Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings
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IXFP12N50PM
300ns
O-220
12N50P
4-14-08-D
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions VDSS
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
O-220AB
6N120P
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PDF
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IXFA6N120P
Abstract: IXFH6N120P IXFH6N120 IXFP6N120P
Text: Preliminary Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.75Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions
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Original
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
O-220AB
O-247
6N120P
IXFH6N120P
IXFH6N120
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PDF
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HiperFET
Abstract: MOSFET 1200v 3a IXFA6N120P
Text: Advance Technical Information IXFA6N120P IXFP6N120P IXFH6N120P PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = 1200V = 6A ≤ 2.4Ω Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions
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Original
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
O-220AB
6N120P
HiperFET
MOSFET 1200v 3a
IXFA6N120P
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PDF
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IXTP12N50PM
Abstract: 12n50p d1518
Text: PolarTM Power MOSFET IXTP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings
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Original
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IXTP12N50PM
300ns
O-220
12N50P
4-14-08-D
IXTP12N50PM
d1518
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFA6N120P IXFP6N120P IXFH6N120P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 6A Ω ≤ 2.75Ω RDS on TO-263 AA (IXFA) G S D (Tab) Symbol Test Conditions
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Original
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IXFA6N120P
IXFP6N120P
IXFH6N120P
O-263
6N120P
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PDF
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IXTP12N50PM
Abstract: No abstract text available
Text: PolarTM Power MOSFET VDSS ID25 IXTP12N50PM RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings
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Original
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IXTP12N50PM
300ns
O-220
12N50P
4-14-08-D
IXTP12N50PM
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PDF
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IXFP12N50PM
Abstract: T12N50 IXFP12N50 12n50 41408
Text: PolarTM Power MOSFET HiPerFETTM IXFP12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) trr = 500V = 6A Ω ≤ 500mΩ ≤ 300ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED TO-220 (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings
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Original
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IXFP12N50PM
300ns
O-220
12N50P
4-14-08-D
IXFP12N50PM
T12N50
IXFP12N50
12n50
41408
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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IXTT6N150
Abstract: No abstract text available
Text: IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTT6N150
IXTH6N150
O-268
O-247
6N150
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PDF
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Untitled
Abstract: No abstract text available
Text: High Voltage Power MOSFETs VDSS ID25 IXTT6N150 IXTH6N150 1500V 6A 3.5Ω RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTT6N150
IXTH6N150
O-268
6N150
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PDF
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IXTH6N150
Abstract: 6n150
Text: Advance Technical Information IXTH6N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 6A 3.5Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH6N150
O-247
6N150
IXTH6N150
6n150
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PDF
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AO4482L
Abstract: ao4482
Text: AO4482L 100V N-Channel MOSFET General Description Product Summary The AO4482L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,
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AO4482L
AO4482L
ao4482
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Untitled
Abstract: No abstract text available
Text: SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK o 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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SFW/I9520
-100V
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: AO4482 100V N-Channel MOSFET General Description Product Summary The AO4482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for boost converters and synchronous rectifiers for consumer,
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AO4482
AO4482
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PDF
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Untitled
Abstract: No abstract text available
Text: Green Product STD12L01 S a mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 100V 12A 145 @ VGS=10V G D Rugged and reliable.
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STD12L01
O-251
-Pul00
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT6N10Z Power MOSFET 100V, 6A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6N10Z is an N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low
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UTT6N10Z
UTT6N10Z
OT-223
UTT6N10ZL-AA3-R
UTT6N10ZG-AA3-R
QW-R502-921,
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PDF
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SFP9520
Abstract: No abstract text available
Text: SFP9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge o 175 C Opereting Temperature TO-220 Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -100V
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SFP9520
O-220
-100V
SFP9520
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PDF
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Untitled
Abstract: No abstract text available
Text: SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK o 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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SFW/I9520
-100V
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PDF
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2E12
Abstract: 2N7309D 2N7309H 2N7309R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9130 D, R, H 2N7309D, 2N7309R 2N7309H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 6A, -100V, RDS(on) = 0.565Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRS9130
2N7309D,
2N7309R
2N7309H
-100V,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
2N7309D
2N7309H
2N7309R
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PDF
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2E12
Abstract: 2N7307D 2N7307H 2N7307R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 6A, -100V, RDS(on) = 0.550Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM9130
2N7307D,
2N7307R
2N7307H
-100V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
2N7307D
2N7307H
2N7307R
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PDF
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Untitled
Abstract: No abstract text available
Text: SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS on = 0.6 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK o 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
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Original
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-100V
SFW/I9520
SFW9520TM
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: SFW/I9520 A dvanced Power MOSEET FEATURES B ^D S S • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10|iA M ax. @ VDS = -100V
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-100V
SFW/I9520
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PDF
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sfr 135
Abstract: TA 8269 H diode SFR-135
Text: SFR/U9120 Advanced Power MOSFET FEATURES BVdss = -100 V • Avalanche Rugged Technology = 0.6 £2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = -4.9 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V
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OCR Scan
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SFR/U9120
-100V
sfr 135
TA 8269 H
diode SFR-135
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PDF
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