OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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Diode 31DQ06
Abstract: 31DQ05 VS-31DQ06TR
Text: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy
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VS-31DQ05,
VS-31DQ05-M3,
VS-31DQ06,
VS-31DQ06-M3
DO-201AD
2002/95/EC
11-Mar-11
Diode 31DQ06
31DQ05
VS-31DQ06TR
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31DQ05TR
Abstract: VS-31DQ VS-31DQ05TR
Text: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy
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VS-31DQ05,
VS-31DQ05-M3,
VS-31DQ06,
VS-31DQ06-M3
DO-201AD
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
31DQ05TR
VS-31DQ
VS-31DQ05TR
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31DQ06
Abstract: No abstract text available
Text: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy
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PDF
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VS-31DQ05,
VS-31DQ05-M3,
VS-31DQ06,
VS-31DQ06-M3
2002/95/EC
DO-201AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
31DQ06
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Untitled
Abstract: No abstract text available
Text: VS-31DQ05, VS-31DQ05-M3, VS-31DQ06, VS-31DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy
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VS-31DQ05,
VS-31DQ05-M3,
VS-31DQ06,
VS-31DQ06-M3
2002/95/EC
DO-201AD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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31DQ
Abstract: 31DQ05 31DQ06 C-16 RS-296-D
Text: 31DQ05, 31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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31DQ05,
31DQ06
31DQ
31DQ05
31DQ06
C-16
RS-296-D
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31DQ06
Abstract: 31DQ 31DQ05
Text: Bulletin PD-2.305 rev. F 11/04 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse
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31DQ05
31DQ06
DO-201
31DQ06
31DQ
31DQ05
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31DQ06
Abstract: Diode 31DQ06 Diode 31DQ 31DQ 31DQ05
Text: Bulletin PD-2.305 rev. E 03/03 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse
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31DQ05
31DQ06
DO-41
31DQ06
Diode 31DQ06
Diode 31DQ
31DQ
31DQ05
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|
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Diode 31DQ06
Abstract: 31DQ Diode 31DQ 31DQ05 31DQ06 pd230
Text: Bulletin PD-2.305 rev. D 03/02 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Characteristics Description/Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
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31DQ05
31DQ06
DO-41
Diode 31DQ06
31DQ
Diode 31DQ
31DQ05
31DQ06
pd230
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DIODES Inc DO201 marking
Abstract: 31DQ 31DQ05 31DQ06 C-16 Diode 31DQ06
Text: 31DQ05, 31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
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31DQ05,
31DQ06
18-Jul-08
DIODES Inc DO201 marking
31DQ
31DQ05
31DQ06
C-16
Diode 31DQ06
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31DQ
Abstract: 31DQ05 31DQ06 Diode 31DQ06
Text: Bulletin PD-2.305 rev. F 11/04 31DQ05 31DQ06 SCHOTTKY RECTIFIER 3.3 Amp Major Ratings and Characteristics Description/ Features The 31DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse
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31DQ05
31DQ06
12-Mar-07
31DQ
31DQ05
31DQ06
Diode 31DQ06
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Untitled
Abstract: No abstract text available
Text: 31DQ05/31DQ06 Vishay High Power Products Schottky Rectifier, 3.3 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for
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31DQ05/31DQ06
18-Jul-08
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Diode 31DQ06
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 3.3A/50— 60V 31DQ05 31DQ06 FEA TU R E S ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM RATING S \ tïpe Voltage Rating ♦ 31DQ05 31DQ06
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OCR Scan
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PDF
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A/50--
31DQ05
31DQ06
31DQ05
Diode 31DQ06
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATU RES ° Low Forward Voltage Drop 5.^.23 DIA - m . • Low Power Loss, High Efficiency 1.50059) » 1.30O51) ° High Surge Capability n 21 .83) MIN 30 Volts through 100 Volts Types Available 10(.39)
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OCR Scan
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PDF
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31DQ05
31DQ06
30O51)
31DQ05
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Diode 31DQ06
Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Text: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »
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OCR Scan
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PDF
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31DQ05
31DQ06
31DQ05
Ti-40
00017T4
Diode 31DQ06
Diode 31DQ05
31DQ06
BACR
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motorola diode cross reference
Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3
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OCR Scan
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PDF
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1N5817
1N5818
1M5819
MBR150
MBR160
MBR190
MBR1100
11DQ03
11DQ04
motorola diode cross reference
replacement UF5402
IR 30D1
diode IR 30D1
10DF2 "cross reference"
1n4007 "direct replacement"
diode RU4A
IR 10D4
1n5818 "direct replacement"
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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OCR Scan
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PDF
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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OCR Scan
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PDF
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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