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    DIODE 9.1 B3 Search Results

    DIODE 9.1 B3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 9.1 B3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EE19 bobbin

    Abstract: EPCOS 1000 LNK306PN lnk306pn led driver DER-172 EE19 transformer 1.1 mH with 4 pin vertical lnk30* an-37 lnk306 EE19 vertical 6 pin bobbin YW-047
    Text: Design Example Report 9.1 W LED Driver Buck Converter Using LNK306PN Title Specification 108 VAC – 132 VAC Input, 70 V, 130 mA Output Application LED Arrays Author Applications Engineering Department Document Number DER-172 Date April 28, 2008 Revision 1.4


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    LNK306PN DER-172 EN55022B EE19 bobbin EPCOS 1000 LNK306PN lnk306pn led driver DER-172 EE19 transformer 1.1 mH with 4 pin vertical lnk30* an-37 lnk306 EE19 vertical 6 pin bobbin YW-047 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K PSMN9R1-30YL N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 01 — 12 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PSMN9R1-30YL PDF

    PSMN9R1-30YL

    Abstract: No abstract text available
    Text: LF PA K PSMN9R1-30YL N-channel 9.1 mΩ 30 V TrenchMOS logic level FET in LFPAK Rev. 2 — 16 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


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    PSMN9R1-30YL PSMN9R1-30YL PDF

    mad1108P

    Abstract: RC05 resistor 74HC125 dip RC05 RCO5 RESISTOR RC05 center tap transformer 18 0 18 74HC04 74HC04 NOT GATE datasheet 74HC04 equipment
    Text: LXD332 — Evaluation Board for T1/E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document known as LXD332 — Evaluation Board for T1/E1 Applications. Order Number: 249220-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    LXD332 74HC04 74HC125 LXD332 mad1108P RC05 resistor 74HC125 dip RC05 RCO5 RESISTOR RC05 center tap transformer 18 0 18 74HC04 74HC04 NOT GATE datasheet 74HC04 equipment PDF

    in5333

    Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
    Text: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better


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    D50DE DZD900 1C3016 IN3016 IN3785 IN3821 IN5333 IN3051 IN3B20 IN3830 IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016 PDF

    1c2980

    Abstract: 1C2971 1n4000 DIODE zk 900 194 1C3002 DZD910 1C2973 1C2977 1C2970
    Text: M O T O R O L A SC -CDIODES/OPTO} 3 4 DE I b3t.7aS5 □03011=1 l f 6367255 MOTOROLA SC D IO D E S /O P T O 3^C 38119 SILICON ZENER DIODE DICE (continued) - öS 1C2970 CHIP NO. — SERIES LINE SOURCE — DZD910 Device assembled from this chip type are similar to or


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    DZD910 1C2970 1N2970 1N3015 1N3993 1N4000 1C3993 1C3994 1C3995 1C3996 1c2980 1C2971 1n4000 DIODE zk 900 194 1C3002 DZD910 1C2973 1C2977 1C2970 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC DIODES/OPTO 3^E ]> O b3ti75SS 00 0 3 0 1 =1 S QtlOT? 3EZ3.9D5 thru 3EZ400D5 ELECTRICAL CHARACTERISTICS (Ta =25°C unless otherwise noted) V F = 1.5 V Max, Ip = 200 mA for all types) Nominal Zener Voltage V z lz r Volts (Note 2) Test Current


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    b3ti75SS 3EZ400D5 3EZ10D5 3EZ11D5 PDF

    3EZ10D5

    Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5 3EZ18D5 3EZ400D5
    Text: MOTOROLA SC IME DIODES/OPTO 0 I b3b72S5 oo&Qcm 5 I Order this data sheet by 3EZ3.9D5/D MOTOROLA SEMICONDUCTOR T- / I - J 5“ TECHNICAL DATA 3EZ3.9D 5 thru Designer's Data Sheet 3E Z400D 5 3-Watt Surm etic 30 Silicon Zener Diodes 3-WATT ZENER REGULATOR DIODES


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    b3b72S5 3EZ400D5 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5 3EZ18D5 3EZ400D5 PDF

    B37 zener diode

    Abstract: SOD-18 BZX70 philips zener diode c24 b37 zener philips bzx70 zener diode c43 DIODE BZX70 philips zener diode BZX70-C75 philips zener diode c18
    Text: BZX70 SERIES M A IN TEN A N C E TYPE JiJaE_] PH IL IP S INTERNATIONAL • 711D6Sb QG41b7b b37 M P H I N REGULATOR DIODES A range o f diffused silicon diodes in plastic envelopes, intended fo r use as voltage regulator and transi­ ent suppressor diodes in medium power regulators and transient suppression circuits.


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    BZX70 711065b QG41b7b BZX70-C7V5 BZX70-C75. OD-18. B37 zener diode SOD-18 philips zener diode c24 b37 zener philips bzx70 zener diode c43 DIODE BZX70 philips zener diode BZX70-C75 philips zener diode c18 PDF

    1N4726A

    Abstract: zener diode 1N4726a motorola 1N4740A 1N4733A motorola 1N4726 MOTOROLA 1N4751A Motorola 1N4739A motorola 1N4761A 1N4734A Motorola 1N4730A
    Text: 31E J> MOTOROLA SC DIODES/OPTO B b3b7255 OOâBôlQ 1N4728Athru 1N4764A E3MOT? T-Î1-13 ‘ E L E C T R IC A L C H A R A C T E R IS T IC S (TA = 25°C unless otherwise noted) VF = 1.2 V Max, If = 200 mA for all types. Nominal Zener Voltaqe Maximum Zener Impedance (Note 4)


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    b3b7255 1N4728Athru 1N4764A 1N4726A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A zener diode 1N4726a motorola 1N4740A 1N4733A motorola 1N4726 MOTOROLA 1N4751A Motorola 1N4739A motorola 1N4761A 1N4734A Motorola PDF

    1N4742A 12 volt zener diode

    Abstract: MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33
    Text: riOTOROLA SC D I O D E S / O P T O D b4E • b3b75SS 00fl5L*CH b7S ■ SECTION 4.2.4 DATA SHEETS ZENER VOLTAGE REGULATOR DIODES — continued Section 4.2.4.1 Axial Leaded — continued SECTION 4.2.4.1.2 1-1.3 WATT DO-41 GLASS MULTIPLE PACKAGE QUANTITY (MPQ)


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    b3b75SS DO-41 1N4728A 1N4764A BZX85C3V3 BZX85C100 M-ZPY100 L3b7255 1N4742A 12 volt zener diode MZPY12 MZPY47 BZX85C51 MOT zener diode, t2 diode zener 1n4742a MZPY24 MZPY15 MZPY13 MZPY33 PDF

    dc cdi

    Abstract: CDLL965B 1N962BUR-1 1N986BUR-1 CDLL957B CDLL958B CDLL959B CDLL960B CDLL961B CDLL962B
    Text: COMPENSATED DEVICES INC b3E D • S3G2SS4 DÜGGSG3 443 1N962BUR-1 THRU 1N986BUR-1 AVAILABLE IN J A N , JA N T X A N D JA N T X V ICDI 1N962BUR-1 THRU 1N986BUR-1 AND CDLL957B THRU CDLL986B •ZE N E R DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION


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    1N962BUR-1 1N986BUR-1 23G2554 CDLL957B CDLL986B 200mA: 000QS04 CDLL957 dc cdi CDLL965B CDLL958B CDLL959B CDLL960B CDLL961B CDLL962B PDF

    TMOS E-FET

    Abstract: MTW6N60E
    Text: MOTOROLA SC CXSTRS/R F bfl E ]> • b3b?254 QG^fiflBS GÖ3 « I I O T h M OTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information M TW 6N 60E TMOS E-FET Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-M ode Silicon G ate


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    00A/ns) TMOS E-FET MTW6N60E PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC DIODES/OPTO 3TE T> S3 b3b7ESS 0GÖ3ÖS2 5 E3M0T7 MZP4728A thru MZP4764A, 1M110ZS5 thru 1M200ZS5 E L E C T R IC A L C H A R A C T E R IS T IC S Nominal Zener Voltage (T a = 25°C unless otherwise noted) Vp = 1.5 V Max, lF = 200 mA for all types


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    MZP4728A MZP4764A, 1M110ZS5 1M200ZS5 PDF

    MTW54N05E

    Abstract: Mott diode sc 3467
    Text: MOTOROLA SC XSTRS/R F bfiE D • b3b72S4 OOSflflbl 17S ■MOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TM O S E-FET P ow er Field E ffe c t Transistor M TW 54N 05E M o to ro la P re fe rre d D evice N-Channel Enhancem ent-M ode Silicon G ate


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    b3b7254 MTW54N05E Mott diode sc 3467 PDF

    sc 1365

    Abstract: 713 OPTO 1C962BHV 1C964BHV 1C973BHV 1C900 motorola 409
    Text: MOTOROLA SC D I O D E S / O P T O 3^E D Ei b3k?2SS QQÖ2SHB R E3MOT 7 -r- ii- o r MOTOROLA SEMICONDUCTORi . .jljl. •- TECHNICAL DATA 1C746A-759AH V 1C962B-9928HV 1C4370A-4372AHV Processed per MIL-S-19500/127 Discrete Military Operation Silicon Zener Diode Chips


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    1C746A-759AH 1C962B-9928HV 1C4370A-4372AH MIL-S-19500/127 175-TA 1C988BHV 1C989BHV 1C990BHV 1C991BHV 1C992BHV sc 1365 713 OPTO 1C962BHV 1C964BHV 1C973BHV 1C900 motorola 409 PDF

    motorola ZENER diode marking code

    Abstract: No abstract text available
    Text: M O T OR OLA SC IME D | b3fc725S G o a o t m DI ODE S/ OP TO 5 I Order this data sheet by 3EZ3.9D5/D MOTOROLA SEM ICONDUCTOR T-ÍI-J5" TECHNICAL DATA 3EZ3.9D 5 thru Designer's Data Sheet 3EZ400D 5 3-Watt Surm etic 30 Silico n Zener Diodes 3-WATT ZENER REGULATOR


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    b3fc725S 3EZ400D MLL34. MLL41 OT-23 RS461 motorola ZENER diode marking code PDF

    Zener diode 1n714

    Abstract: 1N758A motorola 1N5837 1N5240 1N714 1N4740 1n4740 MOTOROLA 1C5230 zener diode 1N961 1N5985A
    Text: 34 M O T O R O L A SC -CDIODES/OPTOJ 6367255 MOTOROLA SC »F|b3b7ESS 0030125 Q 34 c D IO D E S /O P TO 38125 7~' J j - O S SILICON ZENER DIODE DICE (continued) 1C5221 DIE NO. — SERIES LINE SOURCE — DZD300 This die provides performance equal to or better than that


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    DZD300 1N702 1N714 1N746A 1N758A 1N761A 1N769 1N957 1N961 1N4099 Zener diode 1n714 1N758A motorola 1N5837 1N5240 1N4740 1n4740 MOTOROLA 1C5230 zener diode 1N961 1N5985A PDF

    1n53338

    Abstract: 1N53348
    Text: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­


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    00fl3flEM 1N53338 1N5388B 1n53338 1N53348 PDF

    Diode Marking ZM Motorola

    Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
    Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


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    1SMB5913A/D 1SMB5913A, 1SMB5956A, 1SMB5913A 241Sb C6459& Diode Marking ZM Motorola DIODE MOTOROLA 39A ZENER 18-2 5t PDF

    transistor motorola 2n2646

    Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
    Text: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:


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    b3b7S55 2N2646 2N2647 2A-01 transistor motorola 2n2646 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646 PDF

    1N53888

    Abstract: Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B
    Text: MOTOROLA SC D I O D E S / O P T O 3TE D El b3L72S S 00Ö3ÖEM E3MOT7 MOTOROLA SEMICONDUCTOR c TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­


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    b3L72SS E3I10T7 1N53888 Zener diode wz 130 1n53338 LR Amps Zener diode wz 210 Zener diode WZ 340 1N5358B motorola Zener diode wz 230 Zener diode wz 280 1N5333B PDF

    mu4891

    Abstract: MU4893 mu4894
    Text: MOTOROLA SC DIODES/OPTO I 3<iE I> El b3b?2SS Ü0fl2'i0'î 1 BBF10T7 NOT RECOM M ENDED FO R NEW D ESIG N S I MU4891 thru MU4894 PN Unijunction Transistors Silicon Plastic Unijunction Transistors . . designed for m i l i t a r y and industrial use in pulse, timing, triggering, sensing,


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    BBF10T7 U4893 U4892 MU4891 MU4891 MU4894 MU4893 mu4894 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 3 6 7 2 54 MOTOROLA SC 96D 8 1 4 7 5 CXSTRS/R F — Tb M OTOROLA DE|b3Li7554 D D0S147S fl Order this data sheet b y MJ25BX100/D | S E M IC O N D U C T O R TECHNICAL DATA M J25BX100 NPN Silicon Power Transistor Module Energy M an age m e n t Series DUAL


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    b3Li7554 D0S147S MJ25BX100/D J25BX100 MK145BP, MJ25BX100 C52271 PDF