Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D45C3 TRANSISTOR Search Results

    D45C3 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D45C3 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. D45C3 Silicon PNP Power Transistors DESCRIPTION • Low Saturation Voltage • Good Linearity of HFE • Fast Switching Speeds • Complement to Type D44C3


    Original
    D45C3 D44C3 O-220C -50mA -100mA -20mA PDF

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


    Original
    2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801 PDF

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


    Original
    BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100 PDF

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


    Original
    Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033 PDF

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


    Original
    MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100 PDF

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


    Original
    BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000 PDF

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


    Original
    MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108 PDF

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


    Original
    MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100 PDF

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


    Original
    BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903 PDF

    ge d45c8

    Abstract: GE D45C5 transistor D44C6 5069 transistor 12C1 90-175 D40C7 TC 5068 D44C2 D44C3
    Text: SILICON POWER TRANSISTORS COMPLEMENTARY 4 AMPERE Pt Tc - 25°C PNP W Vcio Min (V) D44C1 — 30.0 30 — D45C1 27.0 — 30 D44C2 — 30.0 30 — D45C2 27.0 -3 0 D44C3 — 30.0 30 NPN — D44C4 D45C3 27.0 -3 0 aou> -D45C4 Package Type Package Outline No. Silecifii:;ition


    OCR Scan
    200mA D44C1 045C1 D44C2 D45C2 D44C3 D45C3 D44C4 D40N1 D40N2 ge d45c8 GE D45C5 transistor D44C6 5069 transistor 12C1 90-175 D40C7 TC 5068 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICON» SECTOR SbE I> WM M3DEE71 GOMOfl2i4 7T1 H H A S D45C Series File Number 2352 7 =-3 3 - / 7 Silicon P-N-P Transistors Complementary to the D44C Series General-Purpose Types for Medium -Power Switching and Am plifier Applications Features: • Very low collector saturation voltago 1-0.5V typ. @ -3.0A I q ]


    OCR Scan
    M3DEE71 D45C-series -20mA, 300ms PDF

    D45c3 TRANSISTOR

    Abstract: D45CZ D45C1 D45C3 D45C2 D45C4 D43C1 D44C D45C D45C10
    Text: D45C Series PNP POWER TRANSISTORS -30 - -80 VOLTS -4 AMP, 30 WATTS COMPLEMENTARY TO THE D44C SERIES The General Electric D45C is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


    OCR Scan
    TQ-220AB 300ms D45c3 TRANSISTOR D45CZ D45C1 D45C3 D45C2 D45C4 D43C1 D44C D45C D45C10 PDF

    Untitled

    Abstract: No abstract text available
    Text: D45C Series File N um ber 2352 Silicon P-N-P Transistors Complementary to the D44C Series G en eral-P u rp o se T yp es fo r M e d iu m -P o w e r S w itchin g and A m p lifie r A p p licatio n s F e atu re s: • Very lo w c o lle c to r s a tu ra tio n voltage


    OCR Scan
    PDF

    B0415

    Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
    Text: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B


    OCR Scan
    BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 PDF

    d45c6 transistor

    Abstract: GE D45C2 d44c3 GE D45C5 transistor D45C5 D45C2 ge d45c8 D45C9 D45C4 08/bup 3110 transistor
    Text: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES GE Type NPN PNP D44C1 - - D45C1 D 44C 2 Pt T c = 25°C Max. W 311.0 30.0 V CEO Min. (V ) 30 - 30 h FE! 200 m A •c Cont. (A) @ IV, ¿.0 25 - 25 _ -¿.0 M in. M ax. hFE @ 1 V , 1A 30 4 .0 40 120 71)


    OCR Scan
    200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 d45c6 transistor GE D45C2 GE D45C5 transistor D45C5 ge d45c8 D45C9 08/bup 3110 transistor PDF

    d44c3

    Abstract: GE D44C9 D44C6 D44C5 D45C4 e 229 IC-229 D44C1 D44C2 D44C4
    Text: SILICON POWER TRANSISTORS 229 COMPLEMENTARY - 4 AMPERES G E Type N PN PN P D44C1 - - D45C1 D44C3 - 311.0 30.0 V C EO Min. V 30 - 30 •c Cont. (A ) @ IV , ¿.0 -¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 25 _ 30 4.0 40 120 71) D45C2 30.0 -30


    OCR Scan
    200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 GE D44C9 D44C6 e 229 IC-229 PDF

    TIP290

    Abstract: tip320 mje12007 D44C5 TIP62B TIP62 motorola tip29 d44c3 tip300 TIP29
    Text: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package S TY LE 1: PIN 1. CASE 221A-02 PLASTIC 2. 3. 4. BASE C O LLEC TO R E M ITTER C O LLEC TO R R esistive Sw itching lcCont V cE O (su s) Am ps Max Volts Min 0.5 1 2.5 3 3 NPN PNP Max Max <T PD (Case)


    OCR Scan
    O-220AB 21A-02 TIP62 TIP62A TIP62B TIP62C TIP29 TIP30 TIP29A TIP30A TIP290 tip320 mje12007 D44C5 motorola tip29 d44c3 tip300 PDF

    044H8

    Abstract: D44C5 D43C8 D44C6
    Text: , THOflSON/ D I S T R I B U T O R SflE D TCSK Bipolar Power Transistors General Purpose Continued v C E <sat)-V h FE T y p e N o. v CEO<s u s > v C E S (s u s ) V V Pt D 4 3 C FAM L Y ( p - n - p ) D43C1 D43C 2 D43C 3 D43C 4 D43C 5 D43C 6 D43C 7 D 43C 8


    OCR Scan
    D43C1 D43C2 D43C3 D43C4 D43C5 D43C6 O-202 D43C7 D43C8 D43C9 044H8 D44C5 D44C6 PDF

    D45C5

    Abstract: D45C11 D45C2 D45C6 D45C1 D45C9 D45C4 d45c6 transistor D45C3 D45c3 TRANSISTOR
    Text: Silicon Power Pac ELECTRONIC INACTIO N- smmomm Transistors “ Color Molded” The General Electric D45C is a green, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


    OCR Scan
    O-220 D45C5 D45C11 D45C2 D45C6 D45C1 D45C9 D45C4 d45c6 transistor D45C3 D45c3 TRANSISTOR PDF

    bd 241a transistor

    Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
    Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A


    OCR Scan
    T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11 PDF

    D44C5

    Abstract: ge d45c8 GE D44C9 D44C6 D44C3 TL3019 D44* general electric npn to-220 D44C4 d44c9 D44* npn
    Text: S IL IC O N POWER T R A N S IS T O R S COMPLEMENTARY - 4 AMPERES G E Type NPN PNP D44C1 - - D44C3 311.0 V CEO Min. V 30 •c Cont. (A) @ IV , ¿.0 Min. h FE! 200mA hF E @ 1V, 1A Max. Min. 25 - 10 10 30.0 - 30 -¿.0 25 _ 30.0 30 4.0 40 120 71) D45C2 30.0


    OCR Scan
    200mA D44C1 D45C1 D44C2 D45C2 D44C3 D45C3 D44C4 D45C4 D44C5 ge d45c8 GE D44C9 D44C6 TL3019 D44* general electric npn to-220 d44c9 D44* npn PDF

    JE230

    Abstract: JE370
    Text: NATL SEI1IC0ND {DISCRETE} NATL SEMICOND, DE tSDllBD □□3S4bO 7 28C 3 5 4 6 0 (D ISCRETE 7 p g; o< « HI -s U< IU JCs : in to »-‘ do in in in in »- • r-' O T-’ o O in in in in *- I Wo t-* o o o in o in r i *-* CV T-’ 03 > i S-« r- ff> c*j O


    OCR Scan
    2N5193 2N5194 2N5195 2N6107 2N6109 2N6110 O-126 OE252 MJE253 MJE254 JE230 JE370 PDF

    45C8

    Abstract: n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224
    Text: Power Transistors • D EV IC E ■c Max v CEO Max PO LA RITY A V - hFE M in/M ax ff \ç v CE(sat Max Cd \q A V A »T Min pD(Max) T C =25°C MHz W PACK­ AGE 0.8 15 15 25 117 115 10 10 TO-66 TO-3 TO-3 TO-39 TO-39 5.0 5.0 5.0 5.0 1.0 4.0 4.0 4.0


    OCR Scan
    2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 45C8 n5880 TIP 2n3055 BD221 d44c3 PNP 2SD triac 206 N6306 2N648B BD224 PDF

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


    OCR Scan
    2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224 PDF