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    D7000 Search Results

    D7000 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    ZLED7000ZI1R Renesas Electronics Corporation 40V LED Driver with Internal Switch Visit Renesas Electronics Corporation
    ZLED7000KITD1 Renesas Electronics Corporation Demo Kit for ZLED7000 Visit Renesas Electronics Corporation
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    D7000 Price and Stock

    Nextgen Components MMBD7000

    Swithching Diode 100V 200MA SOT2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD7000 Reel 3,000,000 12,000
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    MOSLEADER MMBD7000-ML

    0.35W 100V 200A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD7000-ML Reel 300,000 200
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    • 10000 $0.04132
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    Flip Electronics MMBD7000

    DIODE ARRAY GP 100V 200MA SOT23
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    DigiKey MMBD7000 Reel 232,603 3,000
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    Central Semiconductor Corp CMPD7000 TR PBFREE

    DIODE ARRAY GP 100V 200MA SOT23
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    DigiKey CMPD7000 TR PBFREE Reel 63,000 3,000
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    CMPD7000 TR PBFREE Cut Tape 2,634 1
    • 1 $0.25
    • 10 $0.168
    • 100 $0.0822
    • 1000 $0.04765
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    Mouser Electronics CMPD7000 TR PBFREE 118,236
    • 1 $0.14
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    • 100 $0.049
    • 1000 $0.041
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    Infineon Technologies AG MMBD7000LT1HTSA1

    DIODE ARRAY GP 100V 200MA SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBD7000LT1HTSA1 Reel 39,000 3,000
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    MMBD7000LT1HTSA1 Cut Tape 2,101 1
    • 1 $0.36
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    • 100 $0.1222
    • 1000 $0.07083
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    Rochester Electronics MMBD7000LT1HTSA1 47,342 1
    • 1 $0.0401
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    Find more D7000 price and stock on Findchips.com

    D7000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Chmc d7000

    Abstract: Chmc s D7000 Shaoxing Silicore Technology Silicore D-7000
    Text: Silicore LOW POWER AMPLIFIER D7000 Outline Drawing DESCRIPTION The D7000 is a monolithic integrated circuit and suitable dual amplifier for low power. FEATURE Low Quiescent Current. High Power Supply Ripple Rejection. Low Voltage Operation. A few of External Part Required.


    Original     		PDF D7000 D7000 D7000. Chmc d7000 Chmc s Shaoxing Silicore Technology Silicore D-7000

    Socket S1g1

    Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
    Text: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,


    Original     		PDF

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Untitled

    Abstract: No abstract text available
    Text: This browser does not have Java enabled. TE Connectivity My Cart | My Part Lists | Sign In/Register Have a Question? What can we help you find? Chat with a Product Information Specialist Products Industries Resources About TE


    Original     		PDF

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


    Original     		PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


    Original     		PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


    Original     		PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


    Original     		PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    MX29GL256FLT2I-90Q

    Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
    Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC


    Original     		PDF MX29GL256F PM1544 MX29GL256F 64KW/128KB 16-byte/8-word 64-byte/32-word 128-word 100mA MX29GL256FLT2I-90Q MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV2562M 120R C8800

    Untitled

    Abstract: No abstract text available
    Text: NO D ESC R IPT IO N A 31±0,3 — 31±0.5 71.5±0.5 — 71,5 REF, 28.7+0.3— 28,7 REF. 11,4 — 11.4 REF, 08,0 — 08 REF, DATE A A ADD MIS PART ND, 04,01,04' 177-835 - -D70-00040 P70-00040 — D70-00040 12.29,06' 06.28,00' A .449 11,4 REF, (.250) 06,340


    OCR Scan     		PDF -D70-00040 P70-00040 D70-00040 0-00040A

    Untitled

    Abstract: No abstract text available
    Text: NO A A DESCRIPTION ADD MIS PART ND. 1 7 7 -8 2 9 — D 70-00039 P 7 0-00 03 9— D 70-00039 DATE 04.01,04' 12.29.06' A DRAWN tft CHECK APPROV TOLERANCE ,X + 0.2 .XX ± 0.1 .XXX ± 0 .0 5 ANGLE ± 5° A MIS P A R T f t p -p i □ 7 0 -0 0 0 3 9 A AUDIO A D A P T O R


    OCR Scan     		PDF D70-00039

    CI 4069

    Abstract: cd 14049 MC5805 MC68705 by 641 sffb "CI 4069" cd 4069 pin data HEF SCHMITT-TRIGGER IN NTE 4069
    Text: M O T O R O L MC6805T2 A A d v a n c e I n fo r m a t io n HMOS H IG H DE N S ITY, N -CHA NNE L, S ILICO N-G A TE , DEPLETION LOAO 8 - BIT M IC R O C O M P U T E R U N IT W IT H PLL LOGIC T h e M C 6 8 0 5 T 2 M ic r o c o m p u te r U n it (M C U ) w it h P L L lo g ic is a


    OCR Scan     		PDF MC6805T2 MC6805T2 M6805 M6800-based MCM2716S MCM2532) CI 4069 cd 14049 MC5805 MC68705 by 641 sffb "CI 4069" cd 4069 pin data HEF SCHMITT-TRIGGER IN NTE 4069

    A81DC

    Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
    Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF


    OCR Scan     		PDF ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040

    MC8503

    Abstract: RRD-102V2.0 LM2578T-5.0 SLMS2.0 cxd1602c-5.0 REA332M1HCC1836-3.0 LM2290S-5.0 MTO13FAD-8.0 L6284-3.0 L22675-5.0
    Text: M OTO RO LA SC -C L O G IO 4b DE| b 3 t,7 2 S H 004Ö S57 4 | '/7 A f O T O R O t A MC8503 P.O. BO X 20912 • PH O E N IX . A R IZ O N A 85036 UNIVERSAL POLYNOMIAL GENERATOR UPG The M C 8 5 0 3 Universal Polynom ial G enerator (U PG ) is used in serial digital data handing systems fo r error detection and correction.


    OCR Scan     		PDF MC8503 MC8503 RRD-102V2.0 LM2578T-5.0 SLMS2.0 cxd1602c-5.0 REA332M1HCC1836-3.0 LM2290S-5.0 MTO13FAD-8.0 L6284-3.0 L22675-5.0

    mcm6830

    Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
    Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories


    OCR Scan     		PDF MS800MM0S MC3870 MC14S00B, MC141000/1206 M2900 M10800 M6800 MC14500B, MC141000/1200 mcm6830 EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2