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    Cornell Dubilier Electronics Inc MCM01-010EF201J-F

    CAP MICA 200PF 5% 1KV SMD
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    DigiKey MCM01-010EF201J-F Bulk
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    Cornell Dubilier Electronics Inc MCM01-010EF271J-F

    Mica Capacitors 270pF 1kV 5%
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    Mouser Electronics MCM01-010EF271J-F
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    Cornell Dubilier Electronics Inc MCM01-010EF241J-F

    Rf/Microwave Capacitor, 240Pf, 1000V 5%; Capacitance:240Pf; Voltage Rating:1Kv; Product Range:Mcm Series; Capacitance Tolerance:± 5%; Operating Temperature Max:200°C; Capacitor Case Style:-; Automotive Qualification Standard:- Rohs Compliant: Yes |Cornell Dubilier MCM01-010EF241J-F
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    Newark MCM01-010EF241J-F Bulk 200
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    HT Micron Semiconductors MT4LSDT864HG-10EF2

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    Bristol Electronics MT4LSDT864HG-10EF2 20
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    Micron Technology Inc MT4LSDT864HG-10EF2

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    Bristol Electronics MT4LSDT864HG-10EF2 15
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    10EF2 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10EF2 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    10EF2 Nihon Inter Electronics Fast Recovery Diode Scan PDF
    10EF2 Nihon Inter Electronics FAST RECOVERY DIODE Scan PDF

    10EF2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PC133 registered reference design

    Abstract: micron dram code 10EB2
    Text: PRELIMINARY‡ 256MB, 512MB x72 184 Pin REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT18VDDT3272G, MT18VDDT6472G For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • • • • • • • • • • •


    Original     		256MB, 512MB 184-pin, 256MB MT16VR25616AG MT16VR25618AG MT16VR25618AG-840A1 PC133 registered reference design micron dram code 10EB2 PDF

    PC133 registered reference design

    Abstract: 10EB2
    Text: 4, 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT4LSDT464A, MT4LSDT864A MT4LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant


    Original     		PC66-* PC100- PC133-compliant 168-pin, 128MB 096-cycle MT16VR25616AG 512MB MT16VR25618AG MT16VR25618AG-840A1 PC133 registered reference design 10EB2 PDF

    DS1849

    Abstract: 0118-B PC133 registered reference design 662C MT8LSDT 10EF1
    Text: ADVANCE 16, 32 MEG x 72 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSDT1672A, MT18LSDT3272A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC133- and PC100-compliant


    Original     		PC133- PC100-compliant 168-pin, 128MB 256MB 096-cycle MT8VR12818AG 512MB MT16VR25616AG DS1849 0118-B PC133 registered reference design 662C MT8LSDT 10EF1 PDF

    0118-B

    Abstract: MT8L PC133 registered reference design 10EF1 2Q01
    Text: PRELIMINARY 128MB / 256MB x64 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT1664A - 128MB MT16LSDT3264A - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View) • PC100- and PC133-compliant


    Original     		128MB 256MB 168-PIN PC100- PC133-compliant 168-pin, 128MB 096-cycle Pres18 0118-B MT8L PC133 registered reference design 10EF1 2Q01 PDF

    10DBAG5

    Abstract: kfs4300 FN322-1 LGA1A-2 03GENG3E-R FN363 03EB3 FN670 LGA1A-10 FN323-6-05
    Text: EMI FILTER PRODUCTS C r os s R efer enc e G ui de Qualtek Part Number 858-01/081 858-01/003 858-03/007 858-01/003 858-01/003 858-03/007 857-01/046 860-02/001 854-02/001 854-02/002 854-02/001 854-02/002 851-03/003 851-03/003 854-02/001 854-02/002 853-02/001


    Original     		KFS4300 KFX4300 ISO-9001 10DBAG5 FN322-1 LGA1A-2 03GENG3E-R FN363 03EB3 FN670 LGA1A-10 FN323-6-05 PDF

    0118-B

    Abstract: 0118B MT8LSDT3264HG PC133 registered reference design MT8LSDT MARKING CL3 10EF1 simm 256mb
    Text: ADVANCE 16, 32 MEG x 64 SDRAM DIMMs MT8LSDT1664A, MT16LSDT3264A SYNCHRONOUS DRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View • PC133- and PC100-compliant


    Original     		PC133- PC100-compliant 168-pin, 128MB 256MB 096-cycle MT8LSDT1664A, MT8VR12818AG 512MB MT16VR25616AG 0118-B 0118B MT8LSDT3264HG PC133 registered reference design MT8LSDT MARKING CL3 10EF1 simm 256mb PDF

    PC133 registered reference design

    Abstract: No abstract text available
    Text: 4, 8, 16 MEG x 72 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT5LSDT472A, MT5LSDT872A, MT5LSDT1672A For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-*, PC100- and PC133-compliant


    Original     		PC66-* PC100- PC133-compliant 168-pin, 128MB 096-cycle MT8VR12818AG 512MB MT16VR25616AG PC133 registered reference design PDF

    PC133 registered reference design

    Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
    Text: PRELIMINARY 512MB / 1GB x72, ECC 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE MT36LSDF6472G - 512MB MT36LSDF12872G - 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View)


    Original     		512MB 168-PIN 168-pin, PC100 PC133 512MB MT8VR12818AG MT16VR25616AG PC133 registered reference design 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2 PDF

    0118-B

    Abstract: MT8LSDT3264HG PC133 registered reference design 1700B DDR DIMM pinout micron
    Text: ADVANCE 8, 16 MEG x 72 REGISTERED SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSDT872, MT9LSDT1672 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM


    Original     		168-pin, PC133- PC100-compliant 128MB MT8VR12818AG 512MB MT16VR25616AG MT16VR25618AG MT16VR25618AG-840A1 0118-B MT8LSDT3264HG PC133 registered reference design 1700B DDR DIMM pinout micron PDF

    EQUIVALENT BYD33D

    Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
    Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and


    Original     		PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent PDF

    PC133 registered reference design

    Abstract: MT9V
    Text: ADVANCE 32, 64 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT3272DG, MT18LSDT6472DG For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM


    Original     		168-pin, PC133- PC100-compliant 256MB 512MB 64m18 MT8VR12818AG MT16VR25616AG PC133 registered reference design MT9V PDF

    10M80

    Abstract: 10MA80 10M60 10M40 10M15 10EF2 1s785 10V-200 10ELS2 10ELS4
    Text: - 38- A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


    OCR Scan     		10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M80 10MA80 10M60 10M40 10M15 10EF2 1s785 10V-200 PDF

    10M15

    Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


    OCR Scan     		10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10EF2 10KF10 10KF10B 10KF20 10KF20B PDF

    10M15

    Abstract: 10EF2 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


    OCR Scan     		10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10EF2 10KF10 10KF10B 10KF20 10KF20B PDF

    10EF2

    Abstract: 10M15 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B 10KF20 10KF20B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


    OCR Scan     		10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10EF2 10M15 10KF10 10KF10B 10KF20 10KF20B PDF

    Untitled

    Abstract: No abstract text available
    Text: 10EF1 10EF2 l.lA /1 0 0 ~ 2 0 0 V /tr r : 200nsec FAST RECOVERY DIODE FEATURES ° Miniature Size 2.7 .106 MAX DIA * Super Fast Recovery o Low Forward Voltage Drop 0.7(.027) DIA 0.5(.020) o Low Power Loss, High Efficiency 2 7 ( 1 .0 6 ) MIN ° High Surge Capability


    OCR Scan     		10EF1 10EF2 200nsec 7C027) 10EF1 bbl51E3 0Q02141 PDF

    10EF1

    Abstract: S 437 Diode 10EF2
    Text: FAST RECOVERY DIODE 1.1A /100— 2 0 0 V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability ° 2 6mm and 52mm Inside Tape Spacing Package Available


    OCR Scan     		200nsec 10EF1 10EF2 10EF1 S 437 Diode 10EF2 PDF

    10M15

    Abstract: 10MA80 10ELS4 10EF2 10MA120 10M10 10ELS1 10ELS2 11DF2 10KF10
    Text: - 38A ffi 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6 ÌQKFIO ÍOKFIOB 10KF20 10KF20B 10KF30 10KF30B 10KF40 10KF40B ÍOMIO 10M15 10M20 10M30 10M40 10M50 10M60 10M80 ÎOMIOO 10MA10 10MA20 10MA30 10MA40 10MA60 ÎOMASO ÎOMAIOO 10MA120 10MA140 10MA160 10U4 1ÛU8 1 OU12


    OCR Scan     		10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10MA80 10EF2 10MA120 10M10 11DF2 10KF10 PDF

    10M15

    Abstract: 10EF2 1S783 10MA80 10ELS1 10ELS2 10ELS4 10ELS6 10KF10 10KF10B
    Text: - 38 - A m 1& £ [Si # is m & æ |SJ # tt * ffi £ £ Vr sm Vr r m Vr IFH Tfc# V (V) (V) (A) (°C) I o,I f * (A) CC> IFSM T & f * Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi (ü A) V r (V) T(°C) 10EF2 ÎOELSI 10ELS2 10ELS4 10ELS6


    OCR Scan     		10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M15 10EF2 1S783 10MA80 10KF10 10KF10B PDF

    10EF1

    Abstract: 10EF2
    Text: FAST RECOVERY DIODE l.lA /10 0~ 20 0V /trr : 200nsec 10EF1 10EF2 FEATURES ° Miniature Size 2.7 .106 nlA M A X U1A « Super Fast Recovery o Low Forward Voltage Drop 0.7(.027)DIA 0.5(.020) •>Low Power Loss, High Efficiency 2 7 ( 1.0 6 ) ' M IN ° High Surge Capability


    OCR Scan     		lA/100 00V/trr 200nsec 10EF1 10EF2 10EF1 cond10 D0D2142 10EF2 PDF

    30D106

    Abstract: No abstract text available
    Text: Type30D +105C General Purpose Miniature Axial Lead, Aluminum Capacitors Features — +105°C, Long Life, High Performance High CV Per Case Size Case Sizes to 18mm Diameters General Specifications — Operating Temperature: -40°C - +105°C. Voltage Range: 3 - 250VDC.


    OCR Scan     		Type30D 250VDC. 000jj 50VDC 25VDC 30D106 PDF

    30KF60B

    Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
    Text: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166


    OCR Scan     		1N4001 1N4002 1N4004 1N4005 1N4006 1N4007 2VF10CT F20CT F30CT F40CT 30KF60B 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" PDF

    10EF2

    Abstract: 10EF1
    Text: FAST RECOVERY DIODE l .lA / 1 0 0 ~ 2 0 0 V / t r r : 200nsec 1 0 E F 1 10 EF2 FEATURES ° Miniature Size ° Super Fast Recovery ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability » 26mm and 52mm Inside Tape Spacing Package Available


    OCR Scan     		lA/100 00V/trr 200nsec 10EF1 10EF2 10EF1 0D15G7 10EF2 PDF