2SK3559
Abstract: IDA-20
Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal
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2SK3628/2SK3559/2SK3665/2SK3637/2SK3652
2SK3628
2SK3559
2SK3665
2SK3637
2SK3652
E00128AE
IDA-20
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2sk3665
Abstract: 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id
Text: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal
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2SK3628/2SK3559/2SK3665/2SK3637/2SK3652
2sk3665
2SK3559
2SK3628
2SK3652
2SK3637
2SK3665 equivalent input id
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si9402
Abstract: 470uF capacitor FDS6670A LQT12535C1ROM12 LTC1702 LTC1703 T510X477M006AS UP2B-2R2 switching high side mosfet MBR330T
Text: advertisement LTC1702/LTC1703 Switching Regulator Controllers Set a New Standard for Transient Response – Design Note 206 Dave Dwelley The LTC 1702 is the first in a new family of low voltage, high speed switching regulator controllers. It is designed to operate from a standard 5V logic supply and generate
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LTC1702/LTC1703
550kHz
LTC1702
25MHz
50kHz.
550kHz.
A-10A-0A
20mV/DIV
si9402
470uF capacitor
FDS6670A
LQT12535C1ROM12
LTC1703
T510X477M006AS
UP2B-2R2
switching high side mosfet
MBR330T
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n20eg
Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg
Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTD6N20E
MTD6N20E/D
n20eg
6N20E
369D
AN569
MTD6N20E
6n20eg
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Untitled
Abstract: No abstract text available
Text: MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTW32N20E
O-247
MTW32N20E/D
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AN569
Abstract: MTW32N20E MTW32N20EG
Text: MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTW32N20E
O-247
MTW32N20E/D
AN569
MTW32N20E
MTW32N20EG
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PDF
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Untitled
Abstract: No abstract text available
Text: MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTW32N20E
MTW32N20E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTD6N20E
MTD6N20E/D
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PDF
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Untitled
Abstract: No abstract text available
Text: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching
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MTD6N20E
MTD6N20E/D
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germanium
Abstract: 74HC244A 74HC589 ALI M 3329 B1 74HC163
Text: High-Speed CMOS Data Function Selector Guide Design Considerations Device Data Sheets [3 Ordering Information [4 W H A T ’S NEW ! DATA SHEETS ADDED DATASHEETS DELETED MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540
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MC74HCU04A
MC54/74HC390A
MC54/74HC08
MC54/74HCT541
MC74HC76
MC54/74HC393A
MC54/74HC540
MC74HC4020
MC54/74HC86A
MC54/74HC533A
germanium
74HC244A
74HC589
ALI M 3329 B1
74HC163
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PDF
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IRG4PH50U
Abstract: eb 2030 *g4ph50u
Text: International IQR Rectifier PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50U
O-247AC
IRG4PH50U
eb 2030
*g4ph50u
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PDF
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UV 111A
Abstract: PI-212 MOSFET 117c kick back Picor
Text: Not Recommended for New Design PI2123 TM Cool-ORing Series 15 Volt, 15 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2123 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state
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PI2123
PI2123
UV 111A
PI-212
MOSFET 117c
kick back
Picor
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17-pin 5mm x 7mm Thermally Enhanced LGA Package
Abstract: PI2125 PI2125-00-LGIZ
Text: Not Recommended for New Design PI2125 TM Cool-ORing Series 30 Volt, 12 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2125 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state
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PI2125
PI2125
17-pin 5mm x 7mm Thermally Enhanced LGA Package
PI2125-00-LGIZ
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD - 9.1612A IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH40U
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 9.1612B International I R Rectifier IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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1612B
IRG4PH40U
O-247AC
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PDF
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IRG4PH40U-E
Abstract: IRG4PH40U wifi 11n impedance cs 308 utl ups
Text: International IOR Rectifier PD - 9.1 612B IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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OCR Scan
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IRG4PH40U
O-247AC
IRG4PH40U-E
IRG4PH40U
wifi 11n impedance
cs 308
utl ups
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PDF
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IRG4PH50U
Abstract: TO-247AC Package IRG4PH50U
Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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91574B
IRG4PH50U
O-247AC
O-247AC
IRG4PH50U
TO-247AC Package IRG4PH50U
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ge-20 transistor
Abstract: IRG4PH50UPBF 035H IRFPE30 960V
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
ge-20 transistor
IRG4PH50UPBF
035H
IRFPE30
960V
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PDF
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irg4ph50u
Abstract: TO-247AC Package IRG4PH50U
Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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91574B
IRG4PH50U
O-247AC
O-247AC
irg4ph50u
TO-247AC Package IRG4PH50U
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PDF
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035H
Abstract: IRFPE30 IRG4PH40
Text: PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH40UPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
IRG4PH40
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PDF
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TO-247AC Package IRG4PH50U
Abstract: 24V 10A SMPS IRG4PH50U 91574
Text: PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50U
O-247AC
O-247AC
TO-247AC Package IRG4PH50U
24V 10A SMPS
IRG4PH50U
91574
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PDF
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035H
Abstract: IRFPE30
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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PDF
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035H
Abstract: IRFPE30 u1624
Text: PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH40UPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
u1624
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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91574B
IRG4PH50U
O-247AC
O-247AC
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