Untitled
Abstract: No abstract text available
Text: DEM-DAI3793A/3794A EVM User's Guide July 2007 AIP Consumer Audio—TI Japan SBAU127 2 SBAU127 – July 2007 Submit Documentation Feedback Contents Preface . 9
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DEM-DAI3793A/3794A
SBAU127
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Transistor C1173
Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
Text: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG
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inR214
R0402
R0603
3314J
Transistor C1173
L1210
tyco resolver
C1173 transistor
transistor c929
Transistor C1173 1A
Tx C1173 transistor
6ED100HP1-FA
C1211 transistor
C1161
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d2s diode
Abstract: d2s 28 diode BU2507DX
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2507DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
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BU2507DX
d2s diode
d2s 28 diode
BU2507DX
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI ELEK {LINEAR} b2 D EI bSM'ïôSb DGG4DCI4 S | •jz^-25’ INDUSTRY STANDARD X MITSUBISHI LIN^ R M2001 SEMICONDUCTORS 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION The M2001 7-channel sink driver consists of 14 NPN transistors
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M2001
500mA
M2001
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
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BU2522AF
1E-06
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification BUK542-1OOA/B PowerMOS transistor J - o g ic J te v e lF E T ^ ^ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK542-1OOA/B
BUK542
-100A
-100B
PINNING-SOT186
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BUK638-500B
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE I> • bbS3T31 0030675 Philips semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery reverse diode, particularly suitable
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BUK638-500B
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BUK436-100A
Abstract: BUK436-100B
Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK436-100A/B
-100A
-100B
00304b4
BUK436-1OOA/B
BUK436-100A
BUK436-100B
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B 647 AC transistor
Abstract: uav specification transistor 2TH
Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK452-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK452-60A/B
BUK472-60A/B
BUK472
T186A
B 647 AC transistor
uav specification
transistor 2TH
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transistor 7g
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION PHP10N10E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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PHP10N10E
T0220AB
transistor 7g
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Untitled
Abstract: No abstract text available
Text: - 7^ - 3 Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 Replaces BUK541-100A/B N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK571-100A/B
711002b
BUK541-100A/B
BUK571
-100A
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BUK442-100A
Abstract: BUK442-100B
Text: N AMER PHILIPS/DISCRETE □TE D • bbS3T31 0D3G510 273 * A P X Product Specification P hilip s S e m icon ducto rs BU K442-1OOA/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode f ield-effect power transistor in a plastic full-pack envelope.
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K442-1OOA/B
EUK442
-100A
OT186
BUK442-100A
BUK442-100B
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Untitled
Abstract: No abstract text available
Text: Preliminary Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device Is intended for use in automotive and general purpose
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BUK556-60H
T0220AB
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diode d2s
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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PHP10N10E
T0220AB
diode d2s
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Untitled
Abstract: No abstract text available
Text: T Philips Components Data sheet status Product specification date of issue M a rch 1991 3 ' ? - // B U K 4 2 6 - 10 0 0 A /B PowerMOS transistor PHI L IP S I N T E R N A T I O N A L SbE J> m 7 1 1 0 0 2 b 0 0 4 4 1 3 5 2Ô1 H P H I N l_ i
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BUK426
T-39-11
711062b
BUK426-1OOOA/B
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c17f
Abstract: IE-02 BUK436-100A BUK436-100B
Text: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in
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7110fl2b
c17fl
BUK436-100A/B
BUK436
-100A
-100B
/C-\15
c17f
IE-02
BUK436-100A
BUK436-100B
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atheros
Abstract: transistor wes BUK436-100B c17f BUK436-100A
Text: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in
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7110fl2b
c17fl
BUK436-100A/B
BUK436
-100A
-100B
711002b
atheros
transistor wes
BUK436-100B
c17f
BUK436-100A
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T3D DIODE
Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
Text: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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0D307flS
BUK552-100A/B
T0220AB
BUK552
-100A
-100B
T3D DIODE
T3D 45 diode
T3D 55 diode
T3D 18 DIODE
Diode T3D 03
Diode T3D 35
dt t3d 13
BUK552-100A
BUK552-100B
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BUK444
Abstract: 3BS transistor BUK444-800A BUK444-800B buk444 800
Text: N AMER PHILIPS/DISCRETE blE D • ^53^31 0D305^ Philips Semiconductors Product Specification PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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0D305LI5
BUK444-800A/B
OT186
BUK444
3BS transistor
BUK444-800A
BUK444-800B
buk444 800
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TRANSISTOR BC 208
Abstract: transistor BC 568 AC/DC tig smps tig welding tig welding 100-P BUK442 BUK442-100A BUK442-100B
Text: PHILIPS INTERNATIONAL b5E D • 711DflEb aDb3T4b 223 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK442-100A/B
PINNING-SOT186
TRANSISTOR BC 208
transistor BC 568
AC/DC tig
smps tig welding
tig welding
100-P
BUK442
BUK442-100A
BUK442-100B
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BUK581-100A
Abstract: DD3003
Text: tiTE D N AMER P H I L I P S / D I S C R E T E • b bS BT a i □03Dfl3tj 25 2 ■ APX Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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0030fl3t,
BUK58Ã
-100A
OT223
aD30a41
BUK581
OT223.
BUK581-100A
DD3003
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transistor BC 568
Abstract: dgb3t 100-P BUK442 BUK442-100A BUK442-100B smps tig welding transistor BC 209
Text: PHILIPS INTERNATIONAL b5E D • 711DflEb a D b 3 T 4 b Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK442-100A/B
PINNING-SOT186
-ID/100
transistor BC 568
dgb3t
100-P
BUK442
BUK442-100A
BUK442-100B
smps tig welding
transistor BC 209
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BUK452-60A
Abstract: BUK452-60B T0220AB
Text: PHILIPS INTERNATIONAL L.5E D B 711DfiSb D0fc.4D5b 114 B I P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK452-60A/B
T0220AB
BUK452
-ID/100
BUK452-60A
BUK452-60B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM50E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE ! Q M 50E2Y/E3Y-H • lc • • • • Collector current. 50A VCEX Collector-emitter voltage.600V hFE DC current gain. 75
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QM50E2Y/E3Y-H
50E2Y/E3Y-H
E80276
E80271
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