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    DEPLETION MOSFET 50V Search Results

    DEPLETION MOSFET 50V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION MOSFET 50V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 PDF

    IXTP08N100D2

    Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
    Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 IXTP08N100D2 IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N170DHV IXTH1N170DHV Depletion Mode MOSFET VDSX ID on RDS(on) = >  1700V 1A 16  N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX


    Original     		IXTA1N170DHV IXTH1N170DHV O-263HV O-247HV 062in. 100ms 1N170D PDF

    IXTP1R6N100D2

    Abstract: IXTY1R6N100D2
    Text: IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220AB O-220) O-252 O-220 IXTP1R6N100D2 PDF

    IXTH6N100D2

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous


    Original     		IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220AB O-220 O-247) O-263 O-247 IXTH6N100D2 PDF

    T3N100

    Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
    Text: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM


    Original     		IXTA3N100D2 IXTP3N100D2 O-263 O-220) O-263 O-220 O-220AB 100ms 3N100D2 T3N100 IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2 PDF

    IXTH16N10D2

    Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A
    Text: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 depletion mode mosfet T16N1 ixtt16N10D2 DS100258A PDF

    IXTH6N100D2

    Abstract: t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v
    Text: Preliminary Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous


    Original     		IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220AB O-220 O-247) O-263 O-247 IXTH6N100D2 t6n100 IXTA6N100D2 IXTP6N100D2 T6N10 6N100D2 diode 6A 1000v PDF

    Untitled

    Abstract: No abstract text available
    Text: Depletion Mode MOSFET VDSX ID on IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB PDF

    IXTH16N10D2

    Abstract: IXTT16N10D2 16N10
    Text: Advance Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 100 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N10D2 IXTT16N10D2 O-247 O-247) O-268 100ms 16N10D2 IXTH16N10D2 IXTT16N10D2 16N10 PDF

    IXTH16N20D2

    Abstract: 16n20 16N20D2 ixtt16n20d2
    Text: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N20D2 IXTT16N20D2 O-247 O-247) O-268 100ms Impedance10 IXTH16N20D2 16n20 16N20D2 ixtt16n20d2 PDF

    t16n50

    Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250
    Text: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250 PDF

    IXTT16N20D2

    Abstract: 16n20 IXTH16N20D2 16N20D2 40810
    Text: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N20D2 IXTT16N20D2 O-247 O-268 O-247) O-247 100ms Impedance10 IXTT16N20D2 16n20 16N20D2 40810 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH2N170D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1700V 2A 6.5Ω Ω N-Channel TO-247 Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1700 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1700 V VGSX Continuous


    Original     		IXTH2N170D2 O-247 100ms 2N170D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA3N100D2 IXTP3N100D2 O-263 O-220) O-263 O-220 O-220AB 100ms 3N100D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-220) O-263 100ms 1R6N100D2 PDF

    IXTA08N100D2HV

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA08N100D2HV High Voltage Depletion Mode MOSFET VDSX ID on RDS(on) = >  1000V 800mA 21  N-Channel TO-263HV G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1000 V VDGX TJ = 25C to 150C, RGS = 1M


    Original     		IXTA08N100D2HV 800mA O-263HV 062in. 100ms 08N100D2 IXTA08N100D2HV PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous


    Original     		IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms PDF

    08N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-220) O-263 100ms 08N100D2 PDF

    IXTP01N100D

    Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
    Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 O-220) TY01N100D 100ms IXTP01N100D 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ 100 V VGSX Continuous ±20 V


    Original     		IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220 O-247) O-263 O-220 100ms PDF