCR Scan
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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PDF
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