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    DATASHEETS FOR 7400 IC Search Results

    DATASHEETS FOR 7400 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    DATASHEETS FOR 7400 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    DIM1600FSS17-A000

    Abstract: No abstract text available
    Text: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)


    Original     		PDF DIM1600FSS17-A000 DS5833-1 LN23957) DIM1600FSS17-A000

    APT6015LVR

    Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR

    data sheet IC 7400

    Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
    Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon


    Original     		PDF DIM1600FSM17- DS5455-3 LN26327) data sheet IC 7400 IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000

    74151 waveform

    Abstract: CY7C340 5128LC 7C340 programming 7C340 CY7C341B CY7C342B CY7C344 CY7C346 FLASH370
    Text: 7c340: 12-13-90 Revision: October 19, 1995 CY7C340 EPLD Family Multiple Array Matrix HighĆDensity EPLDs called expander product terms. These exĆ Ċ VHDL simulation ViewSimt Ċ Available on PC and Sun platforms panders are used and shared by the macroĆ


    Original     		PDF 7c340: CY7C340 35aproductmacrocell. 74151 waveform 5128LC 7C340 programming 7C340 CY7C341B CY7C342B CY7C344 CY7C346 FLASH370

    IC 7400 datasheet

    Abstract: data sheet 7400 IC data sheet IC 7400 internal circuit diagram of 7400 IC DIM600XSM45-F000 110nF
    Text: Preliminary Data DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability


    Original     		PDF DIM600XSM45-F000 DS5874-1 LN24333) IC 7400 datasheet data sheet 7400 IC data sheet IC 7400 internal circuit diagram of 7400 IC DIM600XSM45-F000 110nF

    ge traction motor

    Abstract: DIM600XSM45-F000
    Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module


    Original     		PDF DIM600XSM45-F000 DS5874-1 LN24724) ge traction motor DIM600XSM45-F000

    internal diagram of 7400 IC

    Abstract: DIM1600FSM17-A000
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5455-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.1 May 2002


    Original     		PDF DIM1600FSM17-A000 DS5455-2 2400y internal diagram of 7400 IC DIM1600FSM17-A000

    DIM1600FSM17-A000

    Abstract: DS5455-2
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2001, version DS5455-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.0 March 2002


    Original     		PDF DIM1600FSM17-A000 DS5455-1 DS5455-2 DIM1600FSM17-A000

    DIM1600FSM17-A000

    Abstract: No abstract text available
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002


    Original     		PDF DIM1600FSM17-A000 DS5455-2 DS5455-3 3300Varantee DIM1600FSM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


    Original     		PDF DIM1600FSM17-A000 DS5455-1 DIM1600FSM17-A000

    pin DIAGRAM OF IC 7400

    Abstract: data sheet IC 7400 IC 7400 datasheet 12v to 1000v inverters circuit diagrams IC 7400 pin diagram bi-directional switches IGBT internal circuit diagram of 7400 IC internal diagram of 7400 IC us 7400 ic DIM1600FSM17-A000
    Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002


    Original     		PDF DIM1600FSM17-A000 DS5455-2 DS5455-3 3300Varantee pin DIAGRAM OF IC 7400 data sheet IC 7400 IC 7400 datasheet 12v to 1000v inverters circuit diagrams IC 7400 pin diagram bi-directional switches IGBT internal circuit diagram of 7400 IC internal diagram of 7400 IC us 7400 ic DIM1600FSM17-A000

    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 GA100NA60UP

    application notes igbt induction heating

    Abstract: VS-GA100NA60UP
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 application notes igbt induction heating VS-GA100NA60UP

    FZ1200r16KF4

    Abstract: siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS
    Text: Technical Improvements in 1700V High Power Modules with Rated Currents up to 2400A“ * O. Schilling, F. Auerbach , R. Spanke, M. Hierholzer eupec GmbH, Max Planck Str. 1, D-59581 Warstein-Belecke * Siemens AG, Semiconductor-PS, Balanstraße 73, D-81541 Munich


    Original     		PDF D-59581 D-81541 FZ1200r16KF4 siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS

    TRANSISTOR TC 100

    Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 TRANSISTOR TC 100 GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf

    VS-GA100NA60UP

    Abstract: No abstract text available
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA100NA60UP E78996 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA100NA60UP

    application notes igbt induction heating

    Abstract: VS-GA100NA60UP
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA100NA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 application notes igbt induction heating VS-GA100NA60UP

    VS-GA100NA60UP

    Abstract: No abstract text available
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original     		PDF VS-GA100NA60UP E78996 2002/95/EC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA100NA60UP

    Untitled

    Abstract: No abstract text available
    Text: CY7C340 EPLD Family CYPRESS SEMICONDUCTOR • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology CY7C34X • Advanced 0.65-micron CMOS technology to increase performance


    OCR Scan     		PDF CY7C340 CY7C34X) 65-micron CY7C34XB) 1076-compliant CY3340 CY7C341 CY3340F CY3342

    25128LI

    Abstract: 5130LC vhdl 74161 5128LC 5192LC
    Text: fax id: 6100 p vXpX : v«*1 C Y 7 C 3 4 0 EP L D Fami l y - Multiple Array Matrix High-Density EPLDS tion of innovative architecture and state-of-the-art process, the MAX EPLDs offer LSI density without sacrificing speed. Feat ures • E r a s a b l e , u s e r - c o n f i g u r a b l e C M O S E P L D s c a p a b l e of


    OCR Scan     		PDF CY7C342B. 25128LI 5130LC vhdl 74161 5128LC 5192LC

    Untitled

    Abstract: No abstract text available
    Text: CY7C340 EPLD Family 0 CYPRESS Multiple Array Matrix High-Density EPLDs — VHDL simulation ViewSim Features • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions • 0.8-micron double-metal CMOS EPROM technology (CY7C34X)


    OCR Scan     		PDF CY7C340 CY7C34X) 65-micron CY7C34XB) 7C342 342-30H 7C342â 35HMB

    epm5032dc

    Abstract: 5130Q 5128A 74151 waveform 7C340 epld 342B rc 74151
    Text: CY7C340 EPLD Family •= CYPRESS Multiple Array Matrix High-Density EPLDs Features — VHDL sim ulation ViewSim M • Erasable, user-configurable CMOS EPLDs capable o f implementing highdensity custom logic functions — Available on PC and Sun platforms


    OCR Scan     		PDF CY7C34X) 65-micron CY7C34XB) CY7C340 5130LC 5130L 5130LI 5130QC 5130Q epm5032dc 5128A 74151 waveform 7C340 epld 342B rc 74151