BD240B Search Results

BD240

Abstract: BD240A BD240B BD240C BD241 power semiconductor 1973
Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK ● JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW ● 30 W at 25°C Case Temperature

transistor BD 246

Abstract: TIP 32 transistor transistor TIP 32 bd 244 TIP 31 Transistor TIP 29 transistor transistor BD245 BD240 BD240A BD240B
Contextual Info: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm

bd639

Abstract: bd640 BF467 B0239C B0544 bd639 npn B0250C BD546D BD243 b0546
Contextual Info: Plastic Power Transistors 1? 2-6A Up to 65W oc Device Type B0239 BD239A B D 239B B D 239C BD240 BD240A BD240B BD240C BD241 BD241A B 0241 B BD241C BD242 BD242A BD242B BD242C BD243 BD243A BD243B BD243C BD244 BD244A BD244B B D 244C > o Ul o > > 'c u V V V A Ul

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C TO-220 Plastic Package BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS BD240, 240A, 240B, 240C PNP PLASTIC POWER TRANSISTORS

BD 239A

Contextual Info: N AUER PHILIPS/DISCRETE . 11 b b S E ^ l D0n3flT b • ESE D BD240; BD240A BD240B; BD 2 4 0 C T - 3 3 - 7 SILIC O N EPITAXIAL B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television*

BD240

Abstract: BD240A BD240B BD240C BD241
Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available

Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

B0415

Abstract: BD416 BD417 BD415 d44c3 b0416 b0636 BD303 B0536 BD239
Contextual Info: Power Transistors MAXIMUM RATINGS VCEO IC Pd mW (V) (A) H FE POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A BD240B N N N P P P TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 30 2 2 2 2 2 2 45 60 80 45 60 80 15 15 15 15 15 15 BD241 BD241A BD241B

TIP 29 transistor

Abstract: TIP 31 Transistor TIP 32 transistor transistor TIP 32 transistor TIP 31 tip 31 power transistor tip 40 power transistor TIP 40 TRANSISTOR transistor tip 125 TIP 36 transistor
Contextual Info: BD240, BD240A, BD240B, BD240C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD239A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current Min f-j- of 3 MHz at 10 V , 200 mA mechanical data All d im en sion s a re in mm

D44C4

Abstract: D45C4 D44C6 D44C5
Contextual Info: Power Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY CASE BD239 BD239A BD239B BD240 BD240A N N N P P BD240B BD241 BD241A BD241B BD242 H te VcEOoi Ic V Ceo W) (A) (V) TO-220 TO-220 TO-220 TO-220 TO-220 30 30 30 30 30 2 2 2 2 2 45 60 80 45 60 15 15 15 15

BD240

Abstract: BD240C BD240A BD240B
Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector-E m itter Voltage : BD240 :BD240A :BD240B :BD240C C ollector Em itter Voltage : BD240

B0240A

Contextual Info: BD240, BD240A, BD240B, BD240C File Number 670 Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Speed-Switching Applications Features: • 30 W at 25°C case temperature ■ 4-A rated collector current ■ Min. f j of 3 MHz at 10 V, 200 mA

BD240

Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-220 • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage : BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage : BD240

Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector-E m itter V oltage : BD240 :BD240A :BD240B :BD240C C ollector Em itter V oltage : BD240

239a

Abstract: 240b b0239c BD239 BD239A BD239B BD239C BD240 BD240A BD240B
Contextual Info: |j^ BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A 8 C D E F G H J K L M N MIN

d 417 transistor

Abstract: 417 TRANSISTOR 8D239 80239 80239c 80240 BD239 BD239A BD239B BD240
Contextual Info: 01 3875081 G E SOLID STATE Pro Electron Pow er Transistors D E • 3 fl"? S D fl i 01E 17527 D 0 LI ji 7 5 dï 7- / BD240, BD240A, BD240B, BD240C File Number 670 Epitaxial-Base Silicon P-N-P

bd240c

Abstract: BD240 bd240B
Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage: BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage: BD240

BD240C

Abstract: BD239 BD239A BD239B BD239C BD240 BD240A BD240B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239, 239A, 239B, 239C NPN PLASTIC POWER TRANSISTORS

Contextual Info: n BD239, BD239A, BD239B, BD239C BD240, BD240A, BD240B, BD240C BD239,239A, 239B, 239C BD240,240A, 240B, 240C NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX

Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD241 Series TO-220 PACKAGE TOP VIEW 30 W at 25°C Case Temperature 2 A Continuous Collector Current 4 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector-Emitter Voltage : BD240 :BD240A :BD240B :BD240C Collector Emitter Voltage : BD240

BD240

Abstract: BD240A BD240B BD240C BD241
Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD241 Series ● 30 W at 25°C Case Temperature ● 2 A Continuous Collector Current B 1 ● 4 A Peak Collector Current C 2 ● Customer-Specified Selections Available

B0239B

Abstract: bd240
Contextual Info: HA RR IS S E M I C O N D SE CT OR BD240, BD240A, BD240B, BD240C SbE ]> • Fite Number 670 4 3 G 2 27 1 GG4Gb5fl EUE H I H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ¡er and High-Speed-Switching Applications Features: ■ 30 W at 25°C case temperature

Contextual Info: BD240, BD240A, BD240B, BD240C PNP SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK • JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD241 Series T0-220 PACKAGE TOP VIEW • 30 W at 25°C Case Temperature