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    KOA Speer Electronics Inc RK73B2ATTDD271J

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    DigiKey RK73B2ATTDD271J Digi-Reel 10,000 1
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    RK73B2ATTDD271J Cut Tape 10,000 1
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    RK73B2ATTDD271J Reel 10,000 10,000
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    KOA Speer Electronics Inc RK73B2BTTDD271J

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    DigiKey RK73B2BTTDD271J Digi-Reel 10,000 1
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    RK73B2BTTDD271J Cut Tape 10,000 1
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    RK73B2BTTDD271J Reel 10,000 10,000
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    KOA Speer Electronics Inc RK73H1JTTDD2742F

    RES 27.4K OHM 1% 1/10W 0603
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    DigiKey RK73H1JTTDD2742F Digi-Reel 10,000 1
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    RK73H1JTTDD2742F Cut Tape 10,000 1
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    RK73H1JTTDD2742F Reel 10,000 10,000
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    Mouser Electronics RK73H1JTTDD2742F 9,886
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    Bristol Electronics RK73H1JTTDD2742F 20,000
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    KOA Speer Electronics Inc RK73B1JTTDD272J

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    DigiKey RK73B1JTTDD272J Cut Tape 9,950 1
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    KOA Speer Electronics Inc RK73B1JTTDD270J

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    DigiKey RK73B1JTTDD270J Digi-Reel 9,350 1
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    RK73B1JTTDD270J Cut Tape 9,350 1
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    Mouser Electronics RK73B1JTTDD270J 34,753
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    Bristol Electronics RK73B1JTTDD270J 50,000
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    TTI RK73B1JTTDD270J Reel 20,000
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    DD27 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DD27 Mil Electronics 3 Watts of Isolated Output Power, Power Supply Scan PDF
    DD27-700A Facon Semiconductor Paralled Diodes Pairs Scan PDF

    DD27 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LY5160

    Abstract: 5180-G
    Text: SIEMENS AKTIEN GESELLS CHA F M7E D • flEBSbOS DD27141 2 » S I E G S IE M E N S s u p e r -r e d YELLOW GREEN 5 mm LED LAMP LED Lamps T 1 3/4 LS 5180 LY 5180 LG 5180 FEATURES * * * * * * Diffused Lens Wide Viewing Angle 140° With Standoffs T13/< (5 mm) Package Size


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    DD27141 LY5160 5180-G PDF

    A106011

    Abstract: No abstract text available
    Text: , s SIEMENS AKTIENGESELLSCHAF A 1 6 M7E » • fl535bOS DD27TDS 6 « S I E G Features: • TO-18 metal-glass housing • low temperature coefficient • high linearity A 1 — _ T -4 M 7 Application: • oil burner control • exposure meters • automatic dimmers


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    fl535bOS DD27TDS G--13 A106011 PDF

    2N6756

    Abstract: 2N6755 F102 ISQ0020F
    Text: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power


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    34hcib7M 2N6755/2N6756 2N67S6 2N6755 clb74 E77T4 T-39-11 2N6756 F102 ISQ0020F PDF

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE b3E bb53331 DD273SD 6^3 * A P X D BT152 SERIES y v THYRISTORS Glass-passivated thyristors in TO—220AB envelopes, which are particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching. Applications


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    bb53331 DD273SD BT152 220AB BT152-400R 002732b 10I-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: i i N AMER PHILIPS/DISCRETE b'lE »’ bbS3T31 DD27b3b TT3 « A P X BCY70 to 72 y v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended for general purpose industrial applications. The BCY71 is a low noise version. Q U IC K R E F E R E N C E D A T A


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    bbS3T31 DD27b3b BCY70 BCY71 BCY70 BCY71 BCY72 PDF

    Untitled

    Abstract: No abstract text available
    Text: I I I N AUER PHILIPS/DISCRETE t.'lE D bbSa^l DD27bl]i 5 2 3 H A P X P h ilip s S em ico n d u c to rs BCX23 D a ta sh eet statu s P re lim in a ry s p e c ific a tio n d a te o f issue J u n e 1 990 Silicon planar epitaxial transistor QUICK REFERENCE DATA


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    DD27bl BCX23 PDF

    Untitled

    Abstract: No abstract text available
    Text: m bbS3R31 DD27RB1 bTT « A P X JC556 to 558 N AUER PHILIPS/DISCRETE b'lE D SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. QUICK REFERENCE DATA


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    bbS3R31 DD27RB1 JC556 JC556 JC557 JC558 JC556A PDF

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E 19738 Optoelectronic Sp e c ific atio n s_ H A R R IS S EM IC O N D 37E SECTOR D 430S271 DD272G G S 0 c -T - 4 1 -8 7 Photo Coupled Isolator H11J1- H11J5 Ga As Infrared Em itting Diode & Light Activated T riac Driver The GE Solid State HI IJ series consists of a gallium arsenide infrared


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    430S271 DD272G H11J1- H11J5 S-42662 92CS-428S1 PDF

    triac BT 317

    Abstract: BT 317 triac triac BT 06 600 triac BT 24 BT134 BT134-500D triac BT 06 400 triac BT 06 700 triac BT 134 triacs BT 134 w
    Text: N AMER PHILIPS/DISCRETE b^E T> WM bbSa^Bl DD2715b 1Ô7 HIAPX BT134 SE R IE S y v _ _ TR IA C S Giass-passivated 4 Ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal


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    002715b bt134-500 BT134G BT134 00271b5 BT134F triac BT 317 BT 317 triac triac BT 06 600 triac BT 24 BT134-500D triac BT 06 400 triac BT 06 700 triac BT 134 triacs BT 134 w PDF

    curve set t144

    Abstract: MPSA10
    Text: FAIRCHILD SEMICONDUCTOR 64 ]>E" 1 3 4 ^ 7 4 DD273ci2 ^ IT ^mwwwwwuuuuuuua FA IR C H ILD IV1PSA10 w iroM iu r NP N Am plifier Transistor A Schtumberger Com pany Vceo . . . 40 V Min PACKAG E M PSA10 ® TO-92 A B S O L U T E M AXIM UM RAT IN G S (Note 1)


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    E73T5 MPSA10 15CPC curve set t144 PDF

    Untitled

    Abstract: No abstract text available
    Text: I I b^E D • bb53T31 DD27^Sb 43H H A P X JA100 JA101 A PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively. QUICK REFERENCE DATA


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    bb53T31 JA100 JA101 JC500 JC501 0027T5fi PDF

    JC556

    Abstract: JC556A JC556B JC557 JC557A JC557B JC557C JC558 JC558A
    Text: m bbSB^ai DD27TB1 bIT * A P X N AUER PHILIPS/DISCRETE JC556 to 558 b*îE P SILICON PLANAR EPITAXIAL TRANSISTORS General purpose pnp transistors in plastic TO-92 envelopes, especially suitable for use in driver stages of audio amplifiers. Q U IC K R E F E R E N C E D A T A


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    DD27TB1 JC556 JC557 JC558 200Tiaa JC556A JC556B JC556B JC557A JC557B JC557C JC558 JC558A PDF

    TRIAC BT 136

    Abstract: TRIAC BT 127 BT 136 TRIAC TRIAC BY 136 bt 13 g BT136F DDB7111 DS614 UBC667 bte 12 triacs
    Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DD271Ä4 041 « A P X Il BT136F SERIES FULL-PACK TRIACS G la ss-p assivate d 4 a m p e re tr ia c s in S O T - 1 8 6 en v elo p e s, w h ic h fe a tu re an e le c tr ic a lly is o la te d m o u n tin g base. T h e y are in te n d e d f o r use in a p p lic a tio n s re q u irin g h ig h b id ir e c t io n a l tra n s ie n t a n d b lo c k in g


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    bbS3T31 BT136F OT-186 bt136fâ 10Typical d8s73 b53131 TRIAC BT 136 TRIAC BT 127 BT 136 TRIAC TRIAC BY 136 bt 13 g DDB7111 DS614 UBC667 bte 12 triacs PDF

    Untitled

    Abstract: No abstract text available
    Text: N AP1ER PHILIPS/DISCRETE b'JE D Philips Semiconductors_ bt.53^31 DD27Bb5 070 * A P X _Preliminary specification Triac BT139 series H GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated 16 A triacs intended for use in applications


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    DD27Bb5 BT139 O220AB BT139- QQ272b7 O220AB; PDF

    bt134

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB^Bl DD2715b Ifl? APX BT134 SERIES b^E T> J V. TRIACS Glass-passivated 4 Ampere triacs intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance with very low thermal


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    DD2715b BT134 BT134-500 BT134G BT134F PDF

    BT151F-500

    Abstract: crowbar circuit CIT Relay BT151F DDS7314 BT151F500 D8561
    Text: I I N AUER P H I L I P S / D I S C R E T E b*îE » • bbSBIBl DD2731Q THH « A P X I A BT151F SERIES _ FULL-PACK THYRISTORS Glass-passivated thyristors in SO T-186 envelopes, incorporating electrical isolation between the


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    DD27310 BT151F OT-186 BT151F-500 OT-186 D8561 100i2 M2288 crowbar circuit CIT Relay DDS7314 BT151F500 D8561 PDF

    ha 431 transistor

    Abstract: BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 27B2S transistor ag
    Text: N AMER PHILIPS/DISCRETE bTE ]> bhSaTai DD27Ô2S RflT Philips S em iconductors Data sheet status Preliminary specification date ol Issue December 1990 Programmable unijunction transistor QUICK REFERENCE DATA DESCRIPTION A planar pnpn trigger device in a TO-72 metal envelope, intended for


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    27B2S BRY39 10kii 7Z611S0 7Z61149 27fl3b ha 431 transistor BRY39 BRY39 circuit BRY39 application data MSB028 philips bry39 Programmable Unijunction Transistor BRY3 transistor ag PDF

    LPD80

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF i4?E » • fl23SbOS DD27S0A T « S I E G SIEMENS LPD-80A PHOTODARLINGTON ''"V" ¿"i Advance Data Sheet Package Dimensions in Inches (mm «0 I6il 6» I« r " i r ~ -•»i !" 0U<0«l Maximum Ratings • • • • • Collector Emitter Voltage


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    fl23SbOS DD27S0A LPD-80A IRL-80A LPD-80A IRL-80A. LPD80 PDF

    single one jk flipflop

    Abstract: PAL22R
    Text: DE:| 025752b DD271* S 7 ADV MICRO PL A/ PL E/ AR R AYS Tt PAL22RX8A High Speed Programmable Array Logic T-46-13-47 Ordering Information Features/Benefits • Programmable flip-flops allow J-K, S-R, T or D-typet for the most efficient use of product terms • 8 Input/output macrocells for flexibility


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    025752b DD271* 24-pln 300-mll 28-pln PAL22RX8A T-46-13-47 PAL22RX8A single one jk flipflop PAL22R PDF

    bf370

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D I I bbS3^31 DD27b8D TOO APX o ro /u SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended for use in large-signal handling i.f. pre­ amplifiers of TV receivers in combination with surface acoustic wave filters.


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    DD27b8D BF370 bf370 PDF

    LG LED

    Abstract: 5180-G
    Text: SIEMENS AKTIENGESELLSCHAF 47E D flZ35b05 DD27141 2 m S I Z G SIEMENS LS 5 1 8 0 ^ /-^ LY 5180 LG 5180 SUPER-RED YELLOW GREEN T13/4 5 mm LED LAMP Package Dimensions mm S.9 5,5 s s | ! r cm m i S S N « - .Œ - LO - Í tx ~ - — 1.8 ' J .2 •s ^5,7 5,4 1 0.8


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    6235b05 T13/4 5180-G 5180-H 5180-HL 5180-J 5180-EH 5180-F 5180-G LG LED PDF

    c557b

    Abstract: transistor c557b C556A c557b p h BC551 transistor BC 557B 553c BC556A BC558 driver transistor IC 557B
    Text: N AMER PHILIPS/DISCRETE bTE D m ^53^31 DD27S75 7bB H A P X BC556 to 558 SILICON PLANAR EPITAXIAL TRANSISTORS General purpose p-n-p transistors in plastic TO-92 envelopes, especially suitable fo r use in d rive r stages o f audio a m plifiers. Q U IC K R E F E R E N C E D A T A


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    GD27S75 BC556 BC557 BC558 7Z85708 7Z85710 c557b transistor c557b C556A c557b p h BC551 transistor BC 557B 553c BC556A BC558 driver transistor IC 557B PDF

    Thyristor BT 102

    Abstract: BT thyristor thyristor BT 200 N5064 relay 12v 100A 2N5064 thyristor BT
    Text: N AMER P H I L I P S / D I S C R E T E b'ìE D • 1^53^31 DD2714GD 'iôb B A P X A 2N5064 THYRISTOR Fully-diffused thyristor in TO —92 package, w ith low gate current requirement suitable fo r driving from 1C outputs. Applications include relay and coil pulsing, control o f small DC motors, small lamps,


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    bbS3T31 DD2714GD 2N5064 MLA862 100fi Thyristor BT 102 BT thyristor thyristor BT 200 N5064 relay 12v 100A 2N5064 thyristor BT PDF

    L14F1

    Abstract: No abstract text available
    Text: 3875081 G E SO LID 01E STATE 19660 Optoelectronic Specifications_ HARRIS SEMICOND SECTOR Light Detector 37E D H 4302571 DD2712S □ ¡ HAS Planar Silicon Photo-Darlington Amplifier L14F1,L14F2 The GH Solid State L14F1 and L14F2 are supersensitive NPN Planar Silicon


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    DD2712S L14F1 L14F2 L14F2 92CS-42662 92CS-429S1 PDF