IRF7311
Abstract: IRF7101 DIODE smd marking 82a
Text: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
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IRF7311
IRF7311
IRF7101
DIODE smd marking 82a
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Untitled
Abstract: No abstract text available
Text: GTLP16612A
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GTLP16612A
18-Bit
GTLP16612A
t3456789012
56-Pin
GTLP16612AA
PS8431
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GTLP16612A
Abstract: GTLP16612AA
Text: GTLP16612A
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GTLP16612A
18-Bit
56-Pin
GTLP16612AA
PS8431
GTLP16612A
GTLP16612AA
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GTLP16612A
Abstract: GTLP16612AA 18bit TTL
Text: GTLP16612A
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GTLP16612A
18-Bit
56-Pin
GTLP16612AA
PS8431
GTLP16612A
GTLP16612AA
18bit TTL
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MC14506
Abstract: MC14506UB "MOTOROLA CMOS LOGIC DATA" db12cb
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14506UB Dual 2-Wide, 2-Input Expandable AND-OR-INVERT L SUFFIX CERAMIC CASE 620 Gate The MC14506UB is an expandable AND–OR–INVERT gate with inhibit and 3–state output. The expand option allows cascading with any other gate,
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MC14506UB
MC14506UB
MC14506UB/D*
MC14506UB/D
MC14506
"MOTOROLA CMOS LOGIC DATA"
db12cb
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diode 244
Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Text: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD
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Q62702-A607
eha07001
DO-35
Q62702-A618
0235bOS
diode 244
diode 243
diode ba 244
BA244S
BA244
BA243
ba 243 rf
DIODE BA243
ba capacitance diode
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DIODE BA243
Abstract: BA243 BA243 diode 0588 JEDEC to 243 diode 244 BA244
Text: A E G CORP 17E QQETMab o o o ' m s D & 2 • BA 243 •BA 244 TjTSLGiiFüfllîiBSIMelectronic Creative Techno'ogres Silicon Planar Diodes A p p lica tio n s: Band selector in VHF-tuners Features: • Low differential forward resistance in VHF-range Low diode capacitance
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BA243
DIODE BA243
BA243 diode
0588
JEDEC to 243
diode 244
BA244
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Untitled
Abstract: No abstract text available
Text: 0 S HI BA LASER/FBR OP T I C G1 J> m ^0*17255 D ü l b l l ö 7 • T O Sb 13 T - 4T -°7 TOSHIBA FOR OPTICAL COMMUNICATIONS Laser Diode Modules for Optical Communications TOLD320 TOLD322 TOLD32Q/322 / Applications Features •Light source for optical subscriber loops
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OLD320
OLD322
OLD32Q
16F-A
AA27235
3908C
87-10-AC
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ba 243 rf
Abstract: BA244 BA243 diode 244 ba capacitance diode ba rf JEDEC to 243
Text: «H» BA 243 •BA 244 'W Silizium-Planar-Dioden Silicon planar diodes Anwendungen: Bereichsumschaltung in VHF-Tunern Applications: Band selector in VHF-tuners Besondere Merkmale: Features: • Niedriger differentieller Durchlaßwiderstand im VHF-Bereich • Low differential forward resistance in
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BA244
Abstract: BA243 diode 243 diode 244 DIODE BA243 BA diode ba 243 rf Q62702-A4
Text: SIEM ENS BA 243 BA 244 Silicon RF Switching Diodes • For VHF band switching in TV tuners • Not for new design Type Marking Ordering Code Pin Configuration BA 243 yellow Q62702-A521 Q62702-A421 BA 244 ¿ Kl 1 Package1 o DO-35 DHD EHA07001 Maximum Ratings
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Q62702-A521
eha07001
DO-35
Q62702-A421
E35bOS
100MHz
BA244
BA243
diode 243
diode 244
DIODE BA243
BA diode
ba 243 rf
Q62702-A4
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BA244
Abstract: BA243 marking S26 sot 23
Text: TELEFUNKEN ELECTRONIC 1?E D • â^200^b 0001715 BA 243 • BA 244 ■¡miUIFiamiiKÌ e le c tro n ic 1 WÊMGG C re ativ e T ec h n o lo g ie s T - 0 7 - / r Silicon Flanar Diodes Applications: Band selector in VHF-tuners Features: • Low differential forward
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BA389 PIN Diode
Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Text: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure
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BA282
BA284
BA389 PIN Diode
ba389
BA284
V/BA389 PIN Diode
BA389 diode
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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BA163
Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Text: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre quency range in short-wave, medium-wave, and long-w ave circu its Type
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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Untitled
Abstract: No abstract text available
Text: TC74ACT240P/F/FW, TC74ACT241P/F/FW, TC74ACT244P/F/FW O C T A L BUS B U F F E R INVERTED, 3-8T A T E OUTPUTS NOW-INVERTED, 3-ST A TE OUTPUTS N O N —I N V E R T E D . 3 - 8 T A T E O U T P U T 8 TC74ACT240P/F/FW TC74ACT241 P / F / F W TC74ACT244P/F/FW The TC74ACT240, 241 and 244 are advanced high speed
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TC74ACT240P/F/FW,
TC74ACT241P/F/FW,
TC74ACT244P/F/FW
TC74ACT240,
74ACT240
TC74ACT241
TC74ACT244
TC74ACT244P/F/
TC74ACT240
TC74ACT241/244
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74AC11544D
Abstract: 74AC11544N 74ACT11544D 74ACT11544N 74ACT11544
Text: Philips Components— Signetics Document No. 853-1500 ECN No. 00731 Date of Issue October 17,1990 Status Product Specification AC L Products • Com bines '245 and '373 type func tions in one chip 8-bit octal transceiver with D-type latch SYMBOL tpuV l PHL
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AC11544
ACT11544
74AC/ACT11544
10MHz
74AC11544D
74AC11544N
74ACT11544D
74ACT11544N
74ACT11544
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st zd 125
Abstract: aj7 mosfet NC2030
Text: PD-91866 International IQR Rectifier • • • • • • IRF7663 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel V dss = -2 0 V R üS (on) = 0.020Q
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IRF7663
PD-91866
st zd 125
aj7 mosfet
NC2030
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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mikroelektronik Heft 12
Abstract: Mikroelektronik Information Applikation information applikation mikroelektronik information applikation applikation heft A302D Kombinat VEB A 902 Kombinat VEB A 281 mikroelektronik Heft VEB mikroelektronik
Text: m a tk a r ^ m ie le l- c te n o n ik Information Applikation Informations- und Applikationshefte „M IK R O E L E K T R O N IK " Bisher erschienen: Heft Heft Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: 8: 9: A 210 und 211 A301 A 290 A202 A 244 und A 281
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Untitled
Abstract: No abstract text available
Text: PD-91844A International ie R Rectifier IRF7210 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount Available in Tape & Reel V Ds s = -12V RüS on = 0.007Q. Description These P-Channel MOSFETs from International Rectifier
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PD-91844A
IRF7210
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philco transistors
Abstract: ECG77 dioda zener 39 ECG779A
Text: PHILIPS E C G INC 17E D S bbSBTSfl 00 034b2 4 T -7 7 -0 7 -0 5 ECG779A TV SIGNAL PROCESS semiconductors v io io in pu t Q ADJ. N C G .t .F . AGC C AGC M f. Q ECG779A 13 a monolithic TV circuit with sync separator, advanced noise Inversion, AGO comparator, and versatile R F AG C
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034b2
ECG779A
ECG779A
D0034b7
D0034bô
27mfr
philco transistors
ECG77
dioda zener 39
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