IRG4PH50U
Abstract: TO-247AC Package IRG4PH50U
Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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91574B
IRG4PH50U
O-247AC
O-247AC
IRG4PH50U
TO-247AC Package IRG4PH50U
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PDF
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IRG4PH50UDPBF
Abstract: 135ns 035H IRFPE30
Text: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50UDPbF
O-247AC
IRFPE30
IRG4PH50UDPBF
135ns
035H
IRFPE30
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PDF
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ge-20 transistor
Abstract: IRG4PH50UPBF 035H IRFPE30 960V
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
ge-20 transistor
IRG4PH50UPBF
035H
IRFPE30
960V
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PDF
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035H
Abstract: IRFPE30
Text: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50UDPbF
O-247AC
IRFPE30
035H
IRFPE30
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PDF
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035H
Abstract: IRFPE30 diode Marking code WT
Text: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50UDPbF
O-247AC
IRFPE30
035H
IRFPE30
diode Marking code WT
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PDF
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035H
Abstract: IRFPE30
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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Original
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91574B
IRG4PH50U
O-247AC
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247in
IRFPE30
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PDF
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IR 1838 T
Abstract: IGBT W 20 NK 50 Z IRG4PH50UD
Text: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50UD
O-247AC
IR 1838 T
IGBT W 20 NK 50 Z
IRG4PH50UD
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PDF
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irg4ph50u
Abstract: TO-247AC Package IRG4PH50U
Text: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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Original
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91574B
IRG4PH50U
O-247AC
O-247AC
irg4ph50u
TO-247AC Package IRG4PH50U
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PDF
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Untitled
Abstract: No abstract text available
Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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1573A
IRG4PH50UD
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50UDPbF
O-247AC
IRFPE30
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PDF
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TO-247AC Package IRG4PH50U
Abstract: 24V 10A SMPS IRG4PH50U 91574
Text: PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50U
O-247AC
O-247AC
TO-247AC Package IRG4PH50U
24V 10A SMPS
IRG4PH50U
91574
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PDF
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IRG4PH50UD
Abstract: IR 1838 T
Text: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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1573A
IRG4PH50UD
O-247AC
IRG4PH50UD
IR 1838 T
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U2335
Abstract: 24V 20A SMPS 035H IRFPE30 24V 10A SMPS ic
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
U2335
24V 20A SMPS
035H
IRFPE30
24V 10A SMPS ic
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PDF
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IRG4PH50U
Abstract: No abstract text available
Text: PD - 91574A IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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1574A
IRG4PH50U
O-247AC
O-247AC
IRG4PH50U
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PDF
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IRG4PC30S
Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage
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O-220
Pak/TO-262
O-220
O-247
Super247
IRGP20B120UD-E
IRG4BC40K
IRG4PC30K
IRG4PC40K
IRG4PC50K
IRG4PC30S
igbt 20A 1200v
IRG4BC20
IRG4PC40W
IRGS14
IRGS14C40L
100C
IRG4BC20W
IRG4BC30W
IRG4BC30W-S
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PDF
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IPM PLASMA
Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
Text: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and
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SIP-05
O-247AC
IRG7PH30K10D
IRGP20B120U-EP
IRG4PH50KDPBF
O-220AB;
O-220
IPM PLASMA
200W solar inverter
SOLAR INVERTER
IRAM136-3063B
3000w smps
300W solar inverter
IRAMS10UP60A
smps 2500w
IRG4PC50SPBF
IRAMY20UP60B
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PDF
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IRG4CH50UB
Abstract: IRG4PH50U ir igbt 1200V 10A
Text: PD- 91775 IRG4CH50UB IRG4CH50UB IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V (BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRG4CH50UB
IRG4CH50UB
150mm,
IRG4PH50U
IRG4PH50U
ir igbt 1200V 10A
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PDF
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STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision
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2002-Sep.
STR-G6551
STR-F6654
g6551
TDA16822
STR-F6653
strg6551
IGBT cross reference
KA5M0565R
TOP224Y equivalent
BUP 312
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PDF
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Untitled
Abstract: No abstract text available
Text: P D - 9.1574 International I R Rectifier IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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OCR Scan
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IRG4PH50U
O-247AC
002022b
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PDF
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C2335
Abstract: No abstract text available
Text: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
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OCR Scan
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IRG4PH50UD
O-247AC
C2335
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PDF
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Untitled
Abstract: No abstract text available
Text: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,
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OCR Scan
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IRG4PH50UD
55M52
002023b
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PDF
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IRG4PH50U
Abstract: eb 2030 *g4ph50u
Text: International IQR Rectifier PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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OCR Scan
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IRG4PH50U
O-247AC
IRG4PH50U
eb 2030
*g4ph50u
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PDF
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