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    ASSMANN WSW components GmbH AWL254-DA-Z06D

    PIN HEADER, 6.0/3.0MM, 2.54MM, 6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AWL254-DA-Z06D Bag 8,000
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    • 10000 $0.11568
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    ASSMANN WSW components GmbH AWL254-DA-Z08D

    PIN HEADER, 6.0/3.0MM, 2.54MM, 8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AWL254-DA-Z08D Bag 8,000
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    • 10000 $0.15071
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    ASSMANN WSW components GmbH A-BL254-DA-Z04D

    FEMALE HEADER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-BL254-DA-Z04D Bulk 5,320
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    • 10000 $0.08153
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    ASSMANN WSW components GmbH A-SL200-DA-Z06D

    PIN HEADER, 4.0/2.8MM, 2.00MM, 6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-SL200-DA-Z06D Bag 5,000
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    • 10000 $0.0968
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    ASSMANN WSW components GmbH A-SL200-DA-Z04D

    PIN HEADER, 4.0/2.8MM, 2.00MM, 4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey A-SL200-DA-Z04D Bag 5,000
    • 1 -
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    • 10000 $0.06705
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    DAZ0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ML1220T13RE

    Abstract: IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T
    Text: A B C D E ZZZ1 PCB 04/27 Add PCB Panel P/N for MTDAZ@ 04/27 Add PCB Panel P/N DAZ01S00100 07/09 Change PCB Panel P/N from DAZ01S00100 to DAZ01S00200 PJP1 PJP1 14W_DCIN 15W_DCIN 14W_45@ 15W_45@ MTDAZ@ ZZZ25 1 PCB FBDAZ@ 03/28 Change PCB Panel PN from DAZ01W00101 to DAZ01Q00101


    Original     		PDF DAZ01S00100 DAZ01S00200 DAZ01W00101 DAZ01Q00101 DAZ01Q00102 A30DAZ@ ML1220T13RE IFL90 LS-3548P KB925 LA-3541P intel DG 31 crb LS-354CP ISL6251 PR207 FBMA-L11-201209-221LMA30T

    0.1u_0603_25v7k

    Abstract: GL831 Sil1392 LA-4761P RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00
    Text: A ZZZ1 1 B C D E LA-4761P PCB 1 DAZ06H00100 Compal Confidential KIU10-Tiger M/B Schematics Document 2 2 2009-01-13 REV:1.0 3 3 4 4 Security Classification Classification Issued Date Compal Secret Data Title Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF LA-4761P DAZ06H00100 KIU10-Tiger CustomKIU10 LA-4761P 0.1u_0603_25v7k GL831 Sil1392 RTL8102EL FBMA-L11-160808-800LMT SST25LF080A_SO8-200mil tx2 0918 KB926 SP02000GC00

    APW7141

    Abstract: KAV60 LA-5141P KAV60 LS-5143P kb926 jlvds1 kav60 LA 5141P KB926D ISL6251 sis412 apl5607ki
    Text: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document


    Original     		PDF DAZ08400100 KAV60 LA-5141P LS-5141P/5142P/5143P DA60000BO10 DA20000FM10 LS-5141P DA60000BU10 LS-5142P APW7141 KAV60 LA-5141P LS-5143P kb926 jlvds1 kav60 LA 5141P KB926D ISL6251 sis412 apl5607ki

    kav60 la-5141p

    Abstract: APW7141 KAV60 APL3510B LS-5143P LA-5141P jlvds1 kav60 LA 5141P KB926D APL5607KI-TRG APL5607
    Text: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document


    Original     		PDF DAZ08400100 KAV60 LA-5141P LS-5141P/5142P/5143P DA60000BO10 DA20000FM10 LS-5141P DA60000BU10 LS-5142P kav60 la-5141p APW7141 APL3510B LS-5143P jlvds1 kav60 LA 5141P KB926D APL5607KI-TRG APL5607

    SLG8SP553V

    Abstract: KB926 KB926Qf LA-4271P isl6262acrz RTL8111c sch rt9173d G993P1UF dmit DAN202UT106_SC70-3
    Text: A B C D E ZZZ8 DAZ@ DAZ04300100 PCB 1 1 ZZZ1 DA2@ MAIN BOARD DA600007E10 PCB ZZZ2 DA2@ E board DA40000A910 PCB ZZZ3 DA2@ FP board Compal Confidential DA600007D10 PCB ZZZ4 2 DA2@ Function board DA40000AA10 PCB ZZZ5 DA2@ USB board DA40000AB10 JAT10 M/B Schematics Document


    Original     		PDF DAZ04300100 DA600007E10 DA40000A910 JAT10 DA600007D10 DA40000AA10 DA40000AB10 DA40000AC10 DA40000AD10 A4271 SLG8SP553V KB926 KB926Qf LA-4271P isl6262acrz RTL8111c sch rt9173d G993P1UF dmit DAN202UT106_SC70-3

    D51A12

    Abstract: G990P11U KB926 alc889 ENE-SB3520 ALC889X dell confidential 2009 SS801u ich9 compal
    Text: A B C D E ZZZ8 DAZ@ DAZ04300100 PCB 1 1 ZZZ1 DA2@ MAIN BOARD DA600007E10 PCB ZZZ2 DA2@ E board DA40000A910 PCB ZZZ3 DA2@ FP board Compal Confidential DA600007D10 PCB ZZZ4 2 DA2@ Function board DA40000AA10 PCB ZZZ5 DA2@ USB board DA40000AB10 KAQB0 M/B Schematics Document


    Original     		PDF DAZ04300100 DA600007E10 DA40000A910 DA600007D10 DA40000AA10 DA40000AB10 DA40000AC10 DA40000AD10 A5011 D51A12 G990P11U KB926 alc889 ENE-SB3520 ALC889X dell confidential 2009 SS801u ich9 compal

    NT5SV8M16FS

    Abstract: Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K
    Text: NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb Synchronous DRAM • • • • • • • • • • • • Features • High Performance: Maximum Operating Speed CAS Latency PC166 6KI PC133 (75BI) 2 7.5 10 ns 3 6 7.5 ns •


    Original     		PDF NT5SV8M16FT-6KI NT5SV8M16FS-6KI NT5SV8M16FT-75BI NT5SV8M16FS-75BI 128Mb PC166 PC133 NT5SV8M16FS Nanya NT5SV8M16FS NT5SV8M16FS-75BI Nanya NT5SV8M16FS-75Bi NT5SV8M16FS-6KI NT5SV8M16FT NT5SV8M16FT-6KI nt5sv8m16fs-6k 54-PIN NT5SV8M16FT-6K

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time


    Original     		PDF 0316409C 0316169C 0316809C 1Mx16 16Mbit -12ns 545-DRAM;

    Untitled

    Abstract: No abstract text available
    Text: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page


    Original     		PDF 0316409C 0316169C 0316809C 1Mx16 16Mbit SM2402T-6 SM2403T-6 SM2404T-6 SM2402T-7 SM2403T-7

    EM63A165TS-5G

    Abstract: EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009 EM63A165
    Text: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 4.5/5.4/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture


    Original     		PDF EM63A165TS 16-bit cycles/64ms 54-pin EM63A165 EM63A165TS-5G EM63A165TS-6G EM63A165TS-7G EM63A165TS cke 2009

    NT56V6610C0T-8A

    Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
    Text: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.


    Original     		PDF NT56V6610C0T NT56V6620C0T PC133 PC100 4Mx16) NT56V6610C0T-8A nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A

    Q 2 72 t5

    Abstract: Q 72 t5 T436432B T436432B-55SG T436432B-5S T436432B-5SG
    Text: tm TE CH T436432B SDRAM 512K x 32bit x 4Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION 2M x 32 SDRAM • • • • • 3.3V power supply Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns Internal four banks operation LVTTL compatible with multiplexed address


    Original     		PDF T436432B 32bit 400mil Q 2 72 t5 Q 72 t5 T436432B T436432B-55SG T436432B-5S T436432B-5SG

    T431616D-5S

    Abstract: T431616E
    Text: tm TE CH T431616D/E SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION Fast access time: 5/6/7 ns • Fast clock rate: 200/166/143 MHz • Self refresh mode: standard and low power • Internal pipelined architecture • 512K word x 16-bit x 2-bank


    Original     		PDF T431616D/E 16bit 16-bit cycles/64ms 50-pin 60-ball, T431616D-5S T431616E

    T4312816B

    Abstract: No abstract text available
    Text: tm TE CH T4312816B SDRAM 2M x 16bit x 4Banks Synchronous DRAM 8M x 16 SDRAM FEATURES GRNERAL DESCRIPTION • The T4312816B SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a


    Original     		PDF T4312816B 16bit T4312816B

    BL460

    Abstract: 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b NT5SV16M16AT NT5SV32M8AT NT5SV64M4AT
    Text: NT5SV64M4AT L NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • • • • • • • • • • • • • High Performance: -7K 3 CL=2 -75B, CL=3 -8B, CL=2 Units fCK Clock Frequency 133 133 100 MHz tCK Clock Cycle 7.5 7.5 10 ns —


    Original     		PDF NT5SV64M4AT NT5SV32M8AT NT5SV16M16AT 256Mb BL460 2001hi NT5SV16M16AT-75B transistor t20 nt5sv32m8at-75b

    IS42S32160C

    Abstract: 42S32160C is42s32160 IS42S32160C-75BLI
    Text: IS42S32160C 16Mx32 512Mb SYNCHRONOUS DRAM DESCRIPTION: FEATURES: • • • • • • • • Clock frequency: 166, 133 MHz Fully synchronous operation Internal pipelined architecture Programmable Mode – CAS# Latency: 2 or 3 – Burst Length: 1, 2, 4, 8, or full page


    Original     		PDF IS42S32160C 16Mx32 512Mb IS42S32160C IS42S32160C-75BL IS42S32160C-6BL 8x13mm 42S32160C is42s32160 IS42S32160C-75BLI

    EM638165TS

    Abstract: COMMAND EM638165
    Text: EtronTech EM638165 4Mega x 16 Synchronous DRAM SDRAM (Rev 1.9, 04/2007) Features • • • • • • • • • • • • • Key Specifications Fast access time from clock: 4.5/5/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation


    Original     		PDF EM638165 16-bit cycles/64ms 54-pin 60-Ball, 4Mx16 60-Ball EM638165TS COMMAND EM638165

    sdram 1m x 4x 32

    Abstract: EM636165 EM636165TS
    Text: EtronTech EM636165 Industrial 1Mega x 16 Synchronous DRAM SDRAM (Rev.3.1, Jul/2007) Features Fast access time: 5/5.5 ns Fast clock rate: 166/143 MHz Self refresh mode: standard and low power Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers


    Original     		PDF EM636165 Jul/2007) 16-bit cycles/32ms 50-pin 60-ball, 1Mx16 60-Ball sdram 1m x 4x 32 EM636165 EM636165TS

    Untitled

    Abstract: No abstract text available
    Text: EtronTech Industrial EM638325 2M x 32 Synchronous DRAM SDRAM Rev 1.0 Mar/2006 Pin Assignment (Top View) Features Clock rate: 200/183/166/143 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (512K x 32bit x 4bank) Programmable Mode


    Original     		PDF EM638325 Mar/2006 32bit cycles/64ms

    e24526

    Abstract: IBM0316169C IBM0316809C
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8- Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM


    Original     		PDF IBM0316409C IBM0316169C IBM0316809C IBM13Q4739CC 200-Pin e24526

    E24526

    Abstract: IBM0316169C IBM0316809C
    Text: IBM0316409C 4M x 412/10, 3.3V, SR. IBM0316169C 1M x 1612/8, 3.3V, SR. IBM0316809C 2M x 812/9, 3.3V, SR. IBM13Q8739CC 8M x 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Buffered 8-Byte Dual In-Line Memory Module • 8M x 72 Synchronous DRAM DIMM


    Original     		PDF IBM0316409C IBM0316169C IBM0316809C IBM13Q8739CC 200-Pin E24526

    EM63A165TS-6G

    Abstract: EM63A165TS cke 2009 EM63A165TS-7G A80-1 EM63A165 A0912
    Text: EtronTech EM63A165TS 16M x 16 bit Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • • • • • Fast access time from clock: 5/5.4 ns Fast clock rate: 166/143 MHz Fully synchronous operation Internal pipelined architecture


    Original     		PDF EM63A165TS 16-bit cycles/64ms 54-pin EM63A165 EM63A165TS-6G EM63A165TS cke 2009 EM63A165TS-7G A80-1 A0912

    Untitled

    Abstract: No abstract text available
    Text: IS42S32160A1 4M Words x 32 Bits x 4 Banks 512-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Concurrent auto precharge · Clock rate:166/143 MHz · Fully synchronous operation · Internal pipelined architecture · Four internal banks (4M x 32bit x 4bank) · Programmable Mode


    Original     		PDF IS42S32160A1 512-MBIT) 32bit cycles/64ms 8x13mm, IS42S32160A1

    Untitled

    Abstract: No abstract text available
    Text: IS42S32800D 2M Words x 32 Bits x 4 Banks 256-Mbit Synchronous DRAM PRELIMINARY INFORMATION OCTOBER 2007 FEATURES DESCRIPTION • Concurrent auto precharge • Clock rate:166/143 MHz • Fully synchronous operation • Internal pipelined architecture • Four internal banks (2M x 32bit x 4bank)


    Original     		PDF IS42S32800D 256-Mbit) 32bit cycles/64ms 8x13mm,