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    12N50 Search Results

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    12N50 Price and Stock

    Vishay Siliconix SIHP12N50E-GE3

    MOSFET N-CH 500V 10.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP12N50E-GE3 Tube 1,000 1
    • 1 $1.79
    • 10 $1.79
    • 100 $1.1817
    • 1000 $0.8484
    • 10000 $0.75
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    Cal-Chip Electronics CHV1812N500270JCT

    HVCAP1812 COG 27PF 5% 500V
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    DigiKey CHV1812N500270JCT Reel 1,000 1,000
    • 1 -
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    • 100 -
    • 1000 $0.606
    • 10000 $0.5252
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    Cal-Chip Electronics CHV1812N500223KXT

    HVCAP1812 X7R .022UF 10% 500V
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    DigiKey CHV1812N500223KXT Reel 1,000 1,000
    • 1 -
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    • 100 -
    • 1000 $0.3369
    • 10000 $0.28799
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    Cal-Chip Electronics CHV1812N500104MXT

    HVCAP1812 X7R .1UF 20% 500V
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    DigiKey CHV1812N500104MXT Cut Tape 980 1
    • 1 $0.81
    • 10 $0.564
    • 100 $0.3869
    • 1000 $0.3224
    • 10000 $0.3224
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    STMicroelectronics STF12N50M2

    MOSFET N-CH 500V 10A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF12N50M2 Tube 472 1
    • 1 $1.59
    • 10 $1.59
    • 100 $1.0543
    • 1000 $0.75691
    • 10000 $0.66913
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    Avnet Americas STF12N50M2 Tube 16 Weeks 1,000
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    • 1000 $0.79492
    • 10000 $0.71463
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    STF12N50M2 Bulk 15 Weeks, 6 Days 1
    • 1 $1.88
    • 10 $1.6
    • 100 $1.3
    • 1000 $0.962
    • 10000 $0.962
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    TME STF12N50M2 1
    • 1 $1.37
    • 10 $1.24
    • 100 $1.09
    • 1000 $0.85
    • 10000 $0.81
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    ComSIT USA STF12N50M2 1,000
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    Find more 12N50 price and stock on Findchips.com

    12N50 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    12N-50 Inmet ATTENUATOR Scan PDF
    12N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50C1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50C1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50E1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50E1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N-50F Inmet ATTENUATOR Scan PDF
    12N-50M Inmet ATTENUATOR Scan PDF
    12N50W-03 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-03F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-03M Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-06 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-06F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-06M Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-10 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-10F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-20 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-20F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-30 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-30F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF

    12N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


    Original     		PDF 12N50 12N50 QW-R502-528

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 12N50P 12N50P O-263 O-220

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    12n50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 12N50 12N50 QW-R502-528

    IXTP12N50PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 6 ≤ 0.5 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original     		PDF 12N50PM O-220 405B2 IXTP12N50PM

    12N50P

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500


    Original     		PDF 12N50P 12N50P O-263 O-263 O-220 O-220)

    MOSFET IXYS TO-263

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 RDS on = 500 V = 12 A Ω = 500 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 12N50P 12N50P O-220 O-263 405B2 MOSFET IXYS TO-263

    12N50P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V


    Original     		PDF 12N50P 12N50P

    12n50

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original     		PDF 12N5001 12n50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original     		PDF 12N5001

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original     		PDF 12N5001

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original     		PDF 12N5001

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original     		PDF 12N5001/S35A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N50 Preliminary Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original     		PDF 12N50 12N50 QW-R502-528

    12n50

    Abstract: No abstract text available
    Text: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 12N50P O-220 12n50

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original     		PDF 12N5001

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A SmartReflect Light barriers dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type light barrier light source pulsed red LED background position Sde 20 . 80 mm


    Original     		PDF 12N5001/S35A

    2N508B

    Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
    Text: 2N5088 / MMBT5088 12N50891 MMBT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 MMBT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.


    OCR Scan     		PDF 2N5088 2N5089 MMBT5088 MMBT5089 2N5089 b5D1130 2N508B 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR MMBT5089 T092 LS5911