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    DE150 Search Results

    DE150 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HM2P08PDE150N9LF Amphenol Communications Solutions Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type B, 125 Signal Pin, Press Fit Tail, 250 mating cycles and ROHS Compliant Visit Amphenol Communications Solutions
    HM2P08PDE150N2LF Amphenol Communications Solutions Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type B with 115 Signal Pins and RoHS compatable Visit Amphenol Communications Solutions
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    DE150 Price and Stock

    Delta Electronics Inc S24DE150R3PDFA

    DC DC CONVERTER +/-15V 10W
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    DigiKey S24DE150R3PDFA Tube 574 1
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    Mouser Electronics S24DE150R3PDFA 71
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    Neutron USA S24DE150R3PDFA 50
    • 1 $103.55
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    Delta Electronics Inc S24DE150R5PDFA

    DC DC CONVERTER +/-15V 15W
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    DigiKey S24DE150R5PDFA Tray 542 1
    • 1 $33.33
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    Mouser Electronics S24DE150R5PDFA 536
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    Neutron USA S24DE150R5PDFA 50
    • 1 $123.91
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    Delta Electronics Inc S24DE150R6NDFA

    DC DC CONVERTER +/-15V 20W
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    DigiKey S24DE150R6NDFA Tube 124 1
    • 1 $28.36
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    Mouser Electronics S24DE150R6NDFA 138
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    Neutron USA S24DE150R6NDFA 50
    • 1 $79.99
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    Bertech-Kelex PPTDE-150MM

    TAPE DBL SIDED AMBER 5.91"X36YDS
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    DigiKey PPTDE-150MM Bulk 100 1
    • 1 $221.03
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    California Eastern Laboratories (CEL) KPDE150-H45-B

    SENSOR PHOTODIODE TO18-4 MET CAN
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    DigiKey KPDE150-H45-B Bag 7 1
    • 1 $105.04
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    • 100 $90.0364
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    Find more DE150 price and stock on Findchips.com

    DE150 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DE-150 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    DE-150-101N09 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-150-101N09-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-101N09-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-101N09A Directed Energy RF Power MOSFET Original PDF
    DE150-101N09A IXYS TRANS MOSFET N-CH 100V 9A 6DE 150 Original PDF
    DE150-102N02-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-102N02A Directed Energy RF Power MOSFET Original PDF
    DE150-102N02A IXYS TRANS MOSFET N-CH 1000V 2A 6DE 150 Original PDF
    DE-15010IN14 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-150-201N09 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-150-201N09-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-201N09A Directed Energy RF Power MOSFET Original PDF
    DE150-201N09A IXYS TRANS MOSFET N-CH 200V 15A 6DE 150 Original PDF
    DE-15020IN09 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-15020IP05 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-15045IP02 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-150-501N04 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-150-501N04-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE150-501N04-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF

    DE150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2401

    Abstract: DE150-101N09A PIN diode SPICE model 101N09A
    Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-101N09A 1100P nec 2401 DE150-101N09A PIN diode SPICE model 101N09A

    PIN diode SPICE model

    Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
    Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100


    Original     		PDF DE150-101N09A 101N09A 1100P PIN diode SPICE model DE150-101N09A rf power mosfet 1n spice

    DE150-201N09A

    Abstract: 201N09 PIN diode SPICE model DE-150
    Text: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200


    Original     		PDF DE150-201N09A 201N09 1100P DE150-201N09A PIN diode SPICE model DE-150

    nec 2401

    Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
    Text: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


    Original     		PDF DE150-101N09A 1100P nec 2401 QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09

    Untitled

    Abstract: No abstract text available
    Text: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-102N02A 500Pf

    nec 2401

    Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
    Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-501N04A nec 2401 DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60

    200W MOSFET POWER AMP

    Abstract: nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A
    Text: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-102N02A 500Pf 200W MOSFET POWER AMP nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A

    nec 2401

    Abstract: 201N09 DE150-201N09A
    Text: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-201N09A IS201N09 1100P nec 2401 201N09 DE150-201N09A

    nec 2401

    Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
    Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04

    nec 2401

    Abstract: Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed
    Text: Directed Energy, Inc. An DE150-201N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR


    Original     		PDF DE150-201N09A 1100P nec 2401 Directed Energy QGS 80W 30 ohm mosfet High-Speed Switching 100mhz 201N09 DE150-201N09A Directed

    nec 2401

    Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice
    Text: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE150-102N02A 500Pf nec 2401 DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice

    Untitled

    Abstract: No abstract text available
    Text: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-201N09A 201N09 1100P

    200W MOSFET POWER AMP

    Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
    Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-501N04A 501N04A 200W MOSFET POWER AMP DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model

    PCO-7120

    Abstract: PCA-9145
    Text: PCO-7120 PULSED LASER DIODE • • • • • • • Compact Economical OEM Module 500mA to 50A Output <9nS Rise Time Variable Pulse Width From 12nS to >1uS Repetition Frequency To 1MHz Diode May Be Mounted Directly On The PCO-7120 Pulsed Current Monitor Output


    Original     		PDF PCO-7120 500mA PCO-7120 103mm PCA-9145: PCA-9245 PCA-9145

    PULSED LASER DIODE DRIVER

    Abstract: IXDD415SI PCO-7120 7120 Directed Energy DE-150 for LASER RANGE FINDER . LIDAR DE150 12E9S
    Text: THE PULSE OF THE FUTURE PCO-7120 PULSED LASER DIODE DRIVER MODULE • • • • • • • The PCO-7120 is a compact, economical OEM laser diode driver module designed to provide extremely fast, high current pulses to drive laser diodes in range finder, LIDAR, atmospheric communications and other applications requiring high


    Original     		PDF PCO-7120 200ns PULSED LASER DIODE DRIVER IXDD415SI 7120 Directed Energy DE-150 for LASER RANGE FINDER . LIDAR DE150 12E9S

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


    Original     		PDF 56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    472k 1kv

    Abstract: r 472K 1kv sec capacitor b 472K 1kv DE0405 capacitor 472k 1KV hr r 103k 2kv de0705 472K capacitor capacitor 472K 2KV hr r 681k- 1kv
    Text: LEADED CAPACITORS, NETWORKS & HV CAPACITORS MEDIUM VOLTAGE CAPACITORS 1kV to 6kVDC E.I.A. CLASS II & III DE Series DIMENSIONS: mm Non-Vertical Crimp: DE0507/DE0607 type and rated voltage 6.3kV type Vertical Crimp: 1kV 4.0, 2kV 5.0, 3kV 6.0, 6kV 7.0 D max.


    Original     		PDF DE0507/DE0607 DE04-05 DE06-16 51kgf) 1060hPa. CG01-H 472k 1kv r 472K 1kv sec capacitor b 472K 1kv DE0405 capacitor 472k 1KV hr r 103k 2kv de0705 472K capacitor capacitor 472K 2KV hr r 681k- 1kv

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


    Original     		PDF

    501N04

    Abstract: DE-150-501N04 DE-150
    Text: PRELIMINARY SPECIFICATIONS DE-150 501N04 4.5A, 500V, 1.5Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-150 501N04 150oC 501N04 DE-150-501N04

    canon

    Abstract: regulateur de tension A55-14X equivalente
    Text: BMEAZDA LVU àmasque perforé Shadow-Mask pour T élévision en couleur CATHÛSCÛPE TRICHROMIE ^ 14 ¥ • • • • Luminophores à rendement élevé. Rapport des courants de faisceaux voisins de 1. B rillance accrue de l'écran. Montage à compensation thermique du


    OCR Scan     		PDF 175--r- canon regulateur de tension A55-14X equivalente

    k 2645 MOSFET

    Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
    Text: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology


    OCR Scan     		PDF 00DDD14 DE-150 45IP02 -450V, 00A/p> k 2645 MOSFET CD 4511 data sheet Directed Energy "free energy" circuit k 2645

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics

    opti 82c392

    Abstract: teac fd 235hf opti 486 chipset
    Text: OPTÌ-486SXWB PC/AT Chipset 82C493/82C392/82C206 Preliminary 82C493/82C392 DATA BOOK Version 1.1 August 16, 1991 / OPTi, Inc., 2525 Walsh A venue, Santa Clara, CA 95051 (408) 9 8 0 -8 1 7 8 FAX: 4 0 8 -9 8 0 -8 8 6 0 Disclaimer This specification is subject to change without notice. OPTi, Incorporated assumes


    OCR Scan     		PDF -486SXWB 82C493/82C392/82C206) 82C493/82C392 82C206 80486/P23N opti 82c392 teac fd 235hf opti 486 chipset