skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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1SMB3EZ11
Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
Text: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction
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1SMB3EZ11
1SMB3EZ200
DO-214AA
DO-214AA,
MIL-STD-750,
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ15
1SMB3EZ200
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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338 zener
Abstract: diode zener ZL 7 ZENER DIODES DZ 6.28 diode zener ZL 8 15B zener diode udz diode
Text: I 2-pin Mini-mold Zener Diode UDZS Series l External dimensions Units: mm @Application Constant voltage control CA1 tiODF MAI<K @Features I1 l)Extremely compact 2-pin mrnr-mold type for highdensity mounting (UMD2 (USM) ). 2)Due to a wireless structure surge proof
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OD-323)
338 zener
diode zener ZL 7
ZENER DIODES DZ 6.28
diode zener ZL 8
15B zener diode
udz diode
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zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20
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500mW
DODO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
zener zp 278
Zener Diode minimelf
Zener diode wz 162
krc 118 056
diode 918b
zener diode 182
KD6 Z7
ZENER DIODE 18-2
diode 368b
h25b
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FLUKE 43 manual
Abstract: FLUKE 43B PM9080 PM9087 fluke bp120 epson printer pm 235 deskjet printer troubleshoot guide FLUKE 43b manual c789 BB120
Text: Fluke 43B Power Quality Analyzer Maintain power systems, troubleshoot power problems, diagnose equipment failures The Fluke 43 Power Quality Analyzer performs the measurements you need to maintain power systems, troubleshoot power problems and diagnose equipment failures. All in a rugged
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mos43B
36-FLUKE
FLUKE 43 manual
FLUKE 43B
PM9080
PM9087
fluke bp120
epson printer pm 235
deskjet printer troubleshoot guide
FLUKE 43b manual
c789
BB120
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Untitled
Abstract: No abstract text available
Text: DISC T Y P E DIODE SDF4000BA SD F4000BA rectification. is a Flat Pack Diode designed for high power • If av>— 4000A, Vrrm— 1200V • High Reliability by pressure mount construction. (Applications • High Power Rectifier • Welding Power Supply • Maximum Ratings
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SDF4000BA
F4000BA
SDF4000BA80
SDF4000BA100
SDF4000BA120
B-171
D00233Q
B-172
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S370
Abstract: No abstract text available
Text: VISIB LE LIG HT PRODUCTS Super Bluish-Green Light Emitting Diode REV:B DATE:2006/8/30 iDEVICE NO:HMIB-43B/TR7 " LENS COLOR: colored diffusion colored transparent white diffusion water clear iPACKAGE DIMENSIONS: 2.25 1.1 0.83 m 2 .^ 5 ^ cathode stripe 3.Tolerance is 0.3mm unless otherwise
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HMIB-43B/TR7
S370
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zener 27b
Abstract: 27B zener diode 22b zener diode 43B MARKING 20B zener diode zener diode 33B
Text: Diodes Zener Diode for Constant Voltage Control UDZ Series •Features •External dimensions Units: mm 1)Extremely compact, 2-pin mini-mold type for highdensity mounting (UMD2) 2)High reliability 3)Can be mounted automatically, using chip mounter CATHODE MARK
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OD-323)
zener 27b
27B zener diode
22b zener diode
43B MARKING
20B zener diode
zener diode 33B
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b698 transistor
Abstract: B698 30PF DS3893A DS3893AV V20A
Text: DS3893A £3i National Semiconductor ü DS3893A BTL TURBOTRANSCEIVER General Description The bus driver is an open collector NPN with a Schottky diode in series to isolate the transistor output capacitance from the bus when the driver is in the inactive state. The
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DS3893A
TL/F/B698-10
TL/F/8698-11
DQ70M20
b698 transistor
B698
30PF
DS3893AV
V20A
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GV 475 diode
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ200 zener Diode 19B H 48 zener diode
Text: TRANSYS ELECTRONICS LIMITED 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 W atts FEATURES For surface mounted app cations in order to DO-214AA optimize board space MODIFIED J-BEND Low prof e package Built-in strain re ef
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1SMB3EZ11
1SMB3EZ200
0J/10
DO-214AA,
MIL-STD-750,
GV 475 diode
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ200
zener Diode 19B
H 48 zener diode
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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10DF1
Abstract: 10DF2 n439
Text: FAST RECOVERY DIODE 1.1A/100— 200V/trr : 200nsec 10DF1 10DF2 FEATURES ° Miniature Size 2.71.106 DIA 2.3 .091) -GO ° Super Fast Recovery » Low Forward Voltage Drop 0.9(.035) n r * 0.7Î.027) o Low Power Loss, High Efficiency 27(1.06) MIN ° High Surge Capability
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A/100--
00V/trr
200nsec
10DF1
10DF2
10DF1
10DF2
n439
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43B diode
Abstract: Q002 FCH10A04 S7045 g3il
Text: SCHOTTKY BARRIER DIODE FCH10A04 i o a /4q v FEATU RES o Similar to T0-220AB Case OFully Molded Isolation ODual Diodes-Cathode Common OLow Foward Voltage Drop oL ow Power Loss, High Efficiency o High Surge Capability OTj = 150°C operation Approx. N et W eight: 1.75 Grams
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fch10a04
O-220AB
S7045Ã
IU61IMAX
FCH10A-.
bbl51E3
Q00203Q
43B diode
Q002
FCH10A04
S7045
g3il
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Untitled
Abstract: No abstract text available
Text: ICX039BLA SONY. 1/2 inch CCD Image Sensor for CCIR B/W Camera Description Package Outline ICX039BLA is an interline transfer CCD solid-state imager suitable for CCIR 1/2 inch B/W video cameras. High sensitiveness is achieved through the adoption of HAD Hole-Accumulation Diode sensors.
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ICX039BLA
ICX039BLA
ICX039ALA)
1/50s.
1/100s.
1/10000s.
000fc
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D403 power transistor
Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Text: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.
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2SB1344
2SD2025
2SB1344
2SD2025.
300kQ
100ms
O-220FP
O-220
O-126
O-220,
D403 power transistor
D403 transistor
TRANSISTOR D403
D403 A
100V 2A MPT3
2SD2025
D403
SC-75A
2305 transistor
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE F C H1 0 A 0 4 1 0A /4 0V FEATU RES o Similar to TO-220AB Case OFully Molded Isolation ODual Diodes-Cathode Common OLow Foward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability OTj = 150°C operation Approx. Net Weight : 1.75 Grams
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O-220AB
FCH10A04
Q002030
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10EF1
Abstract: 10EF2
Text: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability
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lA/100
00V/trr
200nsec
10EF1
10EF2
10EF1
cond10
D0D2142
10EF2
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ic lm324
Abstract: laser APC CIRCUIT APC 1500 CIRCUIT DIAGRAM 16G075-2X 16G075-2L1 LM324 Gigabit Logic DIODE in s2v 16G075-2L1E 16G075-3L1
Text: IGBL I G i g a B i t L o g ic 16G075 Laser Diode Driver 3 Gbit/s NRZ Data Rate FEATURES High speed operation 2Gbps, 3 Gbps NRZ Differential ECL com patible interface Single power supply (-5.2V) 25 to 50 mA p-p modulation current 0 to 40 mA bias current Maximum bias current preset control
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16G075
16G075
LM324
ic lm324
laser APC CIRCUIT
APC 1500 CIRCUIT DIAGRAM
16G075-2X
16G075-2L1
Gigabit Logic
DIODE in s2v
16G075-2L1E
16G075-3L1
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1016S
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l DlO d& P O W -R -B L O K M o d u le 600 Amperes/2400 Volts Description: OUTLINE DRAWING M lO T H D M 10TH D M10THD '.I TT • n LD41_ _60 Dual Diode POW-R-BLOK™ Module
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Amperes/2400
M10THD
tai00
1016S
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F6P20F
Abstract: F6P10F C6P20F C6P10F 3a ultra fast diode
Text: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100— 2 0 0 V /trr : 30nsec 3.K.122 M AX FEATURES ° S i m i l a r to T 0 - 2 2 0 A B Ca se °Ful l y Mold Isolation 10.3 .405) P MAX •.81.189] MAX, w (F-Type) 6.9(.272) 6.3(.248) i 0 Dual Diodes - Cathode Common
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A/100â
00V/trr
30nsec
C6P10F
C6P20F
F6P10F
F6P20F
T0-220AB
16UMAX
C6P10F
F6P20F
3a ultra fast diode
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MUR1560R
Abstract: RUR1550 RUR1560 UR1550 MUR1550
Text: H SbE D • A R R M U R 1540 M UR1550 M UR1560 IS IHAS 4 3 G 2 27 1 D G M 2 3 5 3 STT R U R 1540 RUR1550 RUR1560 ‘15A Ultrafast Diode With Soft Recovery Characteristic M ay 1991 HA RR IS S E I H C O N D SE CT OR re a iu re s X 'O P ackage -ò -n TO-220AC
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UR1550
UR1560
RUR1550
RUR1560
O-220AC
MUR1540,
MUR1550,
MUR1560
RUR1540,
RUR1550,
MUR1560R
RUR1560
MUR1550
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Untitled
Abstract: No abstract text available
Text: baHTfiS? bBE QG1SB30 bb3 • P I I T 3 M I T S U B IS H I M ITSU B ISH I BIPOLAR DIGITAL ICs M 54661P CD6TL L O G IC 4 -U N IT HIGH VOLTAGE 1.5A DARLINGTON T R A N S IS T O R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW) T h e M 5 4 6 6 1 P , 4 -c h a n n e l sink driver, consists of 4 P N P and
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QG1SB30
54661P
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Untitled
Abstract: No abstract text available
Text: SIE D • fllBbb71 0DG3S74 43b « S E K G s e MIKRD n SEMIKRÖN INC I Absolute Maximum Ratings Symbol V ds V dgr Id Id m V gs Pd Tji Tstg Visol humidity climate Conditions ' R g s = 20 k i l AC, 1 min, 200 |iA DIN 40 040 DIN IEC 68 T.1 Units ; Values 100 100
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fllBbb71
0DG3S74
111AR
SKM111
fll3bb71
DGQ357b
0QQ3577
T-39-15
B6-10
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