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    IXTT16N20D2 Search Results

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    IXTT16N20D2 Price and Stock

    Littelfuse Inc IXTT16N20D2

    MOSFET N-CH 200V 16A TO268
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    DigiKey IXTT16N20D2 Tube 1
    • 1 $21.07
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    Newark IXTT16N20D2 Bulk 1
    • 1 $14.82
    • 10 $12.23
    • 100 $9.63
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    IXYS Corporation IXTT16N20D2

    MOSFETs D2 Depletion Mode Power MOSFETs
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    Mouser Electronics IXTT16N20D2
    • 1 $18.65
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    Future Electronics IXTT16N20D2 Tube 300
    • 1 $12.43
    • 10 $12.28
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    IXTT16N20D2 Tube 300
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    IXTT16N20D2 Bag 1
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    TTI IXTT16N20D2 Tube 300
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    TME IXTT16N20D2 1
    • 1 $13.2
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    New Advantage Corporation IXTT16N20D2 60 1
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    IXYS Integrated Circuits Division IXTT16N20D2

    MOSFET DIS.16A 200V N-CH TO268(D3PAK) DEPLETION SM
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    Ozdisan Elektronik IXTT16N20D2
    • 1 $20.88223
    • 10 $20.88223
    • 100 $19.5161
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    IXTT16N20D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTT16N20D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 16A TO-268 Original PDF

    IXTT16N20D2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTH16N20D2

    Abstract: 16n20 16N20D2 ixtt16n20d2
    Text: Advance Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N20D2 IXTT16N20D2 O-247 O-247) O-268 100ms Impedance10 IXTH16N20D2 16n20 16N20D2 ixtt16n20d2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous


    Original     		IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms PDF

    IXTT16N20D2

    Abstract: 16n20 IXTH16N20D2 16N20D2 40810
    Text: Preliminary Technical Information IXTH16N20D2 IXTT16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 200V 16A 73mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 200 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N20D2 IXTT16N20D2 O-247 O-268 O-247) O-247 100ms Impedance10 IXTT16N20D2 16n20 16N20D2 40810 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTT16N20D2 IXTH16N20D2 Depletion Mode MOSFET VDSX ID on RDS(on) = >  200V 16A 80m  N-Channel TO-268 (IXTT) G S Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 200 V VDGX TJ = 25C to 150C, RGS = 1M 200 V VGSX Continuous


    Original     		IXTT16N20D2 IXTH16N20D2 O-268 062in. O-247) O-247 100ms PDF

    IXTA02N100D2

    Abstract: depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2
    Text: Depletion-Mode Power MOSFETs and Applications Abdus Sattar, IXYS Corporation Applications like constant current sources, solid-state relays, telecom switches and high voltage DC lines in power systems require N-channel Depletion-mode power MOSFET that operates as a normally “on” switch when the gate-to-source voltage is zero VGS=0V .


    Original     		AN-D16, IXTA02N100D2 depletion 400V power mosfet IXTP02N100D2 N-Channel Depletion-Mode MOSFET high voltage depletion-mode MOSFET IXTU02N100D2 MOSFET "CURRENT source" IXTY02N100D2 Depletion MOSFET IXTY1R6N50D2 PDF