Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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TS16949
AECQ101
2002/95/EC
DO-214AA,
2012-REV
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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PDF
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TS16949
AEC-Q101
2011/65/EU
IEC61249
2012-REV
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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PDF
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DO-214AA,
MIL-STD-750,
2002/95/EC
2012-REV
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marking 43b
Abstract: E1A-481
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
marking 43b
E1A-481
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zener 3.082
Abstract: 1SMB3EZ13 1SMB3EZ10 1SMB3EZ100 1SMB3EZ11 1SMB3EZ12 1SMB3EZ51 3051 zener diode 47-10 Thermal Resistance to ambient SMB Case diode IR SMB
Text: 1SMB3EZ6.8~1SMB3EZ100 SILICON ZENER DIODES VOLTAGE 6.8 to 100 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Plastic package has Underwriters Laboratory Flammability
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1SMB3EZ100
SMB/DO-214AA
DO-214AA,
MIL-STD-750,
zener 3.082
1SMB3EZ13
1SMB3EZ10
1SMB3EZ100
1SMB3EZ11
1SMB3EZ12
1SMB3EZ51 3051
zener diode 47-10
Thermal Resistance to ambient SMB Case
diode IR SMB
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1SMB3EZ11
Abstract: 1SMB3EZ12 1SMB3EZ13 1SMB3EZ14 1SMB3EZ15 1SMB3EZ200
Text: 1SMB3EZ11 THRU 1SMB3EZ200 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts FEATURES l For surface mounted applications in order to optimize board space l Low profile package l Built-in strain relief l l Glass passivated junction
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1SMB3EZ11
1SMB3EZ200
DO-214AA
DO-214AA,
MIL-STD-750,
1SMB3EZ12
1SMB3EZ13
1SMB3EZ14
1SMB3EZ15
1SMB3EZ200
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TSP160C
Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04
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50Amp
80Amp
100Amp
375x360x390/390x240x420
375x360x390
O-252
TSP160C
ER1602CT
727 thyristor
uf1002ct
PANJIT ER306
1N4004 SOD-123
272 zk thyristor
mw 137 600g
pg2010
D804C
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smb 347
Abstract: SMB MARKING 60 80
Text: DATA SHEET 1SMB3EZ11~1SMB3EZ39 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 11 to 39 Volts POWER 3.0 Watts SMB/DO-214AA Unit: inch mm FEATURES • Low profile package .155(3.94) .130(3.30) • Built-in strain relief • Glass passivated iunction
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1SMB3EZ11
1SMB3EZ39
SMB/DO-214AA
SMB/DO-214AA,
smb 347
SMB MARKING 60 80
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E1A-481
Abstract: No abstract text available
Text: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
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PDF
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2002/95/EC
DO-214AA,
MIL-STD-750,
2011-REV
E1A-481
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1SMB3EZ10
Abstract: 1SMB3EZ11 1SMB3EZ12 1SMB3EZ13 1SMB3EZ51 ZENER DIODE 5.1B e1a481 E1A-481
Text: 1SMB3EZ6.8~1SMB3EZ51 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 6.8 to 51 Volts POWER 3.0 Watts FEATURES • Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above 11V
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1SMB3EZ51
2002/95/EC
DO-214AA,
MIL-STD-750,
E1A-481)
1SMB3EZ10
1SMB3EZ11
1SMB3EZ12
1SMB3EZ13
1SMB3EZ51
ZENER DIODE 5.1B
e1a481
E1A-481
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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PDF
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TS16949
AEC-Q101
2002/95/EC
2012-REV
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zener 4.7v
Abstract: E1A-481
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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Original
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PDF
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
zener 4.7v
E1A-481
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8v2b
Abstract: No abstract text available
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
8v2b
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1SMB3EZ6.2
Abstract: ZK marking E1A-481
Text: 1SMB3EZ5.6 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 5.6 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Glass passivated iunction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
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PDF
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2002/95/EC
DO-214AA,
MIL-STD-750,
2011-REV
1SMB3EZ6.2
ZK marking
E1A-481
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