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IXTH16N10D2 Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A Text: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 depletion mode mosfet T16N1 ixtt16N10D2 DS100258A

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IXTH16N10D2

Abstract: depletion mode mosfet 16N10D2 T16N1 ixtt16N10D2 DS100258A
Text: Preliminary Technical Information IXTH16N10D2 IXTT16N10D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 100V 16A 64mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 175°C 100 V VDGX TJ = 25°C to 175°C, RGS = 1MΩ

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IXTH16N10D2 IXTT16N10D2 O-247 O-268 O-247) O-247 100ms 16N10D2 depletion mode mosfet T16N1 ixtt16N10D2 DS100258A