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    DE475 Price and Stock

    IXYS Corporation DE475-501N44A

    RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, VERY HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components DE475-501N44A 78
    • 1 $183.7224
    • 10 $183.7224
    • 100 $157.4763
    • 1000 $157.4763
    • 10000 $157.4763
    		Buy Now

    Cornell Dubilier Electronics Inc 475CKR050M

    Aluminum Electrolytic Capacitors - Radial Leaded 4.7uF 50V 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 475CKR050M Bulk 1,000 1,000
    • 1 -
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    • 1000 $0.0325
    • 10000 $0.03
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    Cornell Dubilier Electronics Inc 475TTA050M

    Aluminum Electrolytic Capacitors - Axial Leaded 4.7uF 50V 20%
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    TTI 475TTA050M Bulk 13,000 500
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    Cornell Dubilier Electronics Inc 475CKS250MGM

    Aluminum Electrolytic Capacitors - Radial Leaded 4.7uF 250V 20% tol ELECTROLYTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 475CKS250MGM Bulk 37,000 1,000
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    • 1000 $0.073
    • 10000 $0.069
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    Cornell Dubilier Electronics Inc 475MKP275KHG

    Safety Capacitors 4.7uF 10% tol FILM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 475MKP275KHG Bulk 6,201 117
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    • 1000 $2.19
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    Find more DE475 price and stock on Findchips.com

    DE475 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DE475-102N20A Directed Energy RF Power MOSFET Original PDF
    DE475-102N20A IXYS TRANS MOSFET N-CH 1000V 20A 6DE 475 Original PDF
    DE475-102N21A Directed Energy RF Power MOSFET Original PDF
    DE475-102N21A IXYS TRANS MOSFET N-CH 1000V 24A 6DE 475 Original PDF
    DE475-501N44A IXYS TRANS MOSFET N-CH 500V 48A 6DE 475 Original PDF
    DE475-501N44A IXYS RF Power MOSFET Original PDF

    DE475 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DE475-501N44A

    Abstract: 400P PIN diode SPICE model
    Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-501N44A 30MHz DE475-501N44A 400P PIN diode SPICE model

    DE475-501N44A

    Abstract: 10-15V 400P PIN diode SPICE model
    Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-501N44A 30MHz DE475-501N44A 10-15V 400P PIN diode SPICE model

    DE475-102N21A

    Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice

    IXFZ140N25T

    Abstract: No abstract text available
    Text: Advance Technical Information IXFZ140N25T GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 Test Conditions Maximum Ratings


    Original     		PDF IXFZ140N25T 200ns DE475 5-10-A IXFZ140N25T

    nec 2401

    Abstract: 1000 volt mosfet Directed Energy 400P DE475-102N20A
    Text: Directed Energy, Inc. An DE475-102N20A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE475-102N20A nec 2401 1000 volt mosfet Directed Energy 400P DE475-102N20A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTZ550N055T2 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 D D D Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTZ550N055T2 DE475 TZ550N055T2

    IXFZ520N075T2

    Abstract: No abstract text available
    Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings


    Original     		PDF IXFZ520N075T2 DE475 IXFZ520N075T2

    offline UPS

    Abstract: IXTZ550N055T2
    Text: Advance Technical Information IXTZ550N055T2 TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 = = RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 55V 550A Ω 1.0mΩ DE475 Symbol Test Conditions VDSS TJ = 25°C to 175°C


    Original     		PDF IXTZ550N055T2 DE475 TZ550N055T2 offline UPS IXTZ550N055T2

    475102N2

    Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-102N21A 30MHz 475102N2 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ140N25T RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 250V 100A Ω 17mΩ 200ns DE475 D D D G Symbol Test Conditions


    Original     		PDF IXFZ140N25T 200ns DE475 5-10-A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFZ520N075T2 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode D D D G Symbol Test Conditions


    Original     		PDF IXFZ520N075T2 DE475

    400P

    Abstract: DE475-501N44A Directed Energy
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE475-501N44A 30MHz 400P DE475-501N44A Directed Energy

    400P

    Abstract: DE475-102N21A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE475-102N21A 30MHz 400P DE475-102N21A

    mosfet 62N

    Abstract: 400P DE475-102N20A 102N20
    Text: DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE475-102N20A mosfet 62N 400P DE475-102N20A 102N20

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


    Original     		PDF

    ir2113 amplifier circuit diagram class D

    Abstract: IXCP10M90S Full Bridge with IR2113 design IGBT 0623 IR2113 IN FULL BRIDGE IXCP10M45S IXDP630PI IR2113 FULL BRIDGE IR2113 APPLICATION NOTE circuit diagram off-line UPS for desktop
    Text: ICs 0623 www.ixys.com Contents Page Page General Contents QA and Environmental Management Systems Product Offering Alphanumeric Index Nomenclature Symbols and Terms Patents and Intellectual Property IXYS III IV V VI XVII XX XXII MICRONIX Analog Mixed Signal ASIC Capabilities


    Original     		PDF IXI848: IXI848A: IXI848S1 IXI848AS1 ir2113 amplifier circuit diagram class D IXCP10M90S Full Bridge with IR2113 design IGBT 0623 IR2113 IN FULL BRIDGE IXCP10M45S IXDP630PI IR2113 FULL BRIDGE IR2113 APPLICATION NOTE circuit diagram off-line UPS for desktop

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    102N06

    Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX
    Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product


    Original     		PDF 500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX

    IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

    Abstract: IXFZ520N075T2 IXTZ550N055T2
    Text: Press Release Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages. Milpitas, CA. and Biel, Switzerland. October 5, 2010 – IXYS Corporation NASDAQ:IXYS announces


    Original     		PDF IXTZ550N055T2 IXFZ520N075T2 IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages

    DEIC420 RF MOSFET Gate Driver IC

    Abstract: 102N06 DEIC420 DE-275 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet DE-375
    Text: EVIC420 DEIC420 High Frequency Gate Driver IC Evaluation Board General Description The EVIC420 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the DEI DEIC420 gate drive IC, as well as to provide a building block


    Original     		PDF EVIC420 DEIC420 EVIC420 EVIC420. DE150 DE-275 DE-375 DE-475 DEIC420 RF MOSFET Gate Driver IC 102N06 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet

    heat sink design guide, IGBT

    Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
    Text: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs


    OCR Scan     		PDF O-220, O-247, O-264 OT-227 boar15 T0-220, O-264, heat sink design guide, IGBT EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247