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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.325  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK5014DPP-E0 R07DS0607EJ0100 PRSS0003AG-A O-220FP)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Features • Low on-resistance RDS on = 0.325  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching


    Original     		PDF RJK5014DPP-E0 R07DS0607EJ0100 PRSS0003AG-A O-220FP)