98E-04
Abstract: No abstract text available
Text: U-LD-98E046D-preliminary UNION OPTRONICS CORP. 980nm Laser Diode 980nm Laser Diode U-LD-98E046D-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-5(ψ9.0mm), With Pb free glass cap, no PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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U-LD-98E046D-preliminary
980nm
98E-04
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785Nm
Abstract: infra red diode 785nm diode PL78T040FC2D-T-0 TO 5.6mm package
Text: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging options for its’ Near Infra Red Series of laser diodes. These units are available in ready-to-use, fibercoupled packages, including FC, ST, and SC receptacles, as well as fiberpigtailed units.
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PL78/83/98
780nm,
830nm
980nm.
200um
pl788398
785Nm
infra red diode
785nm diode
PL78T040FC2D-T-0
TO 5.6mm package
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IR Laser diode
Abstract: No abstract text available
Text: PD Inc LD PL78/83/98 Series Near IR Laser Diode Modules PD-LD Inc. offers a variety of packaging op tions for its’ Near Inf ra Red Series of laser diodes. These units are a vailable in read y-to-use, f ibercoupled pa ckages, including FC, ST, and SC rece ptacles, as well as f iberpigtailed units.
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PL78/83/98
980nm.
200um
pl788398
IR Laser diode
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VRM Section of laptop Motherboard
Abstract: heat sensor with fan cooling working laptop processor socket pin out PGA423 Acoustics Cache Intel Pentium 4 Processors G749 outline of the heat sink for Theta JC laptop motherboard circuits elements 423-pin
Text: Intel Pentium® 4 Processor In the 423-pin Package Thermal Design Guidelines ORDER NUMBER: 249203-001 NOVEMBER, 2000 Pentium® 4 processor in the 423-pin package Thermal Design Guidelines Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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423-pin
VRM Section of laptop Motherboard
heat sensor with fan cooling working
laptop processor socket pin out
PGA423
Acoustics
Cache Intel Pentium 4 Processors
G749
outline of the heat sink for Theta JC
laptop motherboard circuits elements
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Untitled
Abstract: No abstract text available
Text: BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 9.5 7.2 mΩ VGS=4.5 V 13 10 25 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID A · 100% Lead-free; RoHS compliant
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BSZ0907ND
IEC61249-2-21
0907ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet PowerStage 3x3 BSZ0908ND Product Summary Features • Dual N-channel OptiMOS MOSFET Q1 Q2 30 30 V VGS=10 V 18 9 mΩ VGS=4.5 V 25 13 20 30 VDS · Enhancement mode RDS on ,max · Logic level (4.5V rated) · Avalanche rated ID · 100% Lead-free; RoHS compliant
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BSZ0908ND
IEC61249-2-21
0908ND
B6D398
89456789ABC586
864C234C
3F4564%
3FC586
3BF34
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98E580
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y8R5-80E N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y8R5-80E
LFPAK56
98E580
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K8R7-40E Dual N-channel 40 V, 9.4 mΩ logic level MOSFET 10 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK9K8R7-40E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK9Y8R7-60E N-channel 60 V, 8.7 mΩ logic level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9Y8R7-60E
LFPAK56
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c5447
Abstract: No abstract text available
Text: 1234345 SoloLIN Transceiver 6789AB7C5 1 Compatible to LIN Specification Version 1.3 and 2.0 1 Compatible to ISO9141 functions 1 Baud rate up to 20 kBaud 1 Operating voltage VS = 7 to 18 V 1 Low current consumption of typ. 24µA 1 Wake-up via LIN bus traffic
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6789AB7C5
ISO9141
ISO14001
TH8080
c5447
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298348
Abstract: ShineTsu G-749 testing motherboards components using multimeter Diode BAY 451 VRM Section of laptop Motherboard straight flex zif connector G749 circular thermocouple connector automatic room power saving system using PIR hand movement based fan speed control
Text: R Intel Xeon Processor Thermal Design Guidelines May 2001 Order Number: 298348-001 ® Intel Xeon™ Processor Thermal Design Guidelines R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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Untitled
Abstract: No abstract text available
Text: SKHIT 01 R . Absolute Maximum Ratings Symbol Conditions 4% K LM NBO >(9'77 8&J';I<7' 7$'5<?<': 3789%&<8( &'7& H89&%E' <($>& F 8>&$>& AL 7'5Q RBD S$';%&<(E &'@$';%&>;' 0&8;%E' &'@$';%&>;' Characteristics Symbol Conditions TM SEMIDRIVER Thyristor driver for three
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54B65
Abstract: 596B5
Text: MLX90121 13.56MHz RFID Transceiver Features and Benefits 1 1 1 1 Applications 1 Conforms with ISO14443B Conforms with ISO15693 Programmable encoder and decoder Low external component count (1) RATP / Innovatron 1 1 1 1 Portable data terminals Access control readers
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MLX90121
56MHz
ISO14443B
ISO15693
DAA-000
MLX90121EFR-DAA-000-RE
ISO14001
54B65
596B5
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A13H
Abstract: DS41440 B13H a9ah A97h PIC16F1829LIN D98h pic16f1829 SAE J2602 transceiver IR 412H
Text: PIC16F1829LIN 20-Pin, 8-bit Flash LIN/J2602 Microcontroller Cross-Referenced Material: Special Microcontroller Features: This data sheet refers heavily on the following Microchip data sheets: • Self-Programmable under Software Control • Power-on Reset POR , Power-up Timer (PWRT)
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PIC16F1829LIN
20-Pin,
LIN/J2602
PIC16
F1825/1829
DS41440)
MCP2021A/2A,
DS22298)
DS41673A-page
A13H
DS41440
B13H
a9ah
A97h
PIC16F1829LIN
D98h
pic16f1829
SAE J2602 transceiver
IR 412H
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IA64F3048SEC2
Abstract: IA64F3048SEC FFF49 8ch DARLINGTON TRANSISTOR ARRAY DSR 505 innova card PRO NE 226 A21E A22E A23E
Text: IA64F3048SEC2 Security-Enhanced Microcontroller 2.5 V User’s Manual Document Number IA221081001-00 Production Version 00 IA64F3048SEC2 2 Notices NOTE When displayed electronically, this manual best viewed at 120% magnification. September 2008 The information in this manual has been carefully checked and is believed to be accurate; however, Innovasic
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IA64F3048SEC2
IA221081001-00
IA64F3048SEC2
10-bit
IA64F3048SEC
FFF49
8ch DARLINGTON TRANSISTOR ARRAY
DSR 505
innova card PRO
NE 226
A21E
A22E
A23E
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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262E-9
Abstract: No abstract text available
Text: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFG40N10LE,
RFP40N10LE,
RF1S40N10LESM
33e-3
00e-5)
98e-3
38e-6)
262E-9
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75329d
Abstract: TA75329 HUF75329D3
Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75329D3,
HUF75329D3S
TA7532HERM2
98e-2
57e-2
13e-1
26e-2
HUF75329D
80e-3
00e-2
75329d
TA75329
HUF75329D3
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75339p
Abstract: 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3
Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75339G3,
HUF75339P3,
HUF75339S3S
54e-2
98e-1
99e-1
97e-2
HUF75339
00e-3
90e-2
75339p
75339g
TA75339
75339
HUF75339G3
HUF75339P3
HUF75339S3S
HUF75339S3ST
TB334
504E3
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1n813 fairchild
Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei
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BR-BR-0034-58
1n813 fairchild
2N3303
abb inverter manual acs 800
FD6666 diode
2N3137
UA703 equivalent
FD200 diode
2N2369 AVALANCHE PULSE GENERATOR
UA716
Fairchild dtl catalog
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F1S50N06
Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model
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1S50N06,
RFG50N06,
RFP50N06,
RF1S50N06SM
O-247
022S1
RF1S50N06,
RF1S50N06SM
F1S50N06
RFP50N06
N-channel MOSFET to-247 50a
50A60V
tc2516
TA49018
1S50N
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Untitled
Abstract: No abstract text available
Text: RF1K49088 HARRIS S E M I C O N D U C T O R 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 3.5A, 30V The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This
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RF1K49088
RF1K49088
42e-9
1e-30
02e-3
98e-6)
50e-3
70e-6)
53e-3
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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Temic Semiconductors acceleration
Abstract: spindle and VCM motor controller sh ac motor speed control circuit diagram with calcu
Text: AN711 TEMIC S e m i c o n d u c t o r s HDD Servo Design Using the SÌ9990CS Introduction S m all-fo rm factor hard disk drive H D D rotating m em o ries place several d ifficult c o n strain ts on the d esig n ers o f servo m ech an ism s fo r head p o sitio n in g and
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AN711
9990CS
Si9990C
Temic Semiconductors acceleration
spindle and VCM motor controller sh
ac motor speed control circuit diagram with calcu
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