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    DATASHEET SE 110N Search Results

    DATASHEET SE 110N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK110N65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
    HM2P07PC5110N9LF Amphenol Communications Solutions Back Plane Connectors,2mm Hard Metric Series,Millipacs, 5 Row Vertical Header, Type A with Peg 2.5mm, 110 Signal Pin, Press Fit Tail, 250 mating cycles and ROHS Compliant Visit Amphenol Communications Solutions
    HM2P07PDK110N9LF Amphenol Communications Solutions Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type A with Peg 2.5mm, 110 Signal Pin, Press Fit Tail, 250 mating cycles and ROHS Compliant Visit Amphenol Communications Solutions
    HM2P88PDE110N9LF Amphenol Communications Solutions Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type E, 200 Signal Pin, Press Fit Tail, 250 mating cycles and ROHS Compliant Visit Amphenol Communications Solutions
    HM2J07PE5110N9LF Amphenol Communications Solutions Back Plane Connectors, 2mm Hard Metric Series, 5 RowRight angle Header Type A Press Fit , Unshielded , 250 mating cycles ROHS Compliant Visit Amphenol Communications Solutions

    DATASHEET SE 110N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    31136

    Abstract: S71NS064JA0BFW21
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM PRELIMINARY Datasheet Distinctive Characteristics


    Original     		S71NS128JA0/S71NS064JA0 16-Bit) Am29F Am29LV 31136A3 31136 S71NS064JA0BFW21 PDF

    L1-L10

    Abstract: MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S71WS-N S29WS128N S29WS256N S71WS128NB0
    Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		S71WS-N S71WS-N L1-L10 MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S29WS128N S29WS256N S71WS128NB0 PDF

    Application Note vdfpn8 numonyx

    Abstract: Application Note mlp8
    Text: M25P64 64 Mbit, low voltage, Serial Flash memory with 75 MHz SPI bus interface Features „ 64 Mbit of Flash memory „ 2.7 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) „ Page Program (up to 256 Bytes)


    Original     		M25P64 2017h) 20-year Application Note vdfpn8 numonyx Application Note mlp8 PDF

    MX25L512E

    Abstract: MX25L1006 MX25L512 mx25l1005 MX25L1006E mxic xtrarom MX25L512C MX25L1005C 88us xtrarom
    Text: APPLICATION NOTE Migrating to MX25L512E and MX25L1006E from MX25L512/512C and MX25L1005/1005C 1. Introduction This application note is the migration guide from the MX25L512/MX25L512C to the MX25L512E, and the MX25L1005/MX25L1005C to the MX25L1006E. The MX25L512E and MX25L1006E are capable of Dual Output mode Single Input / Dual Output .


    Original     		MX25L512E MX25L1006E MX25L512/512C MX25L1005/1005C MX25L512/MX25L512C MX25L512E, MX25L1005/MX25L1005C MX25L1006E. MX25L1006E MX25L1006 MX25L512 mx25l1005 mxic xtrarom MX25L512C MX25L1005C 88us xtrarom PDF

    MICRON mcp

    Abstract: 31136 S71NS064JA0 S71NS128JA0
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics


    Original     		S71NS128JA0/S71NS064JA0 16-Bit) 31136A1 MICRON mcp 31136 S71NS064JA0 S71NS128JA0 PDF

    31136

    Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
    Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics


    Original     		S71NS128JA0/S71NS064JA0 16-Bit) 31136A2 31136 S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002 PDF

    MLP8 m25p64 PACKAGE

    Abstract: MLP8 package MLP8 m25p64 VDFPN 8x6 SO16 wide package vdfpn8 28-Apr-2003 M25P64 VDFPN M25P64S
    Text: M25P64 64 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface Features „ 64 Mbit of Flash memory „ 2.7 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 50 MHz clock rate maximum VDFPN8 (ME) 8 x 6 mm (MLP8) „ VPP = 9 V for Fast Program/Erase mode


    Original     		M25P64 2017h) MLP8 m25p64 PACKAGE MLP8 package MLP8 m25p64 VDFPN 8x6 SO16 wide package vdfpn8 28-Apr-2003 M25P64 VDFPN M25P64S PDF

    Numonyx AN1995

    Abstract: numonyx m25p40 Numonyx MLP8 package AN1995 M25P40 03JA
    Text: M25P40 4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 4 Mbit of Flash memory „ 2.3 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum „ Page Program (up to 256 bytes) in 0.8 ms


    Original     		M25P40 2013h) Numonyx AN1995 numonyx m25p40 Numonyx MLP8 package AN1995 M25P40 03JA PDF

    numonyx m25p40

    Abstract: mlp8 numonyx ufdfpn8 SPI
    Text: Numonyx Forté Serial Flash Memory M25P40 4 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features „ 4 Mbit of Flash memory „ 2.3 V to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 75 MHz clock rate maximum


    Original     		M25P40 2013h) numonyx m25p40 mlp8 numonyx ufdfpn8 SPI PDF

    LC5512MV-45FN256C

    Abstract: LC5256MV-4F256C LC5256MV-4FN256C LC5256MV-5F256C LC5256MV-5F256I LC5256MV-5FN256C LC5256MV-5FN256I LC5256MV-75F256C LC5256MV-75F256I LC5256MV-75FN256C
    Text: ispXPLD 5000MX Device Datasheet June 2010 Select Devices Discontinued! Product Change Notifications PCNs #09-10 has been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.


    Original     		5000MX LC5256MV LC5256MB LC5256MC LC5256MV-4F256C LC5256MV-4FN256C LC5256MV-5F256C LC5256MV-5FN256C LC5256MV-75F256C LC5256MV-75FN256C LC5512MV-45FN256C LC5256MV-4F256C LC5256MV-4FN256C LC5256MV-5F256C LC5256MV-5F256I LC5256MV-5FN256C LC5256MV-5FN256I LC5256MV-75F256C LC5256MV-75F256I LC5256MV-75FN256C PDF

    M25PX32

    Abstract: No abstract text available
    Text: M25PX32 32-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features „ SPI bus compatible serial interface „ 75 MHz maximum clock frequency „ 2.7 V to 3.6 V single supply voltage „ Dual input/output instructions resulting in an


    Original     		M25PX32 32-Mbit, 64-Kbyte 64-byte 64-Kbyte) M25PX32 PDF

    Untitled

    Abstract: No abstract text available
    Text: SHARP 10. 8 . 1997 FLASH MEMORY LH28F160B GX-XXXX V e r. 0 SHARP CORPORATION LHF16BXX LH28F160BGX-XXXX 16 Mbit 1024 Kbit x 16 2.4V-only Flash Memory CONTENTS PAGE 5.0 FEATURES. 1.0 INTRODUCTION. 2 1.1 New Features. 2


    OCR Scan     		LH28F160B LHF16BXX LH28F160BGX-XXXX LH28F160BGX-XXXX PDF

    Untitled

    Abstract: No abstract text available
    Text: M29KW064E 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Read ■ – VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: 90, 110ns ■


    Original     		M29KW064E 110ns TSOP48 0020h 88AFh TFBGA48 PDF

    sung wei

    Abstract: JST 150-10
    Text: I LHF16BXX 1 LH28F160BGX-XXXX 16M-BIT 1024KB x16 2.4V-only FLASH MEMORY FEATURES V 2.4V-only Single Voltage Technology 2.4V -2.6 V Vccand Vpp Read/Write/Erase Operation: High Speed Products 2.4V-3.0V V ^ a n d Read/Write/Erase Operation: Standard Products


    OCR Scan     		LHF16BXX LH28F160BGX-XXXX 16M-BIT 1024KB 32k-word 110ns 120ns 100ns 32KwMd sung wei JST 150-10 PDF

    28F640J3

    Abstract: 28F256J3 28F256K18 E28F640J3A-120 56-Lead TSOP Package PC28F640J3 28F128J3 28F160S3 28F320J3 28F320J5
    Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads


    Original     		28F256J3, 28F128J3, 28F640J3, 28F320J3 x8/x16) 256Mbit 32-Byte 128-bit --64-bit 28F640J3 28F256J3 28F256K18 E28F640J3A-120 56-Lead TSOP Package PC28F640J3 28F128J3 28F160S3 28F320J3 28F320J5 PDF

    28F640J3

    Abstract: E28F640J3A-120 Intel StrataFlash Memory j3 28F256K18 28F128J3 28F160S3 28F256J3 28F320J3 28F320J5 28F320S3
    Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page-Mode Reads


    Original     		28F256J3, 28F128J3, 28F640J3, 28F320J3 x8/x16) 256Mbit 32-Byte 128-bit --64-bit 28F640J3 E28F640J3A-120 Intel StrataFlash Memory j3 28F256K18 28F128J3 28F160S3 28F256J3 28F320J3 28F320J5 28F320S3 PDF

    M25PX64

    Abstract: TBGA24 5869s VDFPN8 ME-5
    Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface Features „ SPI bus compatible serial interface „ 75 MHz maximum clock frequency „ 2.7 V to 3.6 V single supply voltage „ Dual input/output instructions resulting in an


    Original     		M25PX64 64-Mbit, 64-Kbyte 64-byte M25PX64 TBGA24 5869s VDFPN8 ME-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: M29KW064E 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC= 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V


    Original     		M29KW064E 100ns 0020h 88AFh TSOP48 PDF

    vdfpn8

    Abstract: Application Note vdfpn8 numonyx M25PX64 wip 59 27FFFFH
    Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface Features „ SPI bus compatible serial interface „ 75 MHz maximum clock frequency „ 2.7 V to 3.6 V single supply voltage VDFPN8 (ME) 8 x 6 mm (MLP8) „ Dual input/output instructions resulting in an


    Original     		M25PX64 64-Mbit, 64-Kbyte 64-byte 64-Kbyte) vdfpn8 Application Note vdfpn8 numonyx M25PX64 wip 59 27FFFFH PDF

    Untitled

    Abstract: No abstract text available
    Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial flash memory with 75 MHz SPI bus interface Features „ SPI bus compatible serial interface „ 75 MHz maximum clock frequency „ 2.7 V to 3.6 V single supply voltage VDFPN8 (ME) 8 x 6 mm (MLP8) „ Dual input/output instructions resulting in an


    Original     		M25PX64 64-Mbit, 64-Kbyte TBGA24 PDF

    IBM11E1320B

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 2 0 B IB M 1 1 E 1 3 2 0 B IB M 1 1 D 2 3 2 0 B 1M/2M x 32 DRAM Module Features • Low active current dissipation • All inputs & outputs are fully TTL & C M O S compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only, CBR and Hidden


    OCR Scan     		72-Pin 110ns 130ns IBM11D2320B IBM11D1320B IBM11E1320B SA14-4306 03H7139) SA14-4307 03H7140) IBM11E1320B PDF

    flash memory spi

    Abstract: No abstract text available
    Text: Micron M25PE40 Serial Flash Memory Features Micron M25PE40 Serial Flash Memory Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard Pinout Features • • • • • • • • • • • • • • 4Mb of page-erasable Flash memory 2.7V to 3.6V single supply voltage


    Original     		M25PE40 8013h) 09005aef845660f0 flash memory spi PDF

    11D1320B-60J

    Abstract: 11D-1320B
    Text: IBM11D1320B IBM11D2320B 1M/2M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-ln-Line Memory Module • Performance: High Performance C M O S process Single 5V, ± 0.5V Power Supply Low active current dissipation All inputs & outputs are fully TTL & C M O S


    OCR Scan     		IBM11D1320B IBM11D2320B 72-Pin 110ns 1130ns SA14-4306 03H7139) SA14-4307 03H7140) T00bl4b 11D1320B-60J 11D-1320B PDF

    251902

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Software — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode


    Original     		28F640L18, 28F128L18, 28F256L18 128Mb 16-Mbit 256Mb 16-Kword 8x10x1 251902 PDF