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    DEATH METAL DIAGRAM Search Results

    DEATH METAL DIAGRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    DEATH METAL DIAGRAM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX081H150A4OU SX081H150A4OU 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX081H150A4OU SX081H150A4OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX081H150A4OU Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 150 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX081H150A4OU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    death metal diagram

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 11-Mar-11 death metal diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX073H045A4OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX073H060A4OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SX073H060S4PT

    Abstract: No abstract text available
    Text: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX073H060A4OT SX073H060S4PT SX110H060S4PU SX128H060S4OV 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S3060

    Abstract: No abstract text available
    Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S3060 PDF

    Untitled

    Abstract: No abstract text available
    Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX073H045A4OT SX073H045S4PT SX085H045S4PU SX110H045A4OU SX110H045S4PU 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX.H060.4. Series www.vishay.com Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 60 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX073H060A4OT SX073H060S4PT SX110H060S4PU SX128H060S4OV 11-Mar-11 PDF

    SX061

    Abstract: No abstract text available
    Text: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX050H100S4PT SX061H100S4PT SX067H100S4PT SX093H100A4OU SX119H100S4PU 08hay 11-Mar-11 SX061 PDF

    SX085H045S4PU

    Abstract: No abstract text available
    Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX073H045A4OT SX073H045S4PT SX085H045S4PU SX110H045A4OU SX110H045S4PU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S060A6. TY059S060A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S060A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 60 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S060A6. TY059S060A6OT TY078S060A6PU TY085S060A6OU 11-Mar-11 PDF

    277A

    Abstract: No abstract text available
    Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		TY080S120A6OU TY080S120S6PU TY093S120A6OU TY102S120A6OU TY102S120S6PU TY119S120A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 277A PDF

    Untitled

    Abstract: No abstract text available
    Text: TY.S120.6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 120 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SX050

    Abstract: sx061 SX DO-214AA
    Text: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX050H100S4PT SX061H100S4PT SX067H100S4PT SX093H100A4OU SX119H100S4PU 08trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SX050 sx061 SX DO-214AA PDF

    Untitled

    Abstract: No abstract text available
    Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		S150A6. TY056S150A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SX.H100.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 100 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode


    Original     		SX050H100S4PT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product TY.S080A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 80 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM


    Original     		S080A6. TY056S080A6OT TY073S080A6PT TY085S080A6OU TY102S080A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TY.S150A6. Series Vishay General Semiconductor Trench MOS Barrier Schottky Bare Die FEATURES TMBS • Trench MOS Schottky technology a c e • VBRM = 150 V • Low forward voltage drop • High frequency operation C 2 d b CIRCUIT DIAGRAM A (1) C (2)


    Original     		S150A6. TY056S150A6OT TY080S150A6OU TY093S150A6OU TY102S150A6OU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    mcdtsjw6

    Abstract: No abstract text available
    Text: REVISIONS PART NO. MDD and PBDD Series ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED Kiran 18/04/09 Suresh 18/04/09 Farnell 04/05/09 Circuit Diagram PCB Layout Scale 8:1 Dimensions : Millimetres Inches This data sheet and its contents (the "Information") belong to the Premier Farnell Group


    Original     		M10002135 mcdtsjw6 PDF