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    501N04A Price and Stock

    IXYS Corporation DE150-501N04A

    Mosfet, N, Rf, 500V, De150; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Power Dissipation:200W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°C; Msl:-Rohs Compliant: Yes |Ixys Rf DE150-501N04A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DE150-501N04A Bulk 1
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    SMC Corporation of America PFMB7501-N04-A

    FLOW SWITCH FOR AIR, DIGITAL, 2 COLOR, IP40, 5-500 L/MIN | SMC Corporation PFMB7501-N04-A
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    RS PFMB7501-N04-A Bulk 5 Weeks 1
    • 1 $522
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    SMC Corporation of America PFMC7501-N04-A

    FLOW SWITCH FOR AIR, DIGITAL, 3 COLOR, IP65, 5-500 L/MIN | SMC Corporation PFMC7501-N04-A
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    RS PFMC7501-N04-A Bulk 5 Weeks 1
    • 1 $600
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    SMC Corporation of America PFMC7501-N04-AN

    FLOW SWITCH FOR AIR, DIGITAL, 3 COLOR, IP65, 5-500 L/MIN | SMC Corporation PFMC7501-N04-AN
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    RS PFMC7501-N04-AN Bulk 5 Weeks 1
    • 1 $573.6
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    SMC Corporation of America PFMB7501-N04-AW

    FLOW SWITCH FOR AIR, DIGITAL, 2 COLOR, IP40, 5-500 L/MIN | SMC Corporation PFMB7501-N04-AW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PFMB7501-N04-AW Bulk 5 Weeks 1
    • 1 $543.6
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    501N04A Datasheets Context Search

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    nec 2401

    Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
    Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-501N04A nec 2401 DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60

    nec 2401

    Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
    Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR


    Original     		PDF DE150-501N04A nec 2401 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04

    200W MOSFET POWER AMP

    Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
    Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE150-501N04A 501N04A 200W MOSFET POWER AMP DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


    Original     		PDF 56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv